onsemi-FDMS7560S
| Part # | onsemi-FDMS7560S |
Download  | onsemi-FDMS7560S |
October 2014
FDMS7560S
N-Channel PowerTrench
®
SyncFET
TM
25 V, 49 A, 1.45 m
Ω
Features
General Description
The FDMS7560S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Max r
DS(on)
= 1.45 m
Ω
at V
GS
= 10 V, I
D
= 30 A
Max r
DS(on)
= 2.1 m
Ω
at V
GS
= 4.5 V, I
D
= 26 A
Advanced Package and Silicon combination for low r
DS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
Applications
Synchronous Rectifier for Synchronous Buck Converters
Notebook
Server
RoHS Compliant
Telecom
High Efficiency DC-DC Switch Mode Power Supplies
Bottom
Top
Pin 1
S
D
D
D
G
S
S
S
5
6
7
8
4
3
2
1
S
S
G
D
D
D
D
D
Power 56
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
25
±20
V
V
(Note 4)
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
T
C
= 25 °C
T
C
= 25 °C
T
A
= 25 °C
49
181
I
D
A
(Note 1a)
(Note 3)
30
-Pulsed
180
E
AS
Single Pulse Avalanche Energy
Power Dissipation
220
mJ
W
T
C
= 25 °C
T
A
= 25 °C
89
P
D
Power Dissipation
(Note 1a)
2.5
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.4
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS7560S
FDMS7560S
Power 56
3000 units
1
©2011 Fairchild Semiconductor Corporation
FDMS7560S Rev.C3
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 1 mA, V
GS
= 0 V
D
= 10 mA, referenced to 25 °C
V
DS
= 20 V, V
GS
= 0 V
25
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
21
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
500
100
μ
A
Gate to Source Leakage Current, Forward
V
GS
= 20 V, V
DS
= 0 V
nA
On Characteristics
(Note 2)
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 1 mA
D
= 10 mA, referenced to 25 °C
GS
= 10 V, I
D
= 30 A
1.2
1.7
-5
3.0
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
mV/°C
V
1.2
1.6
1.6
171
1.45
2.1
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 4.5
V
,
I
D
= 26 A
m
Ω
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C
V
DS
= 5 V, I
D
= 30 A
2.0
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
4470
1200
244
5945
1560
370
pF
pF
pF
Ω
V
DS
= 13 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.8
1.8
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
16
7.4
41
29
15
66
10
93
43
ns
ns
V
DD
= 13
V
,
I
D
= 30 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
ns
4.8
66
ns
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
nC
nC
nC
nC
Q
g
V
GS
= 0 V to 4.5 V
30
V
DD
= 13 V,
I
D
= 30 A
Q
gs
Q
gd
13.4
7.5
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 2 A
(Note 2)
(Note 2)
0.40
0.76
35
0.7
1.2
56
V
SD
Source to Drain Diode
Forward Voltage
V
V
GS
= 0 V, I
S
= 30 A
t
rr
Reverse Recovery Time
ns
I
F
= 30 A, di/dt = 300 A/
μ
s
Q
rr
Reverse Recovery Charge
39
63
nC
Notes
:
2
1. R
is determined with the device mounted on a 1in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
a. 50 °C/W when mounted
on a
b. 125 °C/W when mounted on
a
minimum pad of 2 oz copper.
2
1 in
pad of
2 oz
copper.
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
3.
E
of 220 mJ is based on starting T
= 25
°
C, L = 1 mH, I
= 21 A, V
= 23 V, V
= 10 V. 100% test at L = 0.3 mH, I
= 32 A.
AS J
AS DD GS
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
2
FDMS7560S Rev.C3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
12
10
8
180
V
GS
= 10 V
V
GS
= 3 V
V
GS
= 4.5 V
V
GS
= 2.5 V
150
V
GS
= 3.5 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
120
PULSE DURATION = 80
μ
s
V
GS
= 3 V
DUTY CYCLE = 0.5% MAX
90
6
4
60
V
GS
= 2.5 V
V
GS
= 3.5 V
V
GS
= 4.5 V
V
GS
= 10 V
2
30
0
0
0
30
60
90
120
150
180
0
1
2
3
4
5
I
D
,
DRAIN CURRENT (A)
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
6
1.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 30 A
I
D
= 30 A
1.4
1.3
1.2
1.1
1.0
0.9
0.8
5
4
3
2
1
0
V
GS
= 10 V
T
J
= 125
o
C
T
J
= 25
o
C
2
4
6
8
10
-75 -50 -25
0
25 50 75
100 125 150
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
180
100
180
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
150
120
90
60
30
0
V
DS
= 5 V
10
T
J
= 125
o
C
T
J
= 125
o
C
1
T
J
= 25
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0.1
0.01
T
J
= -55
o
C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
3
FDMS7560S Rev.C3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
10000
1000
100
10
I
D
= 30 A
V
DD
= 13 V
8
6
4
2
0
C
iss
V
DD
= 10 V
V
DD
= 16 V
C
oss
f = 1 MHz
= 0 V
C
rss
V
GS
0.1
1
10
30
0
10
20
30
40
50
60
70
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
200
150
100
50
50
T
J
= 25
o
C
V
GS
= 10 V
10
T
J
= 100
o
C
V
GS
= 4.5 V
T
J
= 125
o
C
R
θ
JC
= 1.4
o
C/W
Limited by Package
0
25
1
0.01
0.1
1
10
100
500
50
75
100
125
150
T
c
,
CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs
Case Temperature
300
100
1000
V
GS
= 10 V
SINGLE PULSE
θ
JA
= 125
o
C/W
T
A
= 25
o
C
R
1 ms
100
10
10
1
10 ms
100 ms
THIS AREA IS
LIMITED BY r
DS(on)
1 s
SINGLE PULSE
T
J
= MAX RATED
0.1
10 s
DC
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
1
0.01
0.5
10
-3
10
-2
10
-1
t, PULSE WIDTH (sec)
1
10
0.01
0.1
1
10
100
100
1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse
Maximum
Power Dissipation
4
FDMS7560S Rev.C3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
t
0.01
0.001
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
R
θ
JA
= 125
o
C/W
PEAK T
= P
x Z
x R
+ T
θ
JA
A
J
DM
θ
JA
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13.
Junction-to-Ambient Transient Thermal Response Curve
5
FDMS7560S Rev.C3
Typical Characteristics
(continued)
SyncFET Schottky body diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS7560S.
10
-2
35
30
25
T
J
= 125
o
C
C
10
-3
10
-4
10
-5
10
-6
T
J
= 100
o
20
di/dt = 300 A/
μ
s
15
10
5
T
J
= 25
o
C
0
-5
0
50
100
TIME (ns)
150
200
250
0
5
10
15
20
25
V
DS
, REVERSE VOLTAGE (V)
Figure 14. FDMS7560S SyncFET body
diode reverse recovery characteristic
Figure 15. SyncFET body diode reverses
leakage versus
drain-source voltage
6
FDMS7560S Rev.C3
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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The datasheet is for reference information only.
Rev. I77
© Fairchild Semiconductor Corporation
