onsemi-FDMS8D8N15C
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FDMS8D8N15C
N‐Channel Shielded Gate
POWERTRENCH
)
MOSFET
150
V
,
8
5 A, 8.8 m
W
General Description
This N-Channel MV MOSFET is produced using
ON Semiconductor’s advanced PowerTrench process that incorporates
Shielded Gate technology. This process has been optimized to
minimize on
−
state resistance and yet maintain superior switching
performance with best in class soft body diode.
V
R
MAX
I MAX
D
DS
DS(ON)
8.8 m
W
@ 10 V
9.4 m
W
@ 8 V
150 V
85 A
Features
•
Shielded Gate MOSFET Technology
•
Max r
•
Max r
= 8.8 m
W
at V
= 10
V
, I
=
4
5 A
GS D
DS(on)
S (1, 2, 3)
= 9.4 m
W
at V
= 8
V
, I
=
2
2.5 A
DS(on)
GS
D
•
Low Qrr, Soft Recovery Body Diode
•
Lowers Switching Noise/EMI
•
MSL1 Robust Package Design
•
100% UIL Tested
G (4)
•
These Devices are Pb
−
Free and are RoHS Compliant
D (5, 6, 7, 8)
Applications
N-CHANNEL MOSFET
•
Primary DC
−
DC MOSFET
•
Synchronous Rectifier in DC
−
DC and AC
−
DC
•
Motor Drive
Pin 1
•
Solar
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
A
T
o
p
Bottom
Symbol
Parameter
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
Drain Current:
Value
150
20
Unit
V
Power 56
(PQFN8)
CASE 483AF
V
DS
V
GS
V
I
D
A
85
54
12.2
340
C
ORDERING INFORMATION
this data sheet.
C
A
E
Single Pulse Avalanche Energy
102
mJ
W
AS
P
Power Dissipation:
D
T
A
= 25
°
C
132
2.7
C
T , T
Operating and Storage Junction
T
e
mperature Range
−
55 to +150
°
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2018
−
Rev. 0
FDMS8D8N15C/D
FDMS8D8N15C
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.95
46
Unit
Thermal Resistance, Junction
−
to
−
Case
°
C/W
R
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain
−
to
−
Source Breakdown Voltage
I
I
= 250
m
A, V
= 0 V
150
V
DSS
D
GS
D
BV
Breakdown Voltage
T
e
mperature
Coefficient
= 250
m
A, referenced to 25
°
C
86
mV/
°
C
DSS
D
/
D
T
J
DSS
GSS
I
Zero Gate Voltage Drain Current
V
V
= 120 V, V
= 0 V
1
m
A
DS
GS
I
Gate
−
to
−
Source Leakage Current
=
20
V
, V
= 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate
−
to
−
Source Threshold Voltage
V
I
= V
, I
= 250
m
A
2.5
3.5
4.5
V
GS(th)
GS
DS
D
D
V
/
D
T
Gate
−
to
−
Source Threshold Voltage
T
e
mperature Coefficient
= 250
m
A, referenced to 25
°
C
−
7.9
mV/
°
C
GS(th)
J
D
r
Static Drain
−
to
−
Source On Resistance
V
GS
V
GS
V
GS
V
DS
= 10
V
, I
=
4
5 A
7.0
7.6
8.8
9.4
m
W
DS(on)
D
= 8
V
, I
=
2
2.5 A
D
= 10
V
, I
=
4
5 A, T
= 125
°
C
12.8
120
16.1
216
D
J
g
FS
Forward Transconductance
= 10
V
, I
=
4
5 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 75
V
, V
= 0 V, f = 1
M
Hz
3132
927
5.3
3600
1160
9.3
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.73
1.2
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 75
V
, I
=
4
5 A, V
= 10
V
,
GEN
23
19
30
5
40
38
49
10
50
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6
W
t
r
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
Q
T
o
tal Gate Charge
V
= 0 V to 10
V
, V
=
7
5
V
,
38
g
GS
DD
I
= 45 A
D
Q
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain “Miller” Charge
Output Charge
V
DD
V
DD
V
DD
= 75
V
, I
=
4
5 A
16.4
5.7
nC
nC
nC
gs
D
Q
= 75
V
, I
=
4
5 A
D
gd
Q
= 75
V
, V
= 0 V
101
oss
GS
2
FDMS8D8N15C
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source
−
to
−
Drain Diode Forward Voltage
V
V
0.73
0.88
68
0.98
1.0
86
V
SD
GS
S
GS
S
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I =
45 A, di/dt = 100 A/
m
s
F
ns
nC
ns
rr
Q
108
39
172
50
rr
t
I =
45 A, di/dt = 1000 A/
m
s
F
rr
Q
495
748
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5
×
1.5 in. board of FR
−
4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a) 46
°
C/W when mounted on
b) 115
°
C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in
pad of 2 oz copper.
