onsemi-FDMS86500L
| Part # | onsemi-FDMS86500L |
Download  | onsemi-FDMS86500L |
FDMS86500L
MOSFE
T
,
N
‐Channel,
POWERTRENCH
)
60
V
,
1
58 A, 2.5 m
W
General Description
This N
−
Channel MOSFET has been designed specifically
to improve the overall efficiency and to minimize switch node ringing
of DC/DC converters using either synchronous or synchronous or
conventional switching PWM controllers. It has been optimized for
S
D
D
D
low gate charge, low r
reverse recovery performance.
, fast switching speed and body diode
DS(on)
S
S
G
Features
•
Max r
•
Max r
= 2.5 m
W
at V
= 10
V
, I
=
2
5 A
GS D
= 3.7 m
W
at V
= 4.5
V
, I
=
2
0 A
D
DS(on)
DS(on)
GS
D
•
Advanced Package and Silicon combination for low r
and high
N-Channel MOSFET
DS(on)
efficiency
•
Next generation enhanced body diode technology, engineered for soft
Top
Bottom
S
Pin 1
recovery
S
•
MSL1 robust package design
•
100% UIL tested
•
RoHS Compliant
S
G
D
D
D
D
Applications
Power 56
(PQFN8)
CASE 483AE
•
Primary Switch in Isolated DC
−
DC
•
Synchronous Rectifier
•
Load Switch
MARKING DIAGRAM
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
A
S
S
D
D
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Ratings
60
Unit
V
$Y&Z&3&K
FDMS
86500L
V
DS
V
GS
S
D
D
20
V
G
I
D
A
158
100
25
C
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (
Y
e
ar & Week)
= Lot
C
A
799
E
Power Dissipation:
240
mJ
W
AS
FDMS86500L
= Specific Device Code
P
D
T
= 25
°
C
104
2.5
C
A
ORDERING INFORMATION
this data sheet.
T , T
Operating and Storage Junction
T
e
mpera-
ture Range
−
55 to
+150
°
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
November, 2018
−
Rev. 2
FDMS86500L/D
FDMS86500L
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Quantity
FDMS86500L
FDMS86500L
Power 56 (PQFN8)
(Pb-Free / Halogen Free)
3000/
T
a
pe&Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Value
1.2
Unit
°
C/W
R
q
JC
R
50
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250
m
A, V
= 0 V
60
V
DSS
D
GS
D
BV
Breakdown Voltage
T
e
mperature
Coefficient
= 250
m
A, referenced to 25
°
C
30
mV/
°
C
DSS
D
/
D
T
J
DSS
GSS
I
Zero Gate Voltage Drain Current
V
V
= 48 V, V
= 0 V
1
m
A
DS
GS
I
Gate to Source Leakage Current, Forward
=
20
V
, V
= 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V
, I
= 250
m
A
1
1.8
3
V
GS(th)
GS
DS
D
D
V
/
D
T
Gate to Source Threshold Voltage
T
e
mperature Coefficient
= 250
m
A, referenced to 25
°
C
−
7
mV/
°
C
GS(th)
J
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10
V
, I
=
2
5 A
2.1
2.9
3.1
95
2.5
3.7
3.7
m
W
DS(on)
D
= 4.5
V
, I
=
2
0 A
D
= 10
V
, I
=
2
5 A, T
= 125
°
C
D
J
g
FS
= 5
V
, I
=
2
0 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 30
V
, V
= 0 V, f = 1
M
Hz
9420
1470
50
12530
1955
80
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1MHz
0.1
1.1
3.0
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 30
V
, I
=
2
5 A, V
= 10
V
,
GEN
27
16
43
28
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6
W
t
r
t
Turn-Off Delay Time
Fall Time
63
100
16
d(off)
t
f
7.8
117
Q
T
o
tal Gate Charge
V
= 0 V to 10
V
, V
=
3
0
V
,
165
g
GS
GS
DD
DD
I
D
= 25 A
V
= 0 V to 4.5
V
, V
=
3
0
V
,
54
108
nC
DD
I
D
= 25 A
Q
Gate to Source Charge
V
= 30
V
, I
=
2
5 A
26.6
11.5
nC
nC
gs
D
Q
Gate to Drain “Miller” Charge
gd
2
FDMS86500L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
I
Continuous Drain to Source Diode
Forward Current
T
T
= 25
°
C
= 25
°
C
80
A
A
V
s
C
I
Pulse Drain to Source Diode
Forward Current
799
s,pulse
C
V
SD
Source to Drain Diode Forward Voltage
V
V
0.68
0.79
54
1.2
1.3
87
GS
S
GS
S
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I =
25 A, di/dt = 100 A/
m
s
F
ns
nC
ns
Q
42
67
rr
t
rr
I =
25 A, di/dt = 300 A/
m
s
F
46
73
Q
84
134
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5
×
1.5 in. board of FR
−
4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a. 50
°
C/W when mounted on a
1 in
pad of 2 oz copper.
b. 125
°
C/W when mounted on a
minimum pad of 2 oz copper.
