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September 2016
FDN028N20
N-Channel PowerTrench
®
MOSFET
20 V, 6.1 A, 28 m
Ω
Features
General Description
Max r
DS(on)
= 28 m
Ω
at V
GS
= 4.5 V, I
D
= 5.2 A
This N-Channel PowerTrench MOSFET is produced using
Fairchild’s advanced PowerTrench
®
process that has been
especially tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching performance.
Max r
DS(on)
= 45 m
Ω
at V
GS
= 2.5 V, I
D
= 4.4 A
High Performance Trench
T
e
chnology for Extremely Low
r
DS(on)
Applications
High Power and Current Handling Capability in a Widely Used
Surface Mount Package
Primary DC-DC Switch
Load Switch
Fast Switching Speed
100% UIL
T
e
sted
RoHS Compliant
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted.
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
20
V
V
(Note 3)
(Note 1a)
(Note 5)
±12
-Continuous
T
A
= 25°C
6.1
I
D
A
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
52
E
AS
P
D
(Note 4)
6
1.5
mJ
W
( Note 1a)
(Note 1b)
Power Dissipation
0.6
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to + 150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
75
80
°C/W
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7 ’’
Tape Width
8 mm
Quantity
28N
FDN028N20
SSOT-3
3000 units
©2016 Fairchild Semiconductor Corporation
FDN028N20 Rev.1.0
1
Electrical Characteristics
T
J
= 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V
20
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25°C
15
mV
/
°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 12 V, V
DS
= 0 V
1
μ
A
100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
0.5
0.9
-3
1.5
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25°C
V
GS
= 4.5
V
, I
D
= 5.2 A
GS
= 2.5
V
, I
D
= 4.4 A
mV/°C
23
32
28
45
V
r
DS(on)
Static Drain to Source On Resistance
Forward Transconductance
m
Ω
V
GS
= 4.5
V
, I
D
= 5.2 A,
T
J
= 125°C
30
28
41
g
FS
V
DS
= 5 V, I
D
= 5.2 A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
399
91
600
140
130
pF
pF
pF
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
87
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
5
10
10
ns
ns
2
V
DD
= 10 V, I
D
= 5.2 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
15
2
29
ns
10
ns
Q
g(TOT)
Q
g(TOT)
Q
gs
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 4.5 V
V
GS
= 0 V to 2.5 V
4.3
2.8
0.7
1.6
6.0
3.9
nC
nC
nC
nC
V
DD
= 10 V,
I
D
=
5.
2
A
Q
gd
Drain-Source Diode Characteristics
V
SD
t
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= 5.2 A
(Note 2)
0.85
13
3
1.2
27
10
V
ns
nC
I
F
= 5.2 A, di/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
Notes
:
1. R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θ
JA
θ
JC
is guaranteed by design while R
is determined by
the user’s board design.
θ
CA
b)
180 °C/W when mounted on
a
minimum pad.
a)
80 °C/W when mounted on a
1 in
pad of
2 oz
copper
2
2. Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
4. E
of 6 mJ is based on starting T
= 25
°
C, L = 3 mH, I
= 2 A, V
= 20 V, V
= 10 V.
100% test at L = 0.1 mH, I
= 7 A.
AS
J
AS
DD
GS
AS
5. Pulsed Id please refer to Fig 10 SOA graph for more details.
©2016 Fairchild Semiconductor Corporation
FDN028N20 Rev.1.0
2
Typical Characteristics
T
J
= 25 °C unless otherwise noted.
16
4.5
3.0
1.5
0.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5 V
V
GS
= 2 V
V
GS
= 1.8 V
12
V
GS
= 3 V
V
GS
= 2.5 V
V
GS
= 2 V
8
V
GS
= 4.5 V
V
GS
= 3 V
V
GS
= 2.5 V
4
V
GS
= 1.8 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
2.0
0
4
8
12
16
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
Figure 1.
On Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs. Drain Current and Gate Voltage
1.5
80
I
D
= 5.2 A
PULSE DURATION = 80
μ
s
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5 V
60
40
20
0
I
D
= 5.2 A
T
J
= 125
o
C
T
J
= 25
o
C
-75 -50 -25
0
25 50 75
100 125 150
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figur
e
4
. On-Resistance
vs. Gate to
Source Voltage
16
20
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
10
V
DS
= 5 V
12
8
V
GS
= 0 V
1
T
J
= 25
o
C
0.1
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= -55
o
C
4
0.01
0.001
T
J
= 150
o
C
T
J
= -55
o
C
0
0
1
2
3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs. Source Current
©2016 Fairchild Semiconductor Corporation
FDN028N20 Rev.1.0
3
Typical Characteristics
T
J
= 25 °C unless otherwise noted.
4.5
1000
100
10
I
D
= 5.2 A
C
iss
V
DD
= 10 V
3.0
C
oss
C
rss
V
DD
= 8 V
V
DD
= 12 V
1.5
0.0
f = 1 MHz
GS
= 0 V
V
0
1
2
3
4
5
0.1
1
10
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s . D r a i n
to Source Voltage
100
10
10
9
THIS AREA IS
LIMITED BY r
DS(on)
10
μ
s
8
7
6
5
T
J
= 25
o
C
T
J
= 100
o
100
μ
s
4
T
J
= 125
o
C
1
1 ms
3
2
C
10 ms
100 ms
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 180
o
C/W
0.1
0.01
1 s
10 s
DC
CURVE BENT TO
MEASURED DATA
T
A
= 25
o
C
1
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
F i g u r e 9 .
U n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Forward
Bias Safe
Operating Area
1000
SINGLE PULSE
R
θ
JA
= 180
o
C/W
A
= 25
o
T
C
100
10
1
0.1
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (sec)
10
-1
1
10
100
1000
Figure 11.
Single Pulse Maximum Power Dissipation
©2016 Fairchild Semiconductor Corporation
FDN028N20 Rev.1.0
4
Typical Characteristics
T
J
= 25 °C unless otherwise noted.
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
Z
SINGLE PULSE
0.001
0.0001
θ
JA
θ
JA
o
R
= 180
C/W
θ
JA
Peak T
= P
x Z
(t) + T
J
DM
θ
JA A
Duty Cycle, D = t
/ t
1
2
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 12.
Junction-to-Ambient Transient Thermal Response Curve
©2016 Fairchild Semiconductor Corporation
FDN028N20 Rev.1.0
5
0.95
2.92±0.12
3
A
1.40
B
1.40±0.12
2.20
1
2
0.508
0.382
(0.29)
1.00
M
0.10
A B
0.95
1.90
LAND PATTERN RECOMMENDATION
1.90
SEE DETAIL A
1.12 MAX
0.10
0.00
(0.94)
M
0.10
C
C
2.51±0.20
GAGE PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
A) NO
JEDEC REFERENCE AS OF AUGUST 2003
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS
ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M – 2009.
0.178
0.102
0.20
E) DRAWING
FILE NAME: MKT-MA03BREV3
0.43
0.33
SEATING
PLANE
(0.56)
SCALE: 50:1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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