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July 2010
FDME1024NZT
Dual N-Channel PowerTrench
®
MOSFET
20 V, 3.8 A, 66 m
Ω
Features
General Description
Max r
DS(on)
= 66 m
Ω
at V
GS
= 4.5 V, I
D
= 3.4 A
Max r
DS(on)
= 86 m
Ω
at V
GS
= 2.5 V, I
D
= 2.9 A
Max r
DS(on)
= 113 m
Ω
at V
GS
= 1.8
V
,
I
D
= 2.5 A
Max r
DS(on)
= 160 m
Ω
at V
GS
= 1.5 V, I
D
= 2.1 A
This device is designed specifically as a single package solution
for dual switching requirement in cellular handset and other
ultra-portable applications. It features two independent
N-Channel MOSFETs with low on-state resistance for minimum
conduction losses.
Low profile:
0.55 mm maximum in the new package
MicroFET 1.6×1.6
Thin
The MicroFET 1.6×1.6
Thin
package offers exceptional thermal
performance for it’s physical size and is well suited to switching
and linear mode applications.
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600 V (Note 3)
RoHS Compliant
Applications
Baseband Switch
Load Switch
D2
G1
S1
D2
Pin 1
D1
S2
G2
D1
BOTTOM
TOP
MicroFET 1.6×1.6 Thin
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
20
V
V
±8
T
A
= 25 °C
(Note 1a)
3.8
I
D
A
6
1.4
Power Dissipation for Single Operation
Power Dissipation for Single Operation
T
A
= 25 °C
T
A
= 25 °C
(Note 1a)
(Note 1b)
P
D
W
0.6
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
(Note 1a)
(Note 1b)
90
°C/W
195
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7 ’’
Tape Width
8 mm
Quantity
4T
FDME1024NZT
MicroFET 1.6×1.6
Thin
5000 units
©2010 Fairchild Semiconductor Corporation
FDME1024NZT Rev.C1
1
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V
20
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25 °C
16
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 16 V, V
GS
= 0 V
V
GS
= ±8 V, V
DS
= 0 V
1
μ
A
μ
A
±10
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
0.4
0.7
-3
1.0
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25 °C
mV/°C
V
GS
= 4.5 V,
I
D
= 3.4 A
55
68
85
106
76
9
66
86
V
GS
= 2.5 V,
I
D
= 2.9 A
r
DS(on)
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 1.8 V,
I
D
= 2.5 A
113
160
112
m
Ω
V
GS
= 1.5 V,
I
D
= 2.1 A
V
GS
= 4.5
V
,
I
D
= 3.4 A, T
J
= 125 °C
V
DD
= 4.5 V,
I
D
= 3.4 A
g
FS
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
225
40
300
55
pF
pF
pF
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
25
40
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
4.5
2
10
10
27
10
4.2
ns
ns
V
DD
= 10
V
,
I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
15
1.7
3
ns
ns
Q
g
T
o
tal Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
nC
nC
nC
V
DD
= 10
V
,
I
D
= 3.4 A,
GS
= 4.5 V
Q
gs
Q
gd
0.4
0.6
V
Drain-Source Diode Characteristics
V
SD
t
rr
Source to Drain Diode
Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= 0.9 A
(Note 2)
0.7
8.5
1.4
1.2
17
10
V
ns
nC
I
F
= 3.4 A, di/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
NOTES:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
a. 90 °C/W when mounted
on
a 1 in
pad of
2 oz
copper.
b. 195 °C/W when mounted on
a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
FDME1024NZT Rev.C1
2
Typical Characteristics
T
J
= 25 °C unless otherwise noted
6
3.0
2.5
2.0
1.5
1.0
0.5
V
GS
= 4.5 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3 V
V
GS
= 2.5 V
V
GS
= 1.8 V
4
V
GS
= 1.5 V
V
GS
= 1.5 V
V
GS
= 1.8 V
V
GS
= 2.5 V
2
V
GS
= 3 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5 V
0
0.0
0.5
1.0
1.5
0
2
4
6
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
300
I
D
= 3.4 A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5 V
250
200
150
100
50
1.4
1.2
1.0
0.8
0.6
I
D
= 3.4 A
T
J
= 125
o
C
T
J
= 25
o
C
0
1.0
-75 -50 -25
0
25 50 75
100 125 150
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
6
10
PULSE DURATION = 80
μ
s
V
GS
= 0 V
DUTY CYCLE = 0.5% MAX
V
DS
= 5 V
1
0.1
T
J
= 150
o
C
4
T
J
= 25
o
C
T
J
= 150
o
C
2
T
J
= 25
o
C
T
J
= -55
o
C
0.01
T
J
= -55
o
C
0
0.0
0.001
0.5
1.0
1.5
2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
FDME1024NZT Rev.C1
3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
4.5
500
100
I
D
= 3.4 A
C
iss
V
DD
= 8 V
3.0
V
DD
= 10 V
V
DD
= 12 V
C
oss
1.5
C
rss
10
f = 1 MHz
= 0 V
V
GS
0.0
10
0
1
2
3
0.1
1
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s
D r a i n
to Source Voltage
10
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
100
μ
s
V
GS
= 0 V
1 ms
1
0.1
10 ms
THIS AREA IS
LIMITED BY r
DS(on)
T
J
= 125
o
C
100 ms
SINGLE PULSE
T
J
= MAX RATED
1 s
10 s
DC
R
θ
JA
= 195
o
C/W
T
A
= 25
o
C
T
J
= 25
o
C
0.01
0.1
1
10
50
0
3
6
9
12
15
V
DS
, DRAIN to SOURCE VOLTAGE (V)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 9.
Forward Bias Safe Operating Area
Figur
e
1
0. Gate Leakage Current vs
Gate to Source Voltage
100
SINGLE PULSE
R
θ
JA
= 195
o
C/W
T
A
= 25
o
C
10
1
0.5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
1
10
100
1000
Figure 11.
Single Pulse Maximum Power Dissipation
FDME1024NZT Rev.C1
4
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
P
DM
0.1
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t
/t
1
2
SINGLE PULSE
R
θ
JA
= 195
o
C/W
0.01
PEAK T
= P
J
x Z
x R
+ T
DM
θ
JA
θ
JA
A
0.005
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 12.
Junction-to-Ambient Transient Thermal Response Curve
FDME1024NZT Rev.C1
5
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intended to be an exhaustive list of all such trademarks.
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max
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PowerXS™
®*
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OptiHiT™
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μ
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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Full Production
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I48
FDME1024NZT Rev.C1
7
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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