2. Pulse
T
e
st: Pulse Width < 300
m
s, Duty cycle < 2.0%.
3. E
of 102 mJ is based on starting T
= 25
°
C; N-ch: L = 0.1 mH, I
= 45 A, V
= 150 V, V
= 10 V. 100% tested at L = 0.1 mH, I
= 45 A.
AS
J
AS
DD
GS
AS
4. Pulsed
Id please refer to Figure
11
SOA graph for more details. (Note: the final number may change pending results on device characterization).
5. Computed
continuous current limited to Max Junction
T
e
mperature only, actual continuous current will be limited by thermal &
electro-mechanical application board design.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Marking
Package
Reel Size
Tape Width
Quantity
FDMS8D8N15C
FDMS8D8N15C
Power 56 (PQFN8)
(Pb-Free / Halogen Free)
13
″
12 mm
3000 units
3
FDMS8D8N15C
TYPICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted.)
J
300
6
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 6 V
V
GS
= 7 V
Pulse Duration = 250
m
s
Duty Cycle = 0.5% Max
5
4
3
8 V
7 V
V
= 8 V
GS
225
150
75
2
1
0
6 V
5 V
V
GS
= 10 V
Pulse Duration = 250
m
s
Duty Cycle = 0.5% Max
0
0
1
2
3
4
5
0
60
120
180
240
300
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance vs. Drain
Current and Gate Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
Pulse Duration = 250
m
s
Duty Cycle = 0.5% Max
I
V
= 45 A
D
40
30
20
= 10 V
GS
I
D
= 45 A
T =
125
°
C
J
10
0
0.8
0.6
T =
25
°
C
J
−
75
−
50
−
25
0
25
50
75
100 125 150
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (
°
C)
J
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 3. Normalized On
−
Resistance vs.
Figure 4. On
−
Resistance vs. Gate
−
to
−
Source
Junction Temperature
Voltage
200
175
150
125
100
75
Pulse Duration = 250
m
s
Duty Cycle = 0.5% Max
100
V
GS
= 0 V
V
DS
= 10 V
10
1
0.1
T =
25
°
C
J
50
0.01
T =
150
°
C
T =
150
°
C
25
0
J
J
T =
25
°
C
T =
−
55
°
C
T =
−
55
°
C
J
J
J
0.001
3.0 3.5
V
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
0.2
0.4
0.6
0.8
1.0
1.2
, GATE
−
TO
−
SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
GS
Figure 5. Transfer Characteristics
Figure 6. Source
−
to
−
Drain Diode Forward
Voltage vs. Source Current
4
FDMS8D8N15C
TYPICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted.)
J
10K
10
8
V
DD
= 25 V
V
C
iss
I
D
= 45 A
V
DD
= 50 V
= 75 V
1K
DD
C
oss
6
100
4
C
rss
10
1
2
0
V
= 0 V
GS
f = 1 MHz
0
10
20
Q ,
GATE CHARGE (nC)
30
40
0.1
1
10
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
100
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
−
to
−
Source
Voltage
100
100
90
80
70
60
50
40
30
20
R
= 0.95
°
C/W
q
JC
V
GS
= 10 V
V
GS
= 8 V
10
T =
100
°
C
J
T =
25
°
C
J
10
0
T =
125
°
C
J
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
t ,
TIME IN AVALANCHE (ms)
AV
T ,
CASE TEMPERATURE (
°
C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1M
100K
10K
1K
Single Pulse
1K
100
10
R
= 0.95
°
C/W
10
m
s
q
JC
T
C
= 25
°
C
100
m
s
1 ms
10 ms
DC
Single Pulse
= 0.95
°
C/W
R
q
JC
T
C
= 25
°
C
1
100
10
R
Limit
Thermal Limit
Package Limit
DS(on)
0.1
0.00001 0.0001 0.001
0.01
0.1
1
0.1
1
10
100
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
5
FDMS8D8N15C
TYPICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted.)
J
10
1
50% Duty Cycle
20%
10%
5%
P
DM
0.1
t
1
2%
1%
t
2
NOTES:
(t) = r(t) x R
Z
R
q
q
JC
JC
0.01
= 0.95
°
C/W
q
JC
Peak T
= P
Duty Cycle, D = t
/t
x Z
(t) + T
q
JC C
J
DM
Single Pulse
0.000001
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction
−
to
−
Case Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC.
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AF
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13656G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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