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2015
年
8
月
FDMT80080DC
N-Channel Dual Cool
TM
88 PowerTrench
®
MOSFET
80 V, 254 A, 1.35 m
特性
概述
此
N
沟
道
MOSFET
采
用
Fairchild
先进
的
PowerTrench
®
工艺生
产。先进的硅技术
和
Dual Cool
TM
封装技术完美融合，可在提供
最小
r
DS(on)
的同时通过极低的结至环境热阻保持卓越的开关性
能。
最大
值
r
DS(on)
= 1.35 m
（
V
GS
= 10 V
、
I
D
= 36 A
）
最大
值
r
DS(on)
= 1.82 m
（
V
GS
= 8 V
、
I
D
= 31 A
）
低
r
DS(on)
和高效的先进硅封装
下一代先进体二极管技术，专为软恢复设计
薄
型
8x8mm MLP
封装
MSL1
强健封装设计
应用
OringFET/
负载开关
同步整流
100%
经
过
UIL
测试
符
合
RoHS
标准
DC-DC
转换
G
引 脚
引
脚
1
S
D
D
D
D
G
S
S
S
S
S
S
D
D
D
D
Dual Cool
TM
88
顶
底
MOSFET
最大额定
值
T
A
= 25 °C
，除非另有说明。
符号
参数
额定值
单位
V
DS
V
GS
80
V
漏极－源极电压
栅极－源极电压
漏极电流－连续
－连续
±20
254
V
T
C
= 25 °C
TC = 100°C
T
A
= 25 °C
（
注
5
）
（
注
5
）
（
注
1a
）
（
注
4
）
（
注
3
）
160
I
D
A
36
－连续
1453
1734
156
－脉冲
E
AS
P
D
mJ
W
单脉冲雪崩能量
功耗
T
C
= 25 °C
T
A
= 25 °C
3.2
功耗
（
注
1a
）
T
J
, T
STG
-55 to +150
°C
工作和保存结温范围
热特性
R
JC
R
JC
R
JA
R
JA
R
JA
R
JA
R
JA
1.6
0.8
38
81
15
21
9
结至外壳热阻
结至外壳热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
（顶部源极）
（底部漏极）
（
注
1a
）
（
注
1b
）
（
注
1i
）
°C/W
（
注
1j
）
（
注
1k
）
封装标识与定购信息
器件封装
器件
封装
Dual Cool
TM
88
卷盘大小
13”
卷带宽度
13.3 mm
数量
80080DC
FDMT80080DC
3000
件
©2015
飞兆半导体公司
1
FDMT80080DC Rev. 1.0
电气特
性
T
J
= 25 °C
，除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BV
DSS
I
D
= 250
A, V
GS
= 0 V
I
D
= 250
A
，参
考
25 °C
80
V
漏极－源极击穿电压
BV
DSS
T
J
41
mV/°C
击穿电压温度系数
I
DSS
I
GSS
V
DS
= 64 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
1
A
零栅极电压漏极电流
栅极－源极漏电流
100
nA
导通特性
V
GS(th)
V
GS
= V
DS
, I
D
= 250
A
I
D
= 250
A
，参
考
25 °C
2.0
3.1
-12
4.0
V
栅极至源极阀值电压
V
GS(th)
T
J
mV/°C
栅极至源极阀值电压温度系数
V
GS
= 10 V, I
D
= 36 A
1.06
1.23
1.74
116
1.35
1.82
2.22
r
DS(on)
g
FS
V
GS
= 8 V, I
D
= 31 A
m
漏极至源极静态导通电阻
正向跨导
V
GS
= 10 V, I
D
= 36 A, T
J
= 125 °C
V
DS
= 5 V, I
D
= 36 A
S
动态特性
C
iss
14800
2080
56
20720
2915
125
pF
pF
pF
输入电容
V
DS
= 40 V, V
GS
= 0 V,
f = 1 MHz
C
oss
输出电容
C
rss
反向传输电容
栅极阻抗
R
g
0.1
1.8
4.5
开关特性
t
d(on)
t
r
67
65
108
104
120
48
ns
ns
导通延迟时间
上升时间
V
V
DD
= 40 V, I
D
= 36 A,
GS
= 10 V, R
GEN
= 6
t
d(off)
t
f
75
ns
关断延迟时间
下降时间
30
ns
