onsemi-FDMT1D3N08B

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FDMT1D3N08B

N-Channel Dual Cool

88 PowerTrench

MOSFET

80 V, 164 A, 1.35 m

Features

General Description

Max r

DS(on)

= 1.35 m

at V

= 10 V, I

= 36 A

Max r

DS(on)

= 1.8 m

at V

= 8 V, I

= 31 A

Advanced Package and Silicon Combination for Low r

DS(on)

and High Efficiency

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s

advanced

PowerTrench

process.

Advancements in both silicon and Dual Cool

package

technologies have been combined to offer the lowest r

DS(on)

while maintaining excellent switching performance by extremely

low Junction-to-Ambient thermal resistance.

Next Generation Enhanced Body Diode

chnology,

Engineered for Soft Recovery

Applications

Low Profile 8×8 mm MLP Package

MSL1 Robust Package Design

100% UIL

sted

OringFET / Load Switching

Synchronous Rectification

DC-DC Conversion

RoHS Compliant

Pin 1

Top

Dual Cool

Bottom

MOSFET Maximum Ratings

= 25 °C unless otherwise noted.

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

-Continuous

±20

= 25 °C

_{C
= 100 °C}

(Note 5)

(Note 1a)

(Note 4)

(Note 3)

164

103

-Continuous

= 25 °C

-Pulsed

864

Single Pulse Avalanche Energy

Power Dissipation

1734

178

= 25 °C

(Note 1a)

3.3

, T

STG

Operating and Storage Junction

mperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(

p Source)

(Bottom Drain)

(Note 1a)

1.9

0.7

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

(Note 1b)

°C/W

(Note 1i)

(Note 1j)

(Note 1k)

Package Marking and Ordering Information

Device Marking

Device

Package

Dual Cool

Reel Size

Tape Width

13.3 mm

Quantity

1D3N08B

FDMT1D3N08B

13”

3000 units

Semiconductor Components Industries, LLC, 2016

November, 2016, Rev. 1.0

Publication Order Number:

FDMT1D3N08B/D

Electrical Characteristics

= 25 °C unless otherwise noted.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics

DSS

Drain to Source Breakdown Voltage

= 250

A, V

= 0 V

DSS

Breakdown Voltage

mperature

Coefficient

_{D
= 250
μ
A, referenced to 25 °C}

°C

DSS

GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

= 64 V, V

= 0 V

= ±20 V, V

= 0 V

100

On Characteristics

GS(th)

Gate to Source Threshold Voltage

= V

, I

= 250

2.0

3.2

-11

4.0

GS(th)

Gate to Source Threshold Voltage

mperature Coefficient

_{D
= 250
μ
A, referenced to 25 °C}

= 10 V, I

= 36 A

_{GS
= 8 V, I
D
= 31 A}

mV/°C

1.1

1.3

1.8

116

1.35

1.8

DS(on)

Static Drain to Source On Resistance

Forward Transconductance

= 10 V, I

= 36 A, T

= 125 °C

= 5 V, I

= 36 A

2.2

Dynamic Characteristics

iss

oss

rss

Input Capacitance

14000

2050

19600

2870

150

= 40 V, V

= 0 V,

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

0.1

1.4

2.1

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Rise Time

101

= 40 V, I

= 36 A,

_{GS
= 10 V, R
GEN
= 6
Ω}

Turn-Off Delay Time

Fall Time

109

g(TOT)

tal Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Output Charge

= 0 V to 10 V

= 0 V to 8 V

186

152

260

213

= 40 V,

_{D
= 36 A}

oss

= 40 V, V

= 0 V

185

Drain-Source Diode Characteristics

_{GS
= 0 V, I
S
= 2.6 A}

(Note 2)

0.7

0.8

1.1

1.2

Source to Drain Diode

Forward Voltage

= 0 V, I

= 36 A

Reverse Recovery Time

132

143

= 36 A, di/dt = 100 A/

Reverse Recovery Charge

www.onsemi.com

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(

p Source)

(Bottom Drain)

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1d)

(Note 1e)

(Note 1f)

1.9

0.7

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

°C/W

(Note 1g)

(Note 1h)

(Note 1i)

(Note 1j)

(Note 1k)

(Note 1l)

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

is determined

by the user’s board design.

b. 81 °C/W when mounted on

a minimum pad of 2 oz copper

a. 38 °C/W when mounted on

a 1 in

pad of

2 oz

copper

c. Still air, 20.9×10.4×12.7mm Aluminum Heat Sink, 1 in

pad of 2 oz copper

d. Still air, 20.9×10.4×12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper

e. Still air, 45.2×41.4×11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in

pad of 2 oz copper

f. Still air, 45.2×41.4×11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

g. 200FPM Airflow, No Heat Sink,1 in

pad of 2 oz copper

h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper

i. 200FPM Airflow, 20.9×10.4×12.7mm Aluminum Heat Sink, 1 in

pad of 2 oz copper

j. 200FPM Airflow, 20.9×10.4×12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper

k. 200FPM Airflow, 45.2×41.4×11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in

pad of 2 oz copper

l. 200FPM Airflow, 45.2×41.4×11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 30

s, Duty cycle < 2.0%.

3. E

of 1734

mJ is based on starting T

= 25

C; N-ch: L = 3 mH, I

= 34 A, V

= 80 V, V

=10 V. 100% test at L = 0.3 mH, I

= 77 A.

