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October 2014
FDMS8680
N-Channel PowerTrench
®
MOSFET
ꢀ
30V, 35A, 7.0m
:
Features
tm
General Description
Max r
DS(on)
= 7.0m
:ꢀ
at V
GS
= 10V, I
D
= 14A
Max r
DS(on)
= 11.0m
:
at V
GS
= 4.5V, I
D
= 11.5A
The FDMS8680 has been designed to minimize losses in power
conversion application.
Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance.
Advanced Package and Silicon combination for
low r
DS(on)
and high efficiency
Applications
MSL1 robust package design
RoHS Compliant
Low Side for Synchronous Buck to Power Core Processor
Secondary Side Synchronous Rectifier
Low Side Switch in POL DC/DC Converter
Oring FET/ Load Switch
Top
Bottom
Pin 1
S
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
S
S
G
D
D
D
D
Power 56
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
V
V
20
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
T
C
= 25°C
T
C
= 25°C
T
A
= 25°C
35
63
I
D
A
(Note 1a)
(Note 3)
14
-Pulsed
100
E
AS
Single Pulse Avalanche Energy
Power Dissipation
216
mJ
W
T
C
= 25°C
T
A
= 25°C
50
P
D
Power Dissipation
(Note 1a)
2.5
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
T
JC
R
T
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.5
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
FDMS8680
FDMS8680
Power 56
13″
3000units
1
©2009 Fairchild Semiconductor Corporation
FDMS8680 Rev.C3
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
P
A, V
GS
= 0V
30
V
‘
BV
DSS
ꢀꢀꢀ’
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
P
A, referenced to 25°C
V
DS
= 24V,
V
GS
= 0V
24
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
1
P
A
nA
V
GS
=
20V, V
DS
= 0V
100
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
P
A
1.0
1.8
3.0
V
ꢀ’
V
GS(th)
ꢀꢀꢀ’
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
P
A, referenced to 25°C
-5.7
mV/°C
V
GS
= 10V,
I
D
= 14A
5.5
8.5
8.2
72
7.0
11.0
10.5
r
DS(on)
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 4.5V,
I
D
= 11.5A
V
GS
= 10V,
I
D
= 14A, T
J
= 125°C
V
DD
= 10V,
I
D
= 14A
m
:
g
FS
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
1195
555
95
1590
740
145
4.0
pF
pF
pF
:
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
0.8
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
9
3
18
10
34
10
26
14
ns
ns
V
DD
= 15
V
,
I
D
= 14A,
GS
= 10V, R
GEN
= 6
:
V
Turn-Off Delay Time
Fall Time
21
2
ns
ns
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
18
10
3.2
2.7
nC
nC
nC
nC
V
DD
= 15V,
I
D
= 14A
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics
V
SD
t
rr
Source to Drain Diode
Forward Voltage
Reverse Recovery Time
V
GS
= 0V, I
S
= 14A
(Note 2)
0.8
27
15
1.2
44
27
V
ns
nC
I
F
= 14A, di/dt = 100A/
P
s
Q
rr
Reverse Recovery Charge
NOTES:
2
1. R
is determined with the device mounted on a 1in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
the user’s board design.
is guaranteed by design while R
is determined by
T
CA
T
JA
T
JC
a. 50°C/W
when mounted on a
2
b. 125°C/W when mounted on
a
minimum pad of 2 oz copper.
1in pad
of 2 oz copper.
2. Pulse Test: Pulse Width < 30
0
P
s, Duty cycle < 2.0%.
3. Starting T
= 25°C,
L = 3mH, I
= 12A, V
= 30V, V
= 10V.
