onsemi-FDMS86181E
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FDMS86181E
MOSFE
T
,
N
‐Channel,
Shielded Gate,
POWERTRENCH
)
100
V
,
1
24 A, 4.2 m
W
General Description
This N
−
C
hannel MV MOSFET is produced using
®
ON Semiconductor
’
s advanced POWERTRENCH
process that
S
D
D
D
incorporates Shielded Gate technology. This process has been
optimized to minimise on
−
state resistance and yet maintain superior
switching performance with best in class soft body diode.
S
S
G
Features
D
•
Shielded Gate MOSFET Technology
•
Max r
•
Max r
•
ADD
= 4.2 m
W
at V
= 10
V
, I
=
4
4 A
GS D
DS(on)
N-Channel MOSFET
= 12 m
W
at V
= 6
V
, I
=
2
2 A
DS(on)
GS
D
Top
Bottom
S
•
50% lower Qrr than other MOSFET suppliers
•
Lowers switching noise/EMI
•
MSL1 robust package design
•
100% UIL tested
Pin 1
S
S
G
D
D
D
D
•
RoHS Compliant
Power 56
(PQFN8)
Applications
CASE 483AE
•
Primary DC
−
DC MOSFET
•
Synchronous Rectifier in DC
−
DC and AC
−
DC
•
Motor Drive
MARKING DIAGRAM
•
Solar
S
S
D
D
$Y&Z&3&K
FDMS
86181E
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
A
S
D
D
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Value
100
20
Unit
V
G
V
DS
V
GS
V
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (
Y
e
ar & Week)
= Lot
I
D
A
−
Continuous T
= 25
°
C (Note 5)
124
78
17
510
C
−
Continuous T
= 100
°
C (Note 5)
C
−
Continuous T
= 25
°
C (Note 1a)
A
FDMS86181E
= Specific Device Code
−
Pulsed (Note 4)
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation:
337
mJ
W
AS
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
P
D
T
= 25
°
C
125
2.5
C
T =
25
°
C (Note 1a)
A
T , T
Operating and Storage Junction
T
e
mpera-
ture Range
−
55 to
+150
°
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
November, 2018
−
Rev. 2
FDMS86181E/D
FDMS86181E
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Quantity
FDMS86181E
FDMS86181E
Power 56 (PQFN8)
(Pb-Free / Halogen Free)
3000/
T
a
pe&Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
Value
1.0
Unit
°
C/W
R
q
JC
R
50
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250
m
A, V
= 0 V
100
V
DSS
D
GS
D
BV
Breakdown Voltage
T
e
mperature
Coefficient
= 250
m
A, referenced to 25
°
C
60
mV/
°
C
DSS
D
/
D
T
J
DSS
GSS
I
Zero Gate Voltage Drain Current
V
V
= 80 V, V
= 0 V
1
m
A
DS
GS
I
Gate to Source Leakage Current, Forward
=
20
V
, V
= 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V
, I
= 250
m
A
2.0
3.1
4.0
V
GS(th)
GS
DS
D
D
V
/
D
T
Gate to Source Threshold Voltage
T
e
mperature Coefficient
= 250
m
A, referenced to 25
°
C
−
9
mV/
°
C
GS(th)
J
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10
V
, I
=
4
4 A
3.3
5.3
5.7
116
4.2
12
m
W
DS(on)
D
= 6
V
, I
=
2
2 A
D
= 10
V
, I
=
4
4 A, T
= 125
°
C
7.8
D
J
g
FS
= 10
V
, I
=
4
4 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 50
V
, V
= 0 V, f = 1
M
Hz
2945
1730
20
4125
2425
40
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1MHz
0.1
1.3
2.6
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 50
V
, I
=
4
4 A, V
= 10
V
,
GEN
17
9
31
18
40
12
59
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6
W
t
r
t
Turn-Off Delay Time
Fall Time
25
6
d(off)
t
f
Q
T
o
tal Gate Charge
V
= 0 V to 10
V
, V
=
5
0
V
,
42
g
GS
GS
DD
DD
I
D
= 44 A
V
= 0 V to 6
V
, V
=
5
0
V
,
27
38
nC
DD
I
D
= 44 A
Q
Gate to Source Charge
V
= 50
V
, I
=
4
4 A
13
nC
nC
gs
D
Q
Gate to Drain “Miller” Charge
9.3
gd
2
FDMS86181E
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0
V
, I
=
2
.1 A (Note 2)
0.7
0.8
32
1.2
1.3
52
V
SD
GS
S
= 0
V
, I
= 44 A (Note 2)
GS
S
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I =
20 A, di/dt = 300 A/
m
s
F
ns
nC
ns
rr
Q
57
92
rr
t
I =
20 A, di/dt = 1000 A/
m
s
F
25
40
rr
Q
158
253
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5
×
1.5 in. board of FR
−
4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a. 50
°
C/W when mounted on a
1 in
pad of 2 oz copper.
b. 125
°
C/W when mounted on a
minimum pad of 2 oz copper.
