onsemi-FDMC8878
| Part # | onsemi-FDMC8878 |
Download  | onsemi-FDMC8878 |
November 2013
FDMC8878
N-Channel Power Trench
®
MOSFET
ꢀ
30V, 16.5A, 14m
ꢁ
Features
General Description
Max r
DS(on)
= 14m
ꢁ
at V
GS
= 10V, I
D
= 9.6A
This N-Channel MOSFET is
Fairchild Semiconductor‘s
process. It has been optimized for power management
applications.
a
rugged gate version
of
advanced
Power
Trench
Max r
DS(on)
= 17m
ꢁ
at V
GS
= 4.5V, I
D
= 8.7A
Low Profile – 0.8 mm max in
RoHS Compliant
MLP 3.3
X
3.3
Application
DC – DC Conversion
Bottom
D D
Top
D
D
5
8
7
6
G
S
D
D
D
D
5
6
7
8
4
3
2
1
S
S
G S
S
Pin 1
S
1
2
3
4
MLP 3.3×3.3
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
30
20
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Power Dissipation
T
C
= 25°C
T
C
= 25°C
T
A
= 25°C
16.5
38
9.6
60
31
I
D
A
(Note 1a)
(Note 1a)
T
C
= 25°C
T
A
= 25°C
P
D
W
Power Dissipation
2.1
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°
C
Thermal Characteristics
R
ꢂ
JC
R
ꢂ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
4
°C/W
(Note 1a)
60
Package Marking and Ordering Information
Device Marking
FDMC8878
Device
FDMC8878
Package
MLP 3.3
X
3.3
Reel Size
13
”
Tape Width
12
m
m
Quantity
3
000 units
1
©20
1
2
Fairchild Semiconductor Corporation
FDMC8878 Rev.
D
5
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
ꢃ
A, V
GS
= 0V
I
D
= 250
ꢃ
A, referenced to 25°C
V
DS
= 24V,
30
V
ꢄ
BV
DSS
ꢀꢀꢀꢄ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
20
mV/°
C
1
100
100
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ꢃ
A
V
GS
= 0V
T
J
= 125°C
V
GS
20V, V
DS
= 0V
=
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
ꢃ
A
1
1.7
3
V
ꢀꢄ
V
GS(th)
ꢀꢀꢀꢄ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
ꢃ
A, referenced to 25°C
-5.7
mV/°C
V
V
GS
= 10V,
I
D
= 9.6A
GS
= 4.5V,
I
D
= 8.7A
9.6
12.1
13.5
35
14.0
17.0
20.0
r
DS(on)
Drain to Source On Resistance
m
ꢁ
V
GS
= 10
V
,
I
D
= 9.6A , T
J
= 125°C
V
DS
= 5V,
I
D
= 9.6A
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
1000
183
118
1.1
1230
255
180
pF
pF
pF
ꢁ
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
8
4
20
3
18
2.8
3.9
16
10
36
10
26
ns
ns
ns
V
DD
= 15
V
,
I
D
= 9.6A
V
GS
= 10V, R
GEN
= 6
ꢁ
ns
Q
g(TOT)
Q
gs
Q
gd
T
o
tal Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
nC
nC
nC
V
GS
= 10V , V
DD
= 15V ,
I
D
= 9.6A
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode
Forward Voltage
V
GS
= 0V, I
S
= 9.6A
(Note 2)
0.8
23
14
1.2
35
21
V
ns
nC
t
rr
Reverse Recovery Time
I
F
= 9.6A, di/dt = 100A/
ꢃ
s
Q
rr
Reverse Recovery Charge
Notes:
2
1:
R
is determined with the device mounted on a 1in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while
R
is determined by
ꢂ
CA
ꢂ
JA
ꢂ
JC
the user’s board design.
b. 135°C/W when mounted on
minimum pad of 2 oz copper
a
a. 60°C/W when mounted
on
2
a 1 in
pad of
2 oz
copper
2:
Pulse
T
e
st: Pulse Width < 30
0
ꢃ
s, Duty cycle < 2.0%.
©20
1
2
Fairchild Semiconductor Corporation
2
FDMC8878 Rev.
D
5
Typical Characteristics
T
J
= 25°C unless otherwise noted
2.5
2.0
1.5
1.0
0.5
60
PULSE DURATION = 80
ꢃ
s
DUTY CYCLE = 0.5%MAX
V
= 10V
50
40
30
20
10
0
GS
V
= 3.5V
GS
V
GS
= 3V
V
GS
= 4V
V
GS
= 4.5V
V
= 4.5V
= 4V
GS
V
GS
V
GS
= 3.5V
V
= 3V
GS
V
GS
= 10V
PULSE DURATION = 80
ꢃ
s
DUTY CYCLE = 0.5%MAX
0
10
20
30
40
50
60
0
1
2
3
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT(A)
D
Figure 1.