GS
J
AS
DD
©2009 Fairchild Semiconductor Corporation
FDMS8680 Rev.C3
2
Typical Characteristics
T
J
= 25°C unless otherwise noted
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80
P
s
DUTY CYCLE = 0.5%MAX
V
GS
= 3V
V
GS
= 4V
80
60
40
20
0
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 4V
V
GS
= 3.5V
V
GS
= 3V
V
GS
= 4.5V
PULSE DURATION = 80
P
s
DUTY CYCLE = 0.5%MAX
V
GS
= 10V
0
1
2
3
4
0
20
40
60
80
100
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT(A)
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
1.8
24
I
D
= 14A
GS
= 10V
PULSE DURATION = 80
P
s
DUTY CYCLE = 0.5%MAX
I
D
= 14A
V
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
T
J
= 125
o
C
T
J
= 25
o
C
4
-75 -50 -25
0
25 50 75
100 125 150
2
4
6
8
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE
(
V
)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
100
100
PULSE DURATION = 80
P
s
DUTY CYCLE = 0.5%MAX
V
GS
= 0V
80
60
40
20
0
10
1
V
DD
= 5V
T
J
= 25
o
C
T
J
= 150
o
C
0.1
T
J
= 150
o
C
0.01
0.001
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= -55
o
C
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDMS8680 Rev.C3
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
10
2000
1000
C
iss
I
D
= 14A
8
V
DD
= 10V
V
DD
= 15V
C
oss
6
V
DD
= 20V
4
2
0
100
50
C
rss
f = 1MHz
= 0V
V
GS
0
4
8
12
16
20
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Q ,
GATE CHARGE(nC)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
70
60
50
40
30
20
10
0
20
10
V
GS
= 10V
T
J
= 25
o
C
T
J
= 125
o
C
Limited by Package
R
T
JC
= 2.5
o
C/W
V
GS
= 4.5V
1
0.01
0.1
1
10
100
300
25
50
75
100
125
150
T
C
,
CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE(ms)
Figure9. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs
Case Temperature
200
100
2000
1000
100
10
V
GS
= 10V
SINGLE PULSE
R
T
JA
= 125
o
C/W
T
A
= 25
o
C
100us
1ms
10
1
10ms
THIS AREA IS
100ms
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
T
JA
= 125
o
C/W
1s
0.1
10s
DC
1
T
A
= 25
o
C
0.5
0.01
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
10
2
10
3
0.01
0.1
1
10
100
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse
Maximum
Power Dissipation
©2009 Fairchild Semiconductor Corporation
FDMS8680 Rev.C3
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
SINGLE PULSE
0.001
t
2
R
T
JA
= 125
o
C/W
NOTES:
DUTY FACTOR: D = t
/t
1
2
PEAK T
= P
J
x Z
x R
+ T
DM
T
JA
T
JA
A
0.0001
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 13.
Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDMS8680 Rev.C3
5
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
5.10
3.91
5.10
PKG
A
SEE
DETAIL B
1.27
6.61
C
L
B
8
7
6
5
8
5
0.77
4.52
3.75
5.85
5.65
C
PKG
6.15
L
KEEP OUT
AREA
1.27
1
4
1
2
3
4
TOP VIEW
0.61
1.27
3.81
LAND PATTERN
RECOMMENDATION
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
SEE
DETAIL C
5.00
4.80
OF THE PACKAGE
0.35
0.15
ꢀꢁꢂꢃ
0.10 C
0.30
0.05
0.05
0.00
SIDE VIEW
ꢀꢁꢂꢃ
8X
0.08 C
C
0.35
0.15
5.20
4.80
1.10
0.90
SEATING
PLANE
DETAIL C
DETAIL B
SCALE: 2:1
3.81
SCALE: 2:1
1.27
0.51
(8X)
0.31
NOTES: UNLESS OTHERWISE SPECIFIED
(0.34)
A. PACKAGE
STANDARD REFERENCE:
JEDEC MO-240,
ISSUE A, VAR. AA,.
0.10
C A B
1
2
3
4
B. DIMENSIONS
DO NOT INCLUDE BURRS OR MOLD FLASH.
MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.
C. ALL
DIMENSIONS ARE IN MILLIMETERS.
0.76
0.51
(0.52)
D. DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M-2009.
E. IT
IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP
OUT AREA.
6.25
5.90
+0.30
3.48
-0.10
(0.50)
(0.30)
(2X)
8
7
6
5
ꢀꢄꢅꢅꢀꢄꢂꢀ
+0.10
-0.15
0.20
(8X)
3.96
3.61
BOTTOM VIEW
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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