Q
g(TOT)
Q
g(TOT)
Q
gs
195
159
69
273
223
nC
nC
nC
nC
总栅极电荷
V
GS
= 0 V
至
10 V
V
GS
= 0 V
至
8 V
总栅极电荷
V
DD
= 40 V,
I
D
= 36 A
栅极－源极电荷
栅极－漏
极
“
米
勒
”
电荷
Q
gd
36
漏极－源极二极管特性
0.7
0.8
81
1.1
1.2
V
GS
= 0 V, I
S
= 2.6 A
（
注
2
）
（
注
2
）
V
SD
V
源极－漏极二极管正向电压
V
GS
= 0 V, I
S
= 36 A
t
rr
130
141
ns
反向恢复时间
反向恢复电荷
I
F
= 36 A, di/dt = 100 A/ms
Q
rr
88
nC
©2015
飞兆半导体公司
FDMT80080DC Rev. 1.0
2
热特性
R
JC
R
JC
R
JA
R
JA
R
JA
R
JA
R
JA
R
JA
R
JA
R
JA
R
JA
R
JA
R
JA
R
JA
1.6
0.8
38
81
26
34
14
16
26
60
15
21
9
结至外壳热阻
结至外壳热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
（顶部源极）
（底部漏极）
（
注
1a
）
（
注
1b
）
（
注
1c
）
（
注
1d
）
（
注
1e
）
（
注
1f
）
（
注
1g
）
（
注
1h
）
（
注
1i
）
°C/W
（
注
1j
）
（
注
1k
）
（
注
1l
）
11
注：
1. R
通过安装
在
FR-4
电路板上的器件确定，该电路板使用指定
的
2 oz
铜焊盘，如下图所示
。
R
由用户的电路板设计确定
。
JA
CA
b. 81 °C/
W
（安装
于
最
小
2 oz
铜焊盘）
a. 38 °C/W
（安装
于
a 1
平方英
寸
2 oz
铜焊盘）
c.
静止空气
，
20.9×10.4×12.7mm
铝质散热器
，
1
平方英
寸
2 oz
铜焊盘
d.
静止空气
，
20.9×10.4×12.7mm
铝质散热器，最
小
2 oz
铜焊盘
e.
静止空气
，
45.2×41.4×11.7mm Aavid Thermalloy
器件
号
10-L41B-11
散热器
，
1
平方英
寸
2 oz
铜焊盘
f.
静止空气
，
45.2×41.4×11.7mm Aavid Thermalloy
器件
号
10-L41B-11
散热器，最
小
2 oz
铜焊盘
g. 200FPM
气流，无散热器
，
1
平方英
寸
2 oz
铜焊盘
h. 200FPM
气流，无散热器，最
小
2 oz
铜焊盘
i. 200FPM
气流
，
20.9×10.4×12.7mm
铝质散热器
，
1
平方英
寸
2 oz
铜焊盘
j. 200FPM
气流
，
20.9×10.4×12.7mm
铝质散热器，最
小
2 oz
铜焊盘
k. 200FPM
气流
，
45.2×41.4×11.7mm Aavid Thermalloy
器件
号
10-L41B-11
散热器
，
1
平方英
寸
2 oz
铜焊盘
l. 200FPM
气流
，
45.2×41.4×11.7mm Aavid Thermalloy
器件
号
10-L41B-11
散热器，最
小
2 oz
铜焊盘
2.
脉冲测试：脉冲宽度：
< 300 ms
，占空比：
< 2.0%
。
3. E
为
1734 mJ
，基于起
始
T =
25
°
C
；
N-ch
：
L = 3 mH
，
I =
34 A
、
V =
80 V
、
V =10
V
。
100%
经过测
试
（
L = 0.3 mH
、
I =
75 A
）
AS
J
AS
DD
GS
AS
4.
有关脉冲编号的更多详情，请参考
图
11
中
的
SOA
图形。
5.
计算得到的连续电流仅限于最大结温，实际连续电流将受限于散热以及电气机械应用的电路板设计。
©2015
飞兆半导体公司
FDMT80080DC Rev. 1.0
3
典型特
性
T
J
= 25 °C
，除非另有说明。
320
5
4
3
2
1
0
V
GS
= 1
0
V
V
GS
= 5.5 V
V
GS
= 8 V
240
V
GS
= 6 V
V
GS
= 6.5 V
160
V
GS
= 6 V
V
GS
= 6.5 V
V
GS
= 8 V
V
GS
= 5.5 V
80
0
V
GS
= 10 V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
5
0
80
160
240
320
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
图
1.
通态区域特性
图
2.
