onsemi-FDMT800150DC-22897
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DATA SHEET
MOSFET
– N-Channel,
POWERTRENCH
)
,
DUAL COOL
)
88
V
r
MAX
I MAX
D
DS
DS(on)
150 V
6.5 m
W
@ 10 V
8.4 m
W
@ 6 V
99 A
150
V
,
9
9 A, 6.5 m
W
Pin 1
G
Pin 1
FDMT800150DC
S
S
S
S
General Description
D
This N
−
Channel MOSFET is produced using
onsemi
’s advanced
POWERTRENCH process. Advancements in both silicon and
DUAL COOL
package technologies have been combined to offer
D
D
D
Top
Bottom
the lowest r
while maintaining excellent switching performance
DS(on)
PQFN8 8X8, 2P
(Dual Cool 88)
CASE 483AQ
by extremely low Junction
−
to
−
Ambient thermal resistance.
Features
Max r
Max r
= 6.5 m
W
at V
= 10
V
, I
=
1
5 A
GS D
DS(on)
DS(on)
= 8.4 m
W
at V
= 8
V
, I
=
1
3 A
GS
D
MARKING DIAGRAM
Advanced Package and Silicon Combination for Low r
DS(on)
and High Efficiency
Next Generation Enhanced Body Diode Technology, Engineered
for Soft Recovery
5GAYWZ
Low Profile
8
x8
m
m MLP Package
MSL1 Robust Package Design
100% UIL Tested
This Device is Pb
−
Free, Halide Free and RoHS Compliant
5G
A
YW
Z
= Device Code
= Assembly Plant Code
= Date Code
= Traceability Code
Applications
OringFET / Load Switching
Synchronous Rectification
DC
−
DC Conversion
ELECTRICAL CONNECTION
G
D
D
D
S
S
S
D
N-Channel MOSFET
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
August, 2023
−
Rev. 3
FDMT800150DC/D
FDMT800150DC
MOSFET MAXIMUM RATINGS
(T =
25
C unless otherwise noted)
A
Symbol
Parameter
Rating
150
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
20
V
I
Drain Current
−
Continuous
−
Continuous
−
Continuous
−
Pulsed
T
T
= 25
C
99
A
D
C
= 100
C
62
C
T =
25
C
A
15
561
E
AS
Single Pulse Avalanche Energy
Power Dissipation
1093
156
mJ
W
P
T =
25
C
C
D
Power Dissipation
T =
25
C
A
3.2
T , T
Operating and Storage Junction
T
e
mperature Range
−
55 to +150
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Ratings
1.6
0.8
38
Unit
R
(
T
o
p Source)
(Bottom Drain)
C/W
q
JC
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
q
JC
R
q
JA
R
81
q
JA
R
15
q
JA
R
21
q
JA
R
9
q
JA
2
FDMT800150DC
ELECTRICAL CHARACTERISTICS
(T =
25
C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250
m
A, V
= 0 V
GS
150
−
−
−
V
DSS
D
Breakdown Voltage
T
e
mperature
Coefficient
= 250
m
A, referenced to 25
C
−
110
mV/
C
D
BV
DSS
D
T
J
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 120
V
, V
= 0 V
= 0 V
−
−
−
−
1
m
A
DSS
GSS
DS
GS
I
=
20
V
, V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V
, I
= 250
m
A
2.0
3.0
4.0
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
T
e
mperature Coefficient
= 250
m
A, referenced to 25
C
−
−
12
−
mV/
C
D
V
GS(th)
D
T
J
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10
V, I
= 15 A
−
−
−
−
5.4
6.6
11
6.5
8.4
13
−
m
W
DS(on)
D
= 6
V
, I
= 13 A
D
= 10 V, I
= 15 A, T
= 125
C
D
J
g
FS
= 5
V
, I
= 15 A
48
