onsemi-FDMS0346
| Part # | onsemi-FDMS0346 |
Download  | onsemi-FDMS0346 |
October 2014
FDMS0346
N-Channel Power Trench
®
MOSFET
25 V,
5.8 m
Ω
Features
General Description
Max r
DS(on)
= 5.8 m
Ω
at V
GS
= 10 V, I
D
= 17 A
Max r
DS(on)
= 8 m
Ω
at V
GS
= 4.5 V, I
D
= 14 A
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
DS(on),
fast switching speed and body
diode reverse recovery performance.
Advanced Package and Silicon combination for low r
DS(on)
and high efficiency
Next generation enhanced body diode technology, engineered
for soft recovery
Applications
MSL1 robust package design
100% UIL tested
Control MOSFET for Synchronous Buck Converters
Notebook
RoHS Compliant
Server
T
e
lecomm
High Efficiency DC-DC Switch Mode Power Supplies
Bottom
Top
Pin 1
S
G
S
S
S
D
D
D
D
5
6
7
8
4
3
S
S
G
2
1
D
D
D
D
Power 56
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
25
V
V
(Note 4)
±20
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
T
C
= 25 °C
T
C
= 25 °C
T
A
= 25 °C
28
63
I
D
A
(Note 1a)
(Note 3)
(Note 1a)
17
-Pulsed
60
E
AS
Single Pulse Avalanche Energy
Power Dissipation
40
33
mJ
W
T
C
= 25 °C
T
A
= 25 °C
P
D
Power Dissipation
2.5
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3.7
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS0346
FDMS0346
Power 56
3000 units
1
©2009 Fairchild Semiconductor Corporation
FDMS0346 Rev.C1
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
µ
A, V
GS
= 0 V
25
V
∆
BV
DSS
∆
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
µ
A, referenced to 25 °C
V
DS
= 20 V, V
GS
= 0 V
20
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
1
µ
A
Gate to Source Leakage Current,Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
µ
A
1.0
1.6
-6
3.0
V
∆
V
GS(th)
∆
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
µ
A, referenced to 25 °C
mV/°C
V
GS
= 10 V,
I
D
= 17 A
4.6
6.3
6.7
77
5.8
8
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 4.5 V,
I
D
= 14 A
m
Ω
V
GS
= 10 V,
I
D
= 17 A, T
J
= 125 °C
V
DD
= 5 V,
I
D
= 17 A
8.5
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
1221
371
54
1625
495
85
pF
pF
pF
Ω
V
DS
= 13 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.2
2.4
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
8
17
10
33
10
25
11
ns
ns
2.6
20
2.2
18
8
V
DD
= 13 V, I
D
= 17 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
ns
ns
T
o
tal Gate Charge
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
nC
nC
nC
nC
Q
g(TOT)
V
GS
= 0 V to 4.5 V
V
DD
= 13 V
I
D
= 17 A
Q
gs
Q
gd
3.7
1.7
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 2 A
V
GS
= 0 V, I
S
= 17 A
(Note 2)
(Note 2)
0.72
0.83
20
1.1
1.2
32
12
34
24
V
SD
Source to Drain Diode
Forward Voltage
V
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
ns
I
F
= 17 A, di/dt = 100 A/
µ
s
I
F
= 17 A, di/dt = 300 A/
µ
s
Q
rr
6
t
rr
19
Q
rr
13
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
JA
θ
JC
θ
CA
the user’s board design.
a. 50 °C/W when mounted on
a 1 in
pad of
2 oz
copper
b.125 °C/W when mounted on
a minimum pad of
2 oz
copper
2
2. Pulse Test: Pulse Width < 30
0
µ
s, Duty cycle < 2.0 %.
3. E
of 40 mJ is based on starting T
= 25
°
C, L = 1 mH, I
= 9 A, V
= 23 V, V
= 10 V. 100% test at L = 0.3 mH, I
= 14 A.
AS
J
AS
DD
GS
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
2
FDMS0346 Rev.C1
Typical Characteristics
T
J
= 25 °C unless otherwise noted
10
8
60
V
GS
= 10 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µ
s
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 3.5 V
45
V
GS
= 3 V
V
GS
= 3 V
6
30
15
0
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
4
V
GS
= 3.5 V
2
V
GS
= 2.5 V
V
GS
= 10 V
V
GS
= 4.5 V
0
0
15
30
,
DRAIN CURRENT (A)
45
60
10
1.2
0
1
V
DS
2
3
4
5
I
D
,
DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
20
1.6
I
D
= 17 A
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µ
s
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
D
= 17 A
V
GS
= 10 V
15
10
5
T
J
= 125
o
C
T
J
= 25
o
C
0
2
4
6
8
-75 -50 -25
T
J
0
25 50 75
100 125 150
o
C
JUNCTION TEMPERATURE
( )
,
V
GS
,
GATE TO SOURCE VOLTAGE (V)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
60
60
V
GS
= 0 V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
10
1
45
30
15
0
T
J
= 150
o
C
V
DS
= 5 V
T
J
= 25
o
C
T
J
= 150
o
C
0.1
T
J
= 25
o
C
0.01
0.001
T
J
= -55
o
C
T
J
= -55
o
C
0.0
0.2
0.4
0.6
0.8
1.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
3
FDMS0346 Rev.C1
Typical Characteristics
T
J
= 25 °C unless otherwise noted
10
2000
1000
I
D
= 17 A
8
C
iss
V
DD
= 16 V
V
DD
= 10 V
6
4
2
0
C
oss
V
DD
= 13 V
100
30
f = 1 MHz
= 0 V
V
GS
C
rss
0
5
10
Q ,
GATE CHARGE (nC)
15
20
0.1
1
10
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s
D r a i n
to Source Voltage
75
60
45
30
15
0
20
T
J
= 25
o
C
10
T
J
= 100
o
C
V
GS
= 10 V
V
GS
= 4.5 V
T
J
= 125
o
C
R
θ
JC
= 3.7
o
C/W
Limited by Package
1
0.01
0.1
1
10
50
25
50
75
100
125
150
t
AV
, TIME IN AVALANCHE (ms)
T
c
,
CASE TEMPERATURE
( )
o
C
Figur
e
9. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs Case Temperature
1000
100
10
V
GS
= 10 V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
100
µ
s
T
A
= 25
o
C
100
10
1 ms
10 ms
THIS AREA IS
1
100 ms
LIMITED BY r
DS(on)
1 s
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
0.1
10 s
DC
1
0.5
0.01
10
-4
10
-3
10
-2
t, PULSE WIDTH (sec)
10
-1
1
10
100 1000
0.01
0.1
1
10
100
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse Maximum
Power Dissipation
4
FDMS0346 Rev.C1
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
0.01
0.001
1
t
2
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
R
θ
JA
= 125
o
C/W
1
2
PEAK T
= P
J
x Z
x R
+ T
DM
θ
JA
θ
JA
A
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13.
Transient Thermal Response Curve
5
FDMS0346 Rev.C1
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Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
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Rev. I73
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