4. Pulsed Id please refer to Fig 11 SOA graph for more details.

5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.

www.onsemi.com

Typical Characteristics

= 25 °C unless otherwise noted.

320

= 10 V

= 8 V

= 6 V

= 7 V

240

= 6.5 V

160

= 7 V

= 6 V

= 10 V

= 8 V

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

0.0

0.5

1.0

1.5

2.0

128

192

256

320

DRAIN TO SOURCE VOLTAGE (V)

DRAIN CURRENT (A)

Figure 1.

On Region Characteristics

Figur

. N

o r m a l i z e d O n – R e s i s ta n c e

vs. Drain Current and Gate Voltage

1.9

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

= 36 A

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

= 10 V

= 36 A

= 125

= 25

-75 -50 -25

25 50 75

100 125 150

JUNCTION TEMPERATURE

(

)

GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance

vs. Junction Temperature

Figur

. On-Resistance

vs. Gate to

Source Voltage

320

= 0 V

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

= 5 V

100

256

192

128

= 150

= 25

0.1

= 25

= -55

0.01

0.001

= -55

0.0

0.2

0.4

0.6

0.8

1.0

1.2

, GATE TO SOURCE VOLTAGE (V)

, BODY DIODE FORWARD VOLTAGE (V)

Figure 5.

Transfer Characteristics

Figur

. Source

to Drain Diode

Forward Voltage vs. Source Current

www.onsemi.com

Typical Characteristics

= 25 °C unless otherwise noted.

100000

10000

1000

100

= 36 A

iss

= 30 V

= 40 V

oss

= 50 V

rss

f = 1 MHz

_{GS
= 0 V}

120

160

200

0.1

, DRAIN TO SOURCE VOLTAGE (V)

, GATE CHARGE (nC)

Figure 7.

Gate Charge Characteristics

Figur

. C

a p a c i t a n c e v s . D r a i n

to Source Voltage

200

180

144

108

100

= 25

= 10 V

= 100

= 4.5 V

= 125

= 1.9

C/W

0.001 0.01

0.1

100 1000

10000

100

125

150

CASE TEMPERATURE

(

)

, TIME IN AVALANCHE (ms)

Figur

. U

n c l a m p e d I n d u c t i v e

Switching Capability

Figur

0. Maximum Continuous Drain

Current vs.

Case Temperature

1000

100

100000

10000

1000

100

SINGLE PULSE

= 1.9

C/W

_{C
= 25
o
C}

THIS AREA IS

LIMITED BY r

DS(on)

100

1 ms

SINGLE PULSE

= MAX RATED

= 1.9

C/W

10 ms

100 ms

CURVE BENT TO

MEASURED DATA

_{C
= 25
o
C}

0.1

-5

-4

-3

t, PULSE WIDTH (sec)

-2

-1

100

300

, DRAIN to SOURCE VOLTAGE (V)

Figure 11.

Forward Bias Safe

Operating Area

Figur

2. Single Pulse

Maximum

Power Dissipation

www.onsemi.com

Typical Characteristics

= 25 °C unless otherwise noted.

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES:

(t) = r(t) x R

0.01

SINGLE PULSE

= 1.9

C/W

Peak T

= P

x Z

(t) + T

JC C

Duty Cycle, D = t

/ t

0.001

-5

-4

-3

-2

-1

t, RECTANGULAR PULSE DURATION (sec)

Figure 13.

Junction-to-Case Transient Thermal Response Curve

www.onsemi.com

Dimensional Outline and Pad Layout

ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other

countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at

www.onsemi.com/site/pdf/Patent-Marking.pdf.

ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any

liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or

standards, regardless of any support or applications information provided by

ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual

performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON

Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a

critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices

intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall

indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and

reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges

that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is

subject to all applicable copyright laws and is not for resale in any manner.

www.onsemi.com

(2X)

8.00

6.90

2.00

0.05 C

8.00±0.10

1.10

5.23

KEEP OUT

AREA

4.24

3.94

PKG

8.00±0.10

9.00

(1.83)

1.55

0.48

(2.41)

1.13

0.05 C

(2X)

PKG

(1.00)

5.10

7.10

1.10

4.03

3.68

(1.56)

SEE DETAIL A

(8X)

LAND PATTERN

RECOMMENDATION

0.30

0.20

0.95

0.75

0.10

.05

C A B

6.00

0.05

0.00

1.10

SEATING

PLANE

2.00

0.90

(0.40)

(0.50)

0.70

0.50

SCALE: 2X

PIN #1

IDENT

1.68

1.48

NOTES: UNLESS OTHERWISE SPECIFIED

A) THIS PACKAGE IS NOT PRESENTLY REGISTERED

WITH ANY STANDARDS COMMITTEE.

B) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH, AND TIE BAR PROTRUSIONS.

C) ALL DIMENSIONS ARE IN MILLIMETERS.

D) DRAWING CONFORMS TO ASME Y14.5M-2009.

E) IT IS RECOMMENDED TO HAVE NO TRACES OR

VIAS WITHIN THE KEEP OUR AREA.

1.20

2.78

5.33

5.13

(0.91)

0.45

(1.23)

F) DRAWING FILENAME: MKT-PQFN08RREV2

0.25

7.00

6.80

(4X)

(0.60)

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at

www.onsemi.com/site/pdf/Patent

−

Marking.pdf

. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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