onsemi-FDN340P
| Part # | onsemi-FDN340P |
Download  | onsemi-FDN340P |
February 2007
FDN340P
Single P-Channel, Logic Level, PowerTrench
MOSFET
General Description
Features
This
P
–
Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
•
–2A, 20 V
R
DS(ON)
= 70 m
Ω
@ V
GS
= –4.5 V
R
DS(ON)
= 110 m
Ω
@ V
GS
= –2.5 V
•
Low gate charge (7.2 nC typical).
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
•
High performance trench technology for extremely
low R
DS(ON)
.
•
High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling c
a
pability.
D
G
S
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Sym bol
Param eter
Ratings
Units
V
DSS
Drain-Source Voltage
–20
V
V
GSS
I
D
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
±
8
–2
–10
V
A
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
0.5
0.46
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
°
C/W
°
C/W
R
θ
JA
R
θ
J
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
340
FDN340P
7’’
8mm
3000 units
200
7
Fairchild Semiconductor Corporation
FDN340P Rev E
1
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= –250
µ
A
–20
V
Breakdown Voltage Temperature
∆
BV
DSS
∆
T
J
I
D
= –250
µ
A,Referenced to 25
°
C
–12
mV
/
°
C
µ
A
Coefficient
V
DS
= –16 V,
V
GS
= 0 V
V
DS
= –16 V,
V
GS
= 0 V
,
T
J
=55
°
C
–1
–10
100
–100
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
I
GSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
GS
= 8 V,
V
GS
= –8 V,
V
DS
= 0 V
V
DS
= 0 V
nA
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
G
S
,
I
D
= –250
µ
A
I
D
= –250
µ
A,Referenced to 25
°
C
–0.4
–5
–0.8
3
–1.5
V
Gate Threshold Voltage
Temperature Coefficient
∆
V
GS(th)
∆
T
J
mV
/
°
C
m
Ω
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –4.5 V,
I
D
= –2 A
60
77
82
70
120
110
V
GS
= –4.5 V,
I
D
= –2 A,T
J
=125
°
C
V
G
S
= –2.5 V,
I
D
= –1.7A,
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
GS
= –4.5 V,
V
DS
= –5 V
A
S
V
DS
= –4.5 V,
I
D
= –2 A
9
Dynamic Characteristics
600
175
80
Input Capacitance
779
121
56
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
10
9
20
10
43
20
10
ns
ns
ns
27
11
7.2
1.7
1.5
ns
Q
g
Q
gs
Q
gd
V
DS
= –10V,
V
GS
= –4.5 V
I
D
= –3.5 A,
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forw
a
r
d
–0.42
–1.2
A
V
V
SD
V
GS
= 0 V,
I
S
= –0.42 A
(Note 2)
–0.7
Voltage
Notes:
1.
R
θ
J
A
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
θ
J
C
is guaranteed by design while R
θ
C
A
is determined by the user’s board design.
a. 250°C/W when mounted on a
b. 270°C/W when mounted on a
2
2
0.02in pad
of 2 oz copper
.001 in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
FDN340P Rev E
1
Typical Characteristics
15
2
1.8
1.6
1.4
1.2
1
V
GS
= -4.5V
-3.0V
-3.5V
-2.5V
V
V
GS
=-2.0V
12
9
-2.0V
-2.5V
6
-3.0V
-3.5V
3
-4.5V
-1.5V
0
0.8
0
1
2
3
4
0
3
6
9
12
15
–
V
D
S
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.3
0.22
I
D
= -1A
I
D
= -2A
V
GS
= -4.5V
0.18
0.14
0.1
1.2
1.1
1
T
A
= 125
o
C
T
A
= 2
5
o
C
0.9
0.8
0.7
0.06
0.02
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
T
J
, JUNCTION TEMPERATURE (
o
C)
–
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
10
V
D
S
= -5V
V
GS
= 0V
T
A
= -55
o
C
25
o
C
125
o
C
1
T
A
= 125
o
C
6
0.1
25
o
C
4
0.01
-5
5
o
C
2
0.001
0
0.0001
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
–
V
GS
, GATE TO SOURCE VOLTAGE (V)
–
V
S
D
, BODY DIODE FORW
ARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN340P Rev E
1
Typical Characteristics
5
1000
800
600
400
200
0
f = 1 MHz
V
GS
= 0 V
I
D
= -3.5A
V
D
S
= -5V
-10V
C
ISS
4
3
2
1
0
-15V
C
OSS
C
RSS
0
1
2
3
4
5
6
7
8
9
0
5
10
15
20
Q
g
, GATE CHARGE (nC)
–
V
D
S
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
100
10
SINGLE PULSE
R
= 270° C/W
θ
JA
R
DS(ON)
LIMIT
100
µ
s
1ms
10ms
T
= 25°C
A
100ms
1
1s
DC
V
GS
= -10V
SINGLE PULSE
0.1
0.01
R
θ
JA
= 270
o
C/W
T
A
= 25
o
C
0.001
0.01
0.1
1
10
100
0.1
1
10
100
SINGLE PULSE TIME (SEC)
–
V
D
S
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
0.2
0.2
R
JA
(t) = r(t)
* R
JA
θ
θ
0.1
R
= 270 °C/W
JA
θ
0.1
0.05
0.05
0.02
P(pk)
0.01
0.02
t
1
Single Pulse
0.01
t
2
0.005
T
J
– T
= P
* R
(t)
θ
JA
A
Duty Cycle, D = t
/t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN340P Rev E
1
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S em ic onduc tor
owns or is authoriz
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S EM IC O N D U C TO R
R ES ER V ES
TH E
R IG H T
TO M
A K E
C H A N G ES
W ITH O U T
F U R TH ER
N O TIC E
TO A
N Y
P R O D U C TS
H ER EIN
TO IM
P R O V E
R EL IA B IL ITY ,
F U N C TIO N
O R
D ES IG N .
