onsemi-FDN339AN
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November 1999
FDN339AN
N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET
is produced
using Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
•
3 A, 20
V
.
R
DS(ON)
= 0.035
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.050
Ω
@ V
GS
= 2.5 V.
•
Low gate charge (7nC typical).
Applications
•
High performance trench technology for extremely
low R
DS(ON)
.
•
DC/DC converter
•
Load switch
•
High power and current handling capability.
D
D
S
G
S
SuperSOT
T
M
-3
G
Absolute Maximum Ratings
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
20
V
V
A
8
±
Drain Current
– Continuous
– Pulsed
3
(Note 1a)
20
0.5
P
D
Power Dissipation for Single Operation
W
(Note 1a)
(Note 1b)
0.46
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
°
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
250
75
R
θ
(Note 1a)
(Note 1)
C/W
C/W
°
JA
Thermal Resistance, Junction-to-Case
R
θ
°
JC
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
339
FDN339AN
7
’’
8mm
3000 units
1999 Fairchild Semiconductor Corporation
FDN339AN Rev.
C
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
20
V
µ
A
V
GS
= 0 V, I
D
= 250
Breakdown Voltage Temperature
Coefficient
14
∆
DSS
µ
°
°
mV/ C
BV
∆
I
D
= 250
A,Referenced to 25 C
T
J
I
DSS
I
GSSF
Zero Gate Voltage Drain Current
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
1
µ
A
Gate-Body Leakage Current,
Forward
100
nA
I
GSSR
Gate-Body Leakage Current,
Reverse
V
GS
= -8 V, V
DS
= 0 V
-100
1.5
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
0.4
10
0.85
-3
V
µ
DS
= V
GS
, I
D
= 250
A
V
Gate Threshold Voltage
Temperature Coefficient
∆
GS(th)
µ
°
°
V
I
D
= 250
A,Referenced to 25 C
mV/ C
∆
T
J
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 4.5 V, I
D
= 3 A
V
GS
= 4.5 V, I
D
= 3 A, T
J
=125 C
V
GS
= 2.5 V, I
D
= 2.4 A
V
GS
= 4.5 V, V
DS
= 5 V
0.029 0.035
0.040 0.061
0.039 0.050
Ω
°
I
D(on)
g
FS
On-State Drain Current
A
S
Forward Transconductance
V
DS
= 5 V, I
D
= 3 A
11
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
V
DS
= 10 V, V
GS
= 0 V,
700
175
85
pF
pF
pF
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V, I
D
= 1 A,
8
10
18
5
16
18
29
10
10
ns
ns
Ω
V
GS
= 4.5 V, R
GEN
= 6
ns
ns
Q
g
V
DS
= 10 V, I
D
= 3 A,
7
nC
nC
nC
V
GS
= 4.5 V
Q
gs
Q
gd
1.2
1.9
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
0.42
1.2
A
V
(Note
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.42 A
0.65
2)
Notes:
1:
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θ
JC
is guaranteed by design while R
θ
C
A
is determined by the user’s board design.
b) 270
°
C/W on a minimum
mounting pad of 2 oz. Cu.
a) 250
°
C/W when
mounted on a 0.02 in
2
Pad of 2 oz. Cu.
Scale
1 : 1 on
letter size paper
2:
Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
FDN339AN Rev.
C
Typical Characteristics
20
2
1.8
1.6
1.4
1.2
1
V
GS
= 4.5V
2.5V
3.0V
16
V
GS
= 2.0V
12
2.0V
2.5V
8
4
0
3.0V
3.5V
4.0V
4.5V
16
1.5V
0.8
0
4
8
12
20
0
0.5
1
1.5
2
2.5
3
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.1
1.6
1.4
1.2
1
I
D
= 3A
GS
= 4.5V
I
D
= 1.5A
V
0.08
0.06
0.04
0.02
0
T
A
= 125
o
C
T
A
= 25
o
C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
10
1
20
T
A
= -55
o
C
V
GS
= 0V
V
DS
= 5V
25
o
C
125
o
C
16
12
8
T
A
= 125
o
C
25
o
C
0.1
-55
o
C
0.01
0.001
4
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
3
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDN339AN Rev.
C
Typical Characteristics
(continued)
5
1000
800
600
400
200
0
V
DS
= 5V
f = 1MHz
GS
= 0 V
I
D
= 3A
V
10V
4
15V
C
ISS
3
2
1
0
C
OSS
C
RSS
0
2
4
6
8
10
0
4
8
12
16
20
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
20
16
12
8
SINGLE PULSE
R
θ
JA
=270
o
C/W
T
A
=25
o
C
R
DS(ON)
LIMIT
1ms
10ms
100ms
1
1s
10s
DC
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 270
o
C/W
TA = 25
o
C
0.1
0.01
4
0
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
0.2
0.2
R
(t) = r(t)
* R
JA
θ
JA
θ
0.1
R
= 270
°
C/W
JA
θ
0.1
0.05
0.05
0.02
P(pk)
0.02
0.01
0.01
t
1
Single Pulse
t
2
0.005
T –
T =
P *
R
(t)
JA
J
A
θ
Duty Cycle, D = t
1
/
t
2
0.002
0.001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDN339AN Rev.
C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E
2
CMOS
TM
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
VCX™
QS™
FACT Quiet Series™
FAST
FASTr™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. E