On-Region Characteristics
Figur
e
2
. No
r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
30
PULSE DURATION = 80
ꢃ
s
I
V
= 9.6A
D
I
D
= 9.6A
DUTY CYCLE = 0.5%MAX
= 10V
GS
25
20
15
10
5
T
J
= 125
o
C
T
J
= 25
o
C
7
-75 -50 -25
0
25 50 75
100 125 150
3
4
5
6
8
9
10
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
60
100
10
PULSE DURATION = 80
ꢃ
s
V
GS
= 0V
DUTY CYCLE = 0.5%MAX
50
40
30
20
10
0
V
= 5V
DD
1
T
J
= 25
o
C
T =
150
o
C
J
T
= 25
o
C
J
0.1
T
J
= -55
o
C
T
J
= -55
o
C
T =
150
o
C
J
0.01
0.001
0
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
3
©20
1
2
Fairchild Semiconductor Corporation
FDMC8878 Rev.
D
5
Typical Characteristics
T
J
= 25°C unless otherwise noted
10
3000
1000
I
= 9.6A
D
V
= 15V
DD
C
iss
8
6
4
2
0
V
DD
= 10V
C
oss
V
DD
= 20V
C
rss
f = 1MHz
= 0V
100
50
V
GS
30
0.1
1
10
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE(nC)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. Ca
p a c i t a n c e v s D r a i n
to Source Voltage
12
10
8
20
10
V
GS
= 10V
T
J
= 25
o
C
6
V
GS
= 4.5V
T
J
= 125
o
C
4
2
R
ꢂ
JA
= 60
o
C/W
50
1
0
80
0.01
0.1
1
10
25
75
100
125
150
T
A
, AMBIENT TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE(ms)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs
Ambient Temperature
300
80
o
T
= 25
C
V
GS
= 10V
A
100us
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
100
10
10
1
o
1ms
150
–
T
10ms
A
———————-
I = I
25
125
100ms
1s
10s
DC
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
0.1
SINGLE PULSE
0.01
T
= MAX RATED
J
SINGLE PULSE
T
= 25
o
C
1
A
0.5
0.001
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
10
2
10
3
0.1
1
10
80
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse
Maximum
Power Dissipation
4
©20
1
2
Fairchild Semiconductor Corporation
FDMC8878 Rev.
D
5
Typical Characteristics
T
J
= 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.1
P
0.01
DM
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t
/t
1
2
SINGLE PULSE
0.003
PEAK T
= P
x Z
x R
+ T
J
DM
ꢂ
JA
ꢂ
JA
A
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 13.
Transient Thermal Response Curve
5
©20
1
2
Fairchild Semiconductor Corporation
FDMC8878 Rev.
D
5
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
(1.70)
3.30
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
SIDE VIEW
0.65
0.42(8X)
2X
1.95
ꢀꢁꢅꢃꢀꢁꢀꢃ
RECOMMENDED LAND PATTERN
0.10 C
0.08 C
ꢀꢁꢂꢃꢀꢁꢀꢃ
ꢀꢁꢀꢄꢃꢀꢁꢀꢄꢃ
NOTES:
C
SEATING
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO-229
PLANE
B. DIMENSIONS
ARE IN MILLIMETERS.
ꢆꢁꢆꢀꢀꢁꢀꢃ
C. DIMENSIONS
AND TOLERANCES PER
ASME Y14.5M, 2009.
2.27+0.05
(0.50)4X
PIN #1 IDENT
(0.79)
D. LAND
PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
ꢀꢁꢃꢀꢀꢁꢀꢃꢇꢊ;ꢉ
E. DRAWING
FILENAME: MKT-MLP08Srev3.
(0.35)
(1.15)
ꢆꢁꢆꢀꢀꢁꢀꢃ
R0.15
ꢄꢁꢀꢀꢀꢁꢀꢃ
ꢀꢁꢆꢀꢀꢁꢀꢃꢇꢆ;ꢉ
8
5
ꢀꢁꢆꢃꢀꢁꢀꢃꢇꢈ;ꢉ
0.65
0.10
C A B
1.95
0.05
C
BOTTOM VIEW
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Datasheet Identification
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Definition
Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I77
© Fairchild Semiconductor Corporation