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 75
V
, V
= 0 V, f = 1
M
Hz
−
−
5860
520
17
8205
730
30
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
0.1
1.4
3.5
g
SWITCHING CHARACTERISTICS
td
Turn
−
On Delay Time
Rise Time
V
V
= 75
V
, I
=
1
5 A,
−
−
−
−
−
−
−
−
31
16
41
9.3
77
49
25
14
50
29
66
19
108
69
−
ns
ns
ns
ns
nC
(on)
DD
GS
D
= 10
V
, R
= 6
W
GEN
t
r
t
Turn
−
Off Delay Time
Fall Time
d(off)
t
f
Q
T
o
tal Gate Charge
V
GS
V
GS
V
DD
= 0 V to 10
V
, V
=
7
5
V
, I
=
1
5 A
DD D
g(TOT)
= 0 V to 6
V
, V
=
7
5
V
, I
=
1
5 A
DD
D
Q
Q
Gate to Source Charge
= 75
V
, I
=
1
5 A
nC
nC
gs
D
Gate to Drain “Miller” Charge
−
gd
DRAIN
−
SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0
V
, I
=
2
.9 A
−
−
−
−
0.7
0.8
1.1
1.2
V
SD
GS
S
= 0
V
, I
=
1
5 A
GS
S
t
Reverse Recovery Time
I =
15 A, di/dt = 100 A/
m
s
F
103
233
165
373
ns
rr
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3
FDMT800150DC
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
1.6
0.8
38
Unit
R
q
JC
R
q
JC
R
q
JA
R
q
JA
R
q
JA
R
q
JA
R
q
JA
R
q
JA
R
q
JA
R
q
JA
R
q
JA
R
q
JA
R
q
JA
R
q
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
(
T
o
p Source)
C/W
(Bottom Drain)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
81
26
34
14
16
26
60
15
21
9
11
NOTES:
1. R
is determined with the device mounted on a FR
−
4 board using a specified pad of 2 oz copper as shown below. R
is determined by
q
q
CA
JA
the user’s board design.
a) 38
C/W when mounted on
b) 81
C/W when mounted on
2
a 1 in
pad of 2 oz copper.
a minimum pad of 2 oz copper.
2
c) Still air, 20.9 x 10.4 x 12.7 mm Aluminum Heat Sink, 1 in
pad of 2 oz copper
d) Still air, 20.9 x 10.4 x 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
2
e) Still air, 45.2 x 41.4 x 11.7 mm Aavid Thermalloy Part # 10
−
L41B
−
11 Heat Sink, 1 in
pad of 2 oz copper
f) Still air, 45.2 x 41.4 x 11.7 mm Aavid Thermalloy Part # 10
−
L41B
−
11 Heat Sink, minimum pad of 2 oz copper
2
g) 200FPM Airflow, No Heat Sink, 1 in
pad of 2 oz copper
h) 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
2
i) 200FPM Airflow, 20.9 x 10.4 x 12.7 mm Aluminum Heat Sink, 1 in
pad of 2 oz copper
j) 200FPM Airflow, 20.9 x 10.4 x 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
2
k) 200FPM Airflow, 45.2 x 41.4 x 11.7 mm Aavid Thermalloy Part # 10
−
L41B
−
11 Heat Sink, 1 in
pad of 2 oz copper
l) 200FPM Airflow, 45.2 x 41.4 x 11.7 mm Aavid Thermalloy Part # 10
−
L41B
−
11 Heat Sink, minimum pad of 2 oz copper
2. Pulse
T
e
st: Pulse Width < 300
m
s, Duty cycle < 2.0%.
3. E
of 1093 mJ is based on starting T
= 25
_
C; N
−
ch: L = 3 mH, I
= 27 A, V
= 150
V
, V
= 10 V. 100% test at L = 0.1 mH, I
= 86 A.
AS
J
AS
DD
GS
AS
5. Computed
continuous current limited to Max Junction
T
e
mperature only, actual continuous current will be limited by thermal &
electro
−
mechanical application board design.