标准化导通电阻与漏极电流和栅极电压的关系
1.8
1.6
1.4
1.2
1.0
0.8
0.6
6
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
I
D
= 36 A
V
GS
= 10 V
5
I
D
= 36 A
4
3
T
J
= 125
o
C
2
1
0
T
J
= 25
o
C
-75 -50 -25
0
25 50 75
100 125 150
4
5
6
7
8
9
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
图
3.
标准化导通电阻与结温的关系
图
4.
导通电阻与栅
极
—
源极电压的关系
320
240
160
80
320
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
100
V
DS
= 5 V
10
T
J
= 150
o
C
1
T
J
= 150
o
C
0.1
T
J
= 25
o
C
T
J
= 25
o
C
0.01
T
J
= -55
o
C
T
J
= -55
o
C
0
0.001
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
图
5.
传输特性
图
6.
源
极
—
漏极二极管正向电压与源极电流的关系
©2015
飞兆半导体公司
FDMT80080DC Rev. 1.0
4
典型特
性
T
J
= 25 °C
，除非另有说明。
10
50000
10000
I
D
= 36 A
C
iss
V
DD
= 40 V
8
6
4
2
0
C
oss
V
DD
= 30 V
1000
100
10
V
DD
= 50 V
C
rss
f = 1 MHz
GS
= 0 V
V
0
40
80
120
160
200
0.1
1
10
80
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
图
7.
栅极电荷特性
图
8.
电容与漏
极
—
源极电压的关系
300
240
180
120
60
100
10
1
R
JC
= 0.8
o
C/W
V
GS
= 10 V
T
J
= 25
o
C
T
J
= 100
o
C
V
GS
= 8 V
T
J
= 125
o
C
0
25
0.01
0.1
1
10
100
1000 10000
50
75
100
125
150
T
C
,
CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
图
9.
非箝位电感开关能力
图
10.
最大连续漏极电流与壳温的关系
2000
50000
10000
1000
100
10
SINGLE PULSE
R
JC
= 0.8
o
C/W
T
C
= 25
o
C
10
s
1000
100
10
THIS AREA IS
LIMITED BY r
DS(on)
100
s
1 ms
SINGLE PULSE
T
J
= MAX RATED
1
R
JC
= 0.8
o
C/W
T
C
= 25
o
C
10 ms
DC
CURVE BENT TO
MEASURED DATA
0.1
0.1
10
-5
10
-4
10
-3
t, PULSE WIDTH (sec)
10
-2
10
-1
1
10
100
300
1
V
DS
, DRAIN to SOURCE VOLTAGE (V)
图
11.
正向偏压安全工作区
图
12.
单个脉冲最大功耗
©2015
飞兆半导体公司
FDMT80080DC Rev. 1.0
5
典型特
性
T
J
= 25 °C
，除非另有说明。
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
t
1
t
2
0.01
0.001
注：
Z
(t) = r(t) x R
o
JC
JC
= 0.8
C/W
SINGLE PULSE
R
JC
峰
值
T =
P
占空
比
D = t
/ t
x Z
(t) + T
J
DM
JC
C
1
2
10
-5
10
-4
10
-3
10
-2
10
-1
1
t, RECTANGULAR PULSE DURATION (sec)
图
13.
结至外壳瞬态热响应曲线
©2015
飞兆半导体公司
FDMT80080DC Rev. 1.0
6
(2X)
8
8.00
6.90
2.00
0.05 C
A
8.00±0.10
8
B
5
5
1.10
5.23
KEEP OUT
AREA
4.24
3.94
PKG
L
8.00±0.10
9.00
C
(1.83)
1.55
0.48
(2.41)
1.13
0.05 C
(2X)
1
4
PKG
1
4
C
L
(1.00)
5.10
7.10
1.10
4.03
3.68
(1.56)
SEE DETAIL A
(8X)
LAND PATTERN
RECOMMENDATION
0.30
0.20
0.95
0.75
0.10
.05
C A B
6.00
C
C
0.05
0.00
8X
1.10
SEATING
PLANE
2.00
0.90
(0.40)
(0.50)
0.70
0.50
SCALE: 2X
1
2
3
4
PIN #1
IDENT
1.68
1.48
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE IS NOT PRESENTLY REGISTERED
WITH ANY STANDARDS COMMITTEE.
B) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR PROTRUSIONS.
C) ALL DIMENSIONS ARE IN MILLIMETERS.
D) DRAWING CONFORMS TO ASME Y14.5M-2009.
E) IT IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP OUR AREA.
1.20
2.78
5.33
5.13
(0.91)
0.45
(1.23)
F) DRAWING FILENAME: MKT-PQFN08RREV2
8
7
6
5
0.25
7.00
6.80
(4X)
(0.60)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
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