F A IR C H IL D
D O ES
N O T
A S S U M E
A N Y
L IA B IL ITY
A R IS IN G
O U T
O F
TH E
A P P L IC A TIO N
O R
U S E O F
A N Y
P R O D U C T
O R
C IR C U IT
D ES C R IB ED
H ER EIN ;
N EITH ER
D O ES
IT C
O N V EY
A N Y
L IC EN S E
U N D ER
ITS
P A TEN T
R IG H TS ,
N O R
TH E
R IG H TS
O F
O TH ER S .
TH ES E
S P EC IF IC A TIO N S
D O
N O T
EX P A N D
TH E
TER M S
O F
F A IR C H IL D ’S
W O R L D W ID E
TER M S
A N D C O N D ITIO N S ,
S P EC IF IC A L L Y
TH E
W A R R A N TY
TH ER EIN ,
W H IC H
C O V ER S
TH ES E P R O D U C TS .
L IF E
SU P P O RT
P O L IC Y
F A IR C H IL D ’S
P R O D U C TS
A R E
N O T
A U TH O R IZ ED
F O R
U S E
A S C R ITIC A L
C O M P O N EN TS
IN L
IF E
S U P P O R T
D EV IC ES
O R
S Y S TEM S
W ITH O U T
TH E
EX P R ES S
W R ITTEN
A P P R O V A L
O F
F A IR C H IL D
S EM IC O N D U C TO R
C O R P O R A TIO N .
A s
used herein:
1 .
L ife
sup p ort
dev ic es
or sy
stem s
are dev
ic es
or sy
stem s
whic h,
(a) are intended for surgic
al im
p lant
into the b
ody ,
or
(b ) sup
p ort
or sustain life, or (c
) whose failure to p
erform
when p
rop erly
used in ac
c ordanc e
with instruc
tions for use
p rov ided
in the lab
eling, c
an b
e reasonab
ly ex
p ec ted
to
result in signific
ant injury to the user.
ꢀ
2. A c
ritic al
c om p onent
is any c
om p onent
of a life sup
p ort
dev ic e
or sy
stem whose failure to p
erform c
an b
e
reasonab ly
ex p ec ted
to c
ause the failure of the life sup
p ort
dev ic e
or sy
stem ,
or to affec
t its safety or effec
tiv eness.
ꢀ
P RO DU C T
STATU S
DEF IN ITIO N S
De fin itio n
o f
Te rm s
Da ta s h e e t
Id e n tific a tio n
P ro d u c t
Sta tu s
De fin itio n
A dv anc e
Inform ation
F orm ativ e or
In
D esign
This datasheet c
ontains the design sp
ec ific ations
for
p roduc t
dev elop m ent.
S p ec ific ations
m ay
c hange
in
any m
anner without notic
e.
P relim inary
F irst P roduc tion
This datasheet c
ontains p
relim inary
data, and
sup p lem entary
data will b
e p
ub lished
at a later date.
F airc hild
S em ic onduc tor
reserv es
the right to m
ak e
c hanges
at any tim
e without notic
e in order to im
p rov e
design.
N o
Identific ation
N eeded
O b solete
F ull P roduc tion
This datasheet c
ontains final sp
ec ific ations.
F airc hild
S em ic onduc tor
reserv es the right to m
ak e
c hanges
at
any tim
e without notic
e in order to im
p rov e design.
ꢀ
N ot
In P
roduc tion
This datasheet c
ontains sp
ec ific ations
on a p
roduc t
that has b
een disc
ontinued b
y F
airc hild sem ic onduc tor.
The datasheet is p
rinted for referenc
e inform
ation only
.
R ev .
I22