4
FDMT800150DC
TYPICAL CHARACTERISTICS
(T =
25
C UNLESS OTHERWISE NOTED)
J
260
208
5
Pulse Duration = 80
m
s
Duty Cycle = 0.5% Max
V
= 5 V
V
GS
= 10 V
GS
4
3
V =
5.5 V
GS
V
GS
= 6.5 V
V
GS
= 6 V
156
104
52
V
GS
= 6 V
2
1
0
V
GS
= 6.5 V
V
GS
= 5.5 V
V
GS
= 10 V
Pulse Duration = 80
m
s
Duty Cycle = 0.5% Max
V
4
= 5 V
GS
0
1
2
3
5
0
52
104
156
208
260
0
I ,
Drain Current (A)
D
V
DS
, Drain to Source Voltage (V)
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance
vs. Drain Current and Gate Voltage
2.5
2.0
1.5
1.0
0.5
40
30
20
Pulse Duration = 80
m
s
Duty Cycle = 0.5% Max
I
= 15 A
GS
D
V
= 10 V
I
D
= 15 A
T =
125
C
J
10
0
T =
25
C
J
−
75
−
50
−
25
0
25
50
75 100 125
150
4
5
6
7
8
9
10
V
GS
, Gate to Source Voltage (V)
T ,
Junction Temperature (
5
C)
J
Figure 3. Normalized On
−
Resistance
Figure 4. On
−
Resistance vs. Gate to Source Voltage
vs. Junction Temperature
300
260
208
156
V
GS
= 0 V
Pulse Duration = 80
m
s
Duty Cycle = 0.5% Max
100
V
DS
= 5 V
10
T =
150
C
J
1
104
52
0.1
T =
25
C
J
T =
25
C
J
T =
150
C
J
0.01
T =
−
55
C
J
T =
−
55
C
J
0
0.001
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
5
FDMT800150DC
TYPICAL CHARACTERISTICS
(T =
25
C UNLESS OTHERWISE NOTED) (CONTINUED)
J
10
8
10000
I
D
= 15 A
C
V
DD
= 50 V
iss
V
= 75 V
DD
1000
100
10
6
C
oss
V
DD
= 100 V
4
C
rss
2
0
f = 1 MHz
V
GS
= 0 V
0
16
32
48
64
80
0.1
1
10
100
150
1
V
, Drain to Source Voltage (V)
Q ,
Gate Charge (nC)
DS
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
100
120
R
= 0.8
C/W
q
JC
90
T =
25
C
J
V
GS
= 10 V
T =
100
C
J
10
60
30
V
GS
= 6 V
T =
125
C
J
1
0.01
0
0.1
1
10
100
1000
25
50
75
100
125
t
, Time in Avalanche (ms)
T ,
Case Temperature (
5
C)
C
AV
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
700
50000
10000
1000
100
100
10
1
10
m
s
This Area is
Limited by r
100
m
s
DS(on)
1 ms
Single Pulse
T =
Max Rated
Single pulse
R =
0.8
C/W
T =
25
C
C
J
R
= 0.8
C/W
Curve Bent to
10 ms
DC
q
JC
q
JC
T
C
= 25
C
Measured Data
0.1
10
−
5
−
4
−
3
−
2
−
1
0.1
1
10
100
600
10
10
10
10
10
t, Pulse Width (s)
V
DS
, Drain to Source Voltage (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
6
FDMT800150DC
TYPICAL CHARACTERISTICS
(T =
25
C UNLESS OTHERWISE NOTED) (CONTINUED)
J
2
1
Duty Cycle
−
Descending Order
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
Notes:
Z
R
(t) = r(t) x R
= 0.8
C
/W
q
q
JC
JC
Single pulse
q
JC
Peak T
= P
x
Z (t)
+ T
q
J
DM
JC
C
Duty Cycle, D = t
/ t
1
2
0.001
−
5
−
4
−
3
−
2
−
1
10
10
10
10
10
1
t, Rectangular Pulse Duration (s)
Figure 13. Junction
−
to
−
Case Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
Package
Reel Size
Tape Width
Shipping
800150DC
FDMT800150DC
PQFN8 8X8, 2
P
,
DUAL COOL 88
13.3 mm
3000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates and/or sub-
sidiaries in the United States and/or other countries.
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 8X8, 2P
CASE 483AQ
ISSUE B
DATE 24 OCT 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13665G
PQFN8 8X8, 2P
PAGE 1 OF 1
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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