2
2. Pulse
T
e
st: Pulse Width < 300
m
s, Duty cycle < 2.0%.
3. E
of 337 mJ is based on starting T
= 25
°
C, N
−
ch: L = 3 mH, I
= 15 A, V
= 100
V
, V
=
1
0 V. 100% test at L = 0.1 mH,
I =
49 A.
AS
J
AS
DD
GS
AS
4. Pulsed
Id please refer to Figure 11 SOA graph for more details.
5. Computed
continuous current limited to Max Junction
T
e
mperature only, actual continuous current will be limited by thermal &
electro
−
mechanical application board design.
TYPICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
6
300
250
V
GS
= 10 V
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5 V
V
GS
= 8 V
V
GS
= 6 V
4
2
0
200
150
V
GS
= 6.5 V
V
GS
=
6.5 V
V
GS
= 6 V
100
50
V
GS
= 8 V
V
GS
= 5 V
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10 V
0
0
50
100
150
200
250
300
0
1
2
3
, DRAIN TO SOURCE VOLTAGE (V)
4
V
I ,
DRAIN CURRENT (A)
D
DS
Figure 1. On Region Characteristics
Figure 2. Normalized On
−
Resistance
vs. Drain Current and Gate Voltage
3
FDMS86181E
TYPICAL CHARACTERISTICS
(continued)
(T =
25
°
C unless otherwise noted)
J
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
I
D
= 44 A
V
GS
= 10 V
I
D
= 44 A
15
10
T
J
= 125
o
C
5
T =
25
o
C
0
−
75
−
50
−
25
0
25 50 75
100 125 150
0
50
100
150
200
250 300
T ,
JUNCTION TEMPERATURE (
5
C)
J
V ,
GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On
−
Resistance vs. Gate
to Source Voltage
300
250
200
300
100
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
V
DS
= 5 V
10
1
150
100
T
J
= 150
o
C
0.1
0.01
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
50
0
T
J
=
−
55
o
C
T
J
=
−
55
o
C
0.001
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
, GATE TO SOURCE VOLTAGE (V)
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
10000
10
8
I
D
= 44 A
C
iss
V
DD
= 50 V
1000
100
10
C
oss
V
DD
= 25 V
6
V
DD
= 75 V
4
C
rss
f = 1 MHz
2
V
GS
= 0 V
1
0.1
0
1
10
100
0
10
20
30
40
50
Q ,
GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
4
FDMS86181E
TYPICAL CHARACTERISTICS
(continued)
(T =
25
°
C unless otherwise noted)
J
140
120
100
100
10
1
R
q
JC
= 1.0
o
C/W
V
GS
= 10 V
o
T =
25 C
J
80
o
T =
100 C
J
60
40
20
0
V
GS
= 6 V
o
T =
125 C
J
0.01
0.1
1
10
100
25
50
75
100
125
150
o
t
, TIME IN AVALANCHE (ms)
, CASE TEMPERATURE
(
T
C
)
AV
c
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
20000
10000
1000
100
10
SINGLE PULSE
q
JC
= 1.
0
o
C/W
R
T
C
= 25
o
C
10
m
s
1000
100
10
THIS AREA IS
LIMITED BY r
DS(on)
100
m
s
SINGLE PULSE
1 ms
1
T
J
= MAX RATED
q
JC
= 1.0
o
C/W
C
= 25
o
C
R
10 ms
DC
CURVE BENT TO
MEASURED DATA
T
0.1
0.1
10
−
5
10
−
4
10
−
3
t, PULSE WIDTH (sec)
10
−
2
10
−
1
1
1
10
100
500
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
2
1
DUTY CYCLE
−
DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.05
0.02
0.01
DM
0.1
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
Z
R
q
JC
q
JC
SINGLE PULSE
o
= 1.0
C/W
q
JC
Peak T
= P
x Z
(t) + T
J
DM
q
JC
C
Duty Cycle, D = t
/ t
1
2
0.001
10
−
5
10
−
4
10
−
3
10
−
2
10
−
1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
5
FDMS86181E
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and or other coun-
tries.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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−
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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◊
FDMS86181E/D
