onsemi-FDMC8676
| Part # | onsemi-FDMC8676 |
Download  | onsemi-FDMC8676 |
December 2007
FDMC8676
tm
N-Channel PowerTrench
®
MOSFET
30V, 18A, 5.9m
Ω
Features
General Description
Max r
DS(on)
= 5.9m
Ω
at V
GS
= 10V, I
D
= 14.7A
Max r
DS(on)
= 9.3m
Ω
at V
GS
= 4.5V, I
D
= 11.5A
Low Profile – 1mm max in Power 33
RoHS Compliant
This device has been designed specifically to improve the
efficiency of DC/DC converters. Using new techniques in
MOSFET construction, the various components of gate charge
and capacitance have been optimized to reduce switching
losses. Low gate resistance and very low Miller charge enable
excellent performance with both adaptive and fixed dead time
gate drive circuits. Very low r
DS(on)
has been maintained to
provide an extremely versatile device.
Applications
High efficiency DC-DC converter
Notebook DC-DC conversion
Multi purpose point of load
Top
Bottom
Pin 1
S
4
3
2
1
G
S
S
S
D
D
D
D
5
6
7
8
S
S
G
D
D
D
D
Power 33
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
V
V
±20
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
T
C
= 25°C
T
C
= 25°C
T
A
= 25°C
18
66
I
D
A
(Note 1a)
16
60
-Pulsed
Power Dissipation
T
C
= 25°C
T
A
= 25°C
41
P
D
W
Power Dissipation
(Note 1a)
(Note 3)
2.3
E
AS
Single Pulse Avalanche Energy
216
mJ
°C
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3
°C/W
(Note 1a)
53
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12mm
Quantity
FDMC8676
FDMC8676
Power 33
3000units
1
©2007 Fairchild Semiconductor Corporation
FDMC8676 Rev.
C
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
µ
A, V
GS
= 0V
I
D
= 250
µ
A, referenced to 25°C
V
DS
= 24V,
30
V
∆
BV
DSS
∆
T
J
Breakdown Voltage
T
e
mperature
Coefficient
32
mV/°C
1
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µ
A
V
GS
= 0V
T
J
= 125°C
100
±100
V
GS
= ±20V, V
DS
= 0V
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
µ
A
1.0
1.8
-5
3.0
V
∆
V
GS(th)
∆
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
µ
A, referenced to 25°C
mV/°C
V
GS
= 10V,
I
D
= 14.7A
4.7
7.1
6.8
56
5.9
9.3
9.1
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 4.5V,
I
D
= 11.5A
V
GS
=10V, I
D
= 14.7A, T
J
= 125°C
V
DD
= 5
V
,
I
D
= 14.7A
m
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
1455
760
105
0.8
1935
1010
155
pF
pF
pF
Ω
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
9
3
19
10
36
10
30
14
ns
ns
V
DD
= 15V, I
D
= 14.7A,
V
GS
= 10V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
22
2
ns
ns
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0V to 10V
21
10
4
nC
nC
nC
nC
Q
g
V
GS
= 0V to 4.5V
V
DD
= 15
V
,
I
D
= 14.7A
Q
gs
Q
gd
3
Drain-Source Diode Characteristics
V
GS
= 0V, I
S
= 14.7A
V
GS
= 0V, I
S
= 1.7A
(Note 2)
(Note 2)
0.8
0.7
33
1.3
1.2
53
V
SD
Source to Drain Diode
Forward Voltage
V
t
rr
Reverse Recovery Time
ns
I
F
= 14.7A, di/dt = 100A/
µ
s
Q
rr
Reverse Recovery Charge
17
31
nC
NOTES:
2
1. R
is determined with the device mounted on a 1in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
2
b. 125°C/W
when mounted on
minimum pad of 2 oz copper
a
a. 53°C/W when mounted on
a 1 in
pad of
2 oz
copper
2. Pulse Test: Pulse Width < 30
0
µ
s, Duty cycle < 2.0%.
o
3. Starting
T =
25 C; N-ch: L =3mH, I
= 12A, V
= 30V, V
= 10V
J
AS
DD
GS
©2007 Fairchild Semiconductor Corporation
FDMC8676 Rev.