2
2. Pulse
T
e
st: Pulse Width < 300
m
s, Duty cycle < 2.0%.
3. E
of 220 mJ is based on starting T
= 25
°
C, L = 0.3 mH, I
= 40 A, V
= 54
V
, V
=
1
0 V. 100% test at L = 0.1 mH, I
= 66 A.
AS
J
AS
DD
GS
AS
5. Computed
continuous current limited to Max Junction
T
e
mperature only, actual continuous current will be limited by thermal &
electro
−
mechanical application board design.
TYPICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
350
280
210
140
70
5
V
= 10 V
GS
=
5 V
V
GS
= 3.5 V
V
GS
4
V
= 4.5 V
GS
V
= 4 V
GS
V
GS
= 4 V
3
2
1
0
V
GS
= 4.5 V
V
= 3.5 V
GS
V
GS
=
10 V
V
GS
=
5 V
PULSE DURATION = 8
0
m
s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 8
0
m
s
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
, DRAIN TO SOURCE VOLTAGE (V)
4
5
0
70
140
I ,
DRAIN CURRENT (A)
D
210
280
350
V
DS
Figure 1. On Region Characteristics
Figure 2. Normalized On
−
Resistance
vs. Drain Current and Gate Voltage
3
FDMS86500L
TYPICAL CHARACTERISTICS
(continued)
(T =
25
°
C unless otherwise noted)
J
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 8
0
m
s
DUTY CYCLE = 0.5% MAX
I
D
= 25 A
I
D
= 25 A
V
GS
= 10 V
6
T
J
= 125
o
C
4
2
T
J
= 25
o
C
0
−
75
−
50
−
25
0
25 50 75
100 125 150
2
4
6
8
10
T ,
JUNCTION TEMPERATURE (
5
C)
J
V ,
GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On
−
Resistance vs. Gate
to Source Voltage
500
350
280
210
140
70
PULSE DURATION = 8
0
m
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
100
V
DS
= 5 V
10
1
T
J
= 150
o
C
T
J
= 25
o
C
0.1
0.01
T
J
= 150
o
C
T
J
= 25
o
C
T
J
=
−
55
o
C
T
J
=
−
55
o
C
0
0.001
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
, GATE TO SOURCE VOLTAGE (V)
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
50000
10000
10
8
I
D
= 25 A
V
DD
= 20 V
C
iss
V
DD
= 30 V
6
C
oss
1000
100
10
V
DD
= 40 V
4
C
rss
2
f = 1 MHz
V
GS
= 0 V
0
0
20
40
60
80
100
120
0.1
1
10
60
Q ,
GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
4
FDMS86500L
TYPICAL CHARACTERISTICS
(continued)
(T =
25
°
C unless otherwise noted)
J
160
120
80
100
T
J
= 25
o
C
T
J
= 100
o
C
V
GS
= 10 V
10
V
GS
= 4.5 V
T
J
= 125
o
C
40
R
q
JC
= 1.2
o
C/W
1
0
25
50
T
75
100
125
150
0.01
0.1
1
10
100
1000
o
t
, TIME IN AVALANCHE (ms)
, CASE TEMPERATURE
(
C
)
AV
c
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1000
100
10
20000
10000
SINGLE PULSE
q
JC
= 1.2
o
C/W
R
10
m
s
T
C
= 25
o
C
1000
100
10
100
m
s
THIS AREA IS
LIMITED BY r
DS(on)
1 ms
SINGLE PULSE
T
J
= MAX RATED
1
R
q
JC
= 1.2
o
C/W
10 ms
DC
CURVE BENT TO
MEASURED DATA
T
C
= 25
o
C
0.1
10
−
5
10
−
4
10
−
3
t, PULSE WIDTH (sec)
10
−
2
10
−
1
1
0.1
1
10
100 300
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
2
1
DUTY CYCLE
−
DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
Z
SINGLE PULSE
q
JC
q
JC
R
= 1.2
5
C/W
q
JC
Peak T
= P
x Z
(t) + T
C
J
DM
q
JC
Duty Cycle, D = t
/ t
1
2
0.001
10
−
5
10
−
4
10
−
3
10
−
2
10
−
1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and or other
countries.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE B
DATE 06 JUL 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
