onsemi-FDME820NZT
| Part # | onsemi-FDME820NZT |
Download  | onsemi-FDME820NZT |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
onsemi
andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates and/or
subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf.
onsemi
reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using
onsemi
products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by
onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hol
d
onsemi
and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDME820NZT
N-Channel PowerTrench
®
MOSFET
20 V, 9 A, 18 m
Ω
General Description
This Single N-Channel MOSFET has been designed using
ON
Semiconductor’s advanced Power Trench process to
optimize the r
DS(ON)
@ VGS = 1.8 V on special MicroFET
Features
Max r
DS(on)
= 18 m
Ω
at V
GS
= 4.5 V, I
D
= 9 A
Max r
DS(on)
= 24 m
Ω
at V
GS
= 2.5 V, I
D
= 7.5 A
Max r
DS(on)
= 32 m
Ω
at V
GS
= 1.8 V, I
D
= 7 A
leadframe.
Applications
Low profile:
0.55 mm maximum in the new package
MicroFET 1.6×1.6
Thin
Li-lon Battery Pack
Baseband Switch
Load Switch
Free from halogenated compounds and antimony oxides
HBM ESD protection level >2.5 kV (Note3)
RoHS Compliant
DC-DC Conversion
G
D
D
D
D
S
D
S
Pin 1
D
G
S
D
D
BOTTOM
TOP
MicroFET 1.6×1.6 Thin
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
20
V
V
±12
T
A
= 25 °C
(Note 1a)
9
40
I
D
A
Power Dissipation for Single Operation
Power Dissipation for Single Operation
T
A
= 25 °C
T
A
= 25 °C
(Note 1a)
(Note 1b)
2.1
P
D
W
0.7
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
70
°C/W
190
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7 ’’
Tape Width
8 mm
Quantity
8T
FDME820NZT
MicroFET 1.6×1.6
Thin
5000 units
©2012
Semiconductor Components Industries, LLC.
October-2017,
Rev.
3
Publication Order Number:
FDME820NZT/D
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V
20
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25 °C
20
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 16
V, V
GS
= 0 V
V
GS
= ±12 V, V
DS
= 0 V
1
μ
A
μ
A
±10
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
0.5
0.8
-3
1.0
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25 °C
mV/°C
V
GS
= 4.5 V,
I
D
= 9 A
14
17
26
18
24
32
V
GS
= 2.5 V,
I
D
= 7.5 A
V
GS
= 1.8 V,
I
D
= 7 A
r
DS(on)
Drain to Source On Resistance
m
Ω
V
GS
= 4.5 V,
I
D
= 9 A ,
T
J
= 125 °C
19
24
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
865
203
190
1.0
pF
pF
pF
Ω
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
9
ns
ns
5
V
DD
= 10 V, I
D
= 4 A
V
GS
= 4.5 V, R
GEN
= 2
Ω
Turn-Off Delay Time
Fall Time
19
5
ns
ns
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= 4.2 V,
I
D
= 3 A, V
GS
= 4.3 V
V
DD
= 4.2 V,
I
D
= 3 A, V
GS
= 4.5 V
8.0
8.5
1.4
3.2
nC
nC
nC
nC
Q
g
Q
gs
Q
gd
V
DD
= 10 V,
I
D
= 9 A
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 1.6 A
(Note 2)
(Note 2)
0.7
0.8
18
4
1.2
1.2
V
V
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 9 A
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
I
F
= 9 A, di/dt = 100 A/us
Q
rr
Notes:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5
in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
a. 70 °C/W when mounted
on
a 1 in
pad of
2 oz
copper.
b. 190 °C/W when mounted on
a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
2
Typical Characteristics
T
J
= 25 °C unless otherwise noted
40
5
4
3
2
1
0
V
GS
= 4.5 V
PULSE DURATION = 80
μ
s
V
GS
= 1.5 V
V
GS
= 3 V
V
GS
= 2.5 V
DUTY CYCLE = 0.5% MAX
30
V
GS
= 1.8 V
V
GS
= 2 V
V
GS
= 1.8 V
20
V
GS
= 2.5 V
V
GS
= 2 V
V
GS
= 3 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
10
V
GS
= 4.5 V
V
GS
= 1.5 V
2.0
0
0
10
20
30
40
0
0.5
1.0
1.5
2.5
I
D
,
DRAIN CURRENT (A)
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
On Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
80
I
D
= 9 A
GS
= 4.5 V
PULSE DURATION = 80
μ
s
V
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
60
40
20
0
I
D
= 9 A
T
J
= 125
o
C
T
J
= 25
o
C
-75 -50 -25
0
25 50 75
100 125 150
0.9
1.8
2.7
3.6
4.5
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
40
1000
V
GS
= 0 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
100
10
V
DS
= 5 V
30
20
10
0
T
J
= 150
o
C
T
J
= 25
o
C
1
T
J
= 150
o
C
0.1
T
J
= 25
o
C
T
J
= -55
o
C
0.01
0.001
T
J
= -55
o
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
4.5
2000
1000
I
D
= 9 A
3.6
V
DD
= 8 V
C
iss
2.7
V
DD
= 10 V
1.8
V
DD
= 12 V
C
oss
0.9
0.0
f = 1 MHz
GS
= 0 V
C
rss
V
100
0
3
6
9
12
0.1
1
10
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
10
-10
20
V
GS
= 0 V
10
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 100
o
C
T
J
= 25
o
C
T
J
= 125
o
C
1
0.001
0.01
0.1
1
10
100
0
3
6
9
12
15
18
t
AV
, TIME IN AVALANCHE (ms)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Gat
e
L
eakag
e
C
urren
t
v
s
G
ate
to Source Voltage
100
10
1000
SINGLE PULSE
R
θ
JA
= 190
o
C/W
100
10
1
100 us
T
A
= 25
o
C
1
1 ms
THIS AREA IS
LIMITED BY r
10 ms
DS(on)
SINGLE PULSE
100 ms
0.1
T
J
= MAX RATED
R
θ
JA
= 190
o
C/W
A
= 25
o
C
1 s
10 s
DC
T
0.01
0.1
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
1
10
0.01
0.1
1
10
100
100 1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse
Maximum
Power Dissipation
4
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
R
θ
JA
= 190
o
C/W
1
2
PEAK T
= P
J
x Z
x R
+ T
DM
θ
JA
θ
JA
A
0.001
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 13.
Junction-to-Ambient Transient Thermal Response Curve
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800
−
282
−
9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81
−
3
−
5817
−
1050
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
©
Semiconductor Components Industries, LLC
❖