C
2
Typical Characteristics
T
J
= 25°C unless otherwise noted
60
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
GS
= 10V
V
GS
= 6V
V
GS
= 3.5V
50
40
30
20
10
0
V
GS
= 3.5V
PULSE DURATION = 300
µ
s
DUTY CYCLE = 2%MAX
V
GS
= 4.5V
V
GS
= 4.5V
V
GS
= 3V
V
GS
= 6V
PULSE DURATION = 300
µ
s
DUTY CYCLE = 2%MAX
V
GS
= 10V
0.0
0.5
1.0
1.5
0
10
20
30
40
50
60
10
1.2
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT(A)
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
25
1.6
I
D
= 14.7A
GS
= 10V
PULSE DURATION = 300
µ
s
DUTY CYCLE = 2%MAX
I
D
= 14.7A
V
20
15
10
5
1.4
1.2
1.0
0.8
0.6
T
J
= 125
o
C
T
J
= 25
o
C
0
2
4
6
8
-75 -50 -25
0
25 50 75
100 125 150
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
60
80
PULSE DURATION = 300
µ
s
V
GS
= 0V
DUTY CYCLE = 2%MAX
50
10
1
V
DS
= 5V
40
T
J
= 150
o
C
T
J
= 150
o
C
T
J
= 25
o
C
30
T
J
= 25
o
C
T
J
= -55
o
C
0.1
20
10
0
T
J
= -55
o
C
0.01
0.001
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation
FDMC8676 Rev.
C
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
10
60000
1000
I
D
= 14.7A
V
DD
= 10V
C
iss
8
6
4
2
0
V
DD
= 15V
C
oss
V
DD
= 20V
100
C
rss
f = 1MHz
= 0V
V
GS
10
0.1
30
1
10
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE(nC)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
100
10
20
10
1ms
T
J
= 25
o
C
10ms
THIS AREA IS
1
LIMITED BY r
DS(on)
100ms
1s
T
J
= 125
o
C
SINGLE PULSE
T
J
= MAX RATED
0.1
10s
DC
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
0.01
1
0.01
0.01
0.1
1
10
100
0.1
1
10
100 400
t
AV
, TIME IN AVALANCHE(ms)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
F i g u r e 9 .
U n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Forwar
d
B
ia
s
S
afe
Operating Area
2000
1000
100
10
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
1
0.5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (sec)
1
100
10
1000
Figure 11.
Single Pulse
Maximum Power
Dissipation
©2007 Fairchild Semiconductor Corporation
FDMC8676 Rev.
C
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
1
0.01
t
2
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
1
2
R
θ
JA
= 125
o
C/W
PEAK T
= P
J
x Z
x R
+ T
DM
θ
JA
θ
JA
A
0.001
0.0005
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 12.
Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDMC8676 Rev.
C
5
Dimensional Outline and Pad Layout
©2007 Fairchild Semiconductor Corporation
FDMC8676 Rev.
C
6
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx
®
FPS™
PDP-SPM™
SyncFET™
Build it Now™
CorePLUS™
CROSSVOLT
™
CTL™
FRFET
®
Power220
®
®
Global Power Resource
SM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo
™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Power247
®
The Power Franchise
®
POWEREDGE
®
Power-SPM™
PowerTrench
®
Programmable Active Droop™
QFET
®
Current Transfer Logic™
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC
®
EcoSPARK
®
EZSWITCH™ *
™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
®
Fairchild
®
Fairchild Semiconductor
®
FACT Quiet Series™
FACT
®
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC
®
Ultra FRFET™
UniFET™
VCX™
FAST
®
FastvCore™
OPTOPLANAR
®
®
FlashWriter
®
*
tm
* EZSWITCH™ and FlashWriter
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life
support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I32
7
©2007 Fairchild Semiconductor Corporation
FDMC8676 Rev.
C
