onsemi-FDMS0310AS
| Part # | onsemi-FDMS0310AS |
Download  | onsemi-FDMS0310AS |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most
current and up-to-date ordering information can be found at
www.onsemi.com
. Please
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
August 2014
FDMS0310AS
N-Channel PowerTrench
®
SyncFET
TM
30 V, 22 A, 4.3 m
Ω
Features
General Description
The FDMS0310AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance.This
device has the added benefit of an efficient monolithic Schottky
body diode.
Max r
DS(on)
= 4.3 m
Ω
at V
GS
= 10 V, I
D
= 19 A
Max r
DS(on)
= 5.2 m
Ω
at V
GS
= 4.5 V, I
D
= 17 A
Advanced package and Silicon combination for low r
DS(on)
and high efficiency
SyncFET
TM
Schottky Body Diode
MSL1 robust package design
100% UIL tested
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
T
e
lecom secondary side rectification
RoHS Compliant
Bottom
Top
Pin 1
D
D
D
G
5
6
7
8
4
3
2
1
S
S
S
G
S
S
S
D
D
D
D
D
Power 56
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
V
V
(Note 4)
±20
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
T
C
= 25°C
C
= 25°C
22
T
80
I
D
A
T
A
= 25°C
(Note 1a)
(Note 3)
(Note 1a)
19
100
-Pulsed
E
AS
Single Pulse Avalanche Energy
Power Dissipation
33
mJ
W
T
C
= 25°C
T
A
= 25°C
41
P
D
Power Dissipation
2.5
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3.0
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS0310AS
FDMS0310AS
Power 56
3000 units
©2010 Fairchild Semiconductor Corporation
FDMS0310AS Rev.C2
1
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 1 mA, V
GS
= 0 V
30
33
V
V
Drain to Source Breakdown Voltage
Transient
BV
DSST
V
GS
= 0 V, Transient = 100 ns
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 10 mA, referenced to 25°C
23
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
500
100
μ
A
Gate to Source Leakage Current, Forward
V
GS
= 20 V, V
DS
= 0 V
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 1 mA
D
= 10 mA, referenced to 25°C
GS
= 10
V
,
I
D
= 19 A
1.2
1.5
-4
3.0
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
mV/°C
V
3.6
4.5
4.8
103
4.3
5.2
6.0
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 4.5 V, I
D
= 17 A
m
Ω
V
GS
= 10
V
,
I
D
= 19 A, T
J
= 125°C
V
DS
= 5
V
,
I
D
= 19 A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
1715
655
75
2280
870
110
2.5
pF
pF
pF
Ω
V
DS
= 15 V, V
GS
= 0 V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.7
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
9.0
3.9
25
18
10
40
10
37
19
ns
ns
V
DD
= 15 V, I
D
= 19 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
ns
3.2
27
ns
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
V
GS
= 0 V to 4.5 V
nC
nC
nC
nC
Q
g
13
V
DD
= 15
V
,
D
= 19 A
I
Q
gs
Q
gd
4.2
3.7
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 2 A
(Note 2)
(Note 2)
0.6
0.8
24
0.8
1.2
38
V
SD
Source-Drain Diode
Forward Voltage
V
V
GS
= 0 V, I
S
= 19 A
t
rr
Reverse Recovery Time
ns
I
F
= 19 A, di/dt = 300 A/
μ
s
Q
rr
Reverse Recovery Charge
24
38
nC
Notes
:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
a. 50 °C/W when mounted
on a
b. 125 °C/W when mounted on
a
minimum pad of 2 oz copper.
2
1 in
pad of
2 oz
copper.
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
3. E
of 33 mJ is based on starting T
= 25
°
C, L = 0.3 mH, I
= 15 A, V
= 27
V
, V
=
1
0 V.
AS
J
AS
DD
GS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2010 Fairchild Semiconductor Corporation
FDMS0310AS Rev.C2
2
Typical Characteristics
T
J
= 25°C unless otherwise noted
100
5
4
3
2
1
0
V
GS
= 10 V
V
GS
= 6 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3 V
80
60
40
20
0
V
GS
= 4.5 V
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 3 V
V
GS
= 3.5 V
V
GS
= 4 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 6 V
60
V
GS
= 4.5 V
40
V
GS
= 10 V
80 100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
Figure 1.
On Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
16
I
D
= 19 A
GS
= 10 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
14
12
10
8
1.4
1.2
1.0
0.8
0.6
I
D
= 19 A
T
J
= 125
o
C
6
4
T
J
= 25
o
C
2
-75 -50 -25
0
25 50 75
100 125 150
2
4
6
8
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
100
100
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
T
J
= 125
o
80
60
40
20
0
10
1
C
V
DS
= 5 V
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 25
o
C
0.1
T
J
= -55
o
C
T
J
= -55
o
C
0.01
0.001
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDMS0310AS Rev.C2
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
3000
1000
10
I
D
= 19 A
C
iss
C
oss
C
rss
8
6
4
2
0
V
DD
= 15 V
V
DD
= 10 V
V
DD
= 20 V
100
40
f = 1 MHz
= 0 V
V
GS
0
5
10
15
20
25
30
0.1
1
10
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
100
80
60
40
20
0
40
T
J
= 25
o
C
V
GS
= 10 V
10
T
J
= 100
o
C
V
GS
= 4.5 V
T
J
= 125
o
C
R
θ
JC
= 3.0
o
C/W
Limited by Package
25 50
1
0.001
0.01
0.1
1
10
40
75
100
125
150
T
C
,
CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs
Case Temperature
200
100
2000
1000
100
10
100
μ
s
10
1
1 ms
10 ms
THIS AREA IS
100 ms
LIMITED BY r
DS(on)
1 s
SINGLE PULSE
T
J
= MAX RATED
SINGLE PULSE
θ
JA
= 125
o
C/W
0.1
10 s
DC
R
R
θ
JA
= 125
o
C/W
A
= 25
o
C
T
A
= 25
o
C
1
T
0.01
0.5
10
-4
10
-3
10
-2
t, PULSE WIDTH (sec)
10
-1
1
10
0.01
0.1
1
10
100200
100 1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse
Maximum
Power Dissipation
©2010 Fairchild Semiconductor Corporation
FDMS0310AS Rev.C2
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
/t
0.001
R
θ
JA
= 125
o
C/W
1
2
PEAK T
= P
J
x Z
x R
+ T
DM
θ
JA
θ
JA
A
(
Note 1b
)
0.0001
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13.
Junction-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDMS0310AS Rev.C2
5
Typical Characteristics
(continued)
TM
SyncFET Schottky
body diode
Characteristics
Fairchild’s SyncFET
TM
process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
with
a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS0310AS.
0.01
25
20
15
T
J
= 125
o
C
0.001
0.0001
T
J
= 100
o
C
di/dt = 300 A/
μ
s
10
5
1E-5
T
J
= 25
o
C
0
-5
0.000001
0
50
100
150
200
0
5
10
15
20
25
TIME (ns)
V
DS
, REVERSE VOLTAGE (V)
Figure 15. SyncFET
TM
body diode reverse
leakage versus
drain-source voltage
Figure 14. FDMS0310AS SyncFET
TM
body
diode reverse recovery characteristic
©2010 Fairchild Semiconductor Corporation
FDMS0310AS Rev.C2
6
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
5.10
3.91
5.10
PKG
A
SEE
DETAIL B
1.27
6.61
C
L
B
8
7
6
5
8
5
0.77
4.52
3.75
5.85
5.65
C
PKG
6.15
L
KEEP OUT
AREA
1.27
1
4
1
2
3
4
TOP VIEW
0.61
1.27
3.81
LAND PATTERN
RECOMMENDATION
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
SEE
DETAIL C
5.00
4.80
OF THE PACKAGE
0.35
0.15
ꢀꢁꢂꢃ
0.10 C
0.30
0.05
0.05
0.00
SIDE VIEW
ꢀꢁꢂꢃ
8X
0.08 C
C
0.35
0.15
5.20
4.80
1.10
0.90
SEATING
PLANE
DETAIL C
DETAIL B
SCALE: 2:1
3.81
SCALE: 2:1
1.27
0.51
(8X)
0.31
NOTES: UNLESS OTHERWISE SPECIFIED
(0.34)
A. PACKAGE
STANDARD REFERENCE:
JEDEC MO-240,
ISSUE A, VAR. AA,.
0.10
C A B
1
2
3
4
B. DIMENSIONS
DO NOT INCLUDE BURRS OR MOLD FLASH.
MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.
C. ALL
DIMENSIONS ARE IN MILLIMETERS.
0.76
0.51
(0.52)
D. DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M-2009.
E. IT
IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP
OUT AREA.
6.25
5.90
+0.30
3.48
-0.10
(0.50)
(0.30)
(2X)
8
7
6
5
ꢀꢄꢅꢅꢀꢄꢂꢀ
+0.10
-0.15
0.20
(8X)
3.96
3.61
BOTTOM VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800
−
282
−
9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81
−
3
−
5817
−
1050
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
©
Semiconductor Components Industries, LLC
