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August 2005
FDN352AP
Single P-Channel, PowerTrench
®
MOSFET
Features
General Description
■
–1.3 A, –30V
R
R
= 180 m
Ω
@ V
= –10V
This P-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor advanced Power
T
r
ench process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching perfor-
mance.
DS(ON)
DS(ON)
GS
–1.1 A, –30V
= 300 m
Ω
@ V
= –4.5V
GS
■
High performance trench technology for extremely low
R
.
DS(ON)
■
High power version of industry Standard SO
T
–
23 package.
Identical pin-out to SO
T
–
23 with 30% higher power handling
capabilit
y
.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss is needed in a
very small outline surface mount package.
Applications
■
Notebook computer power management
D
D
S
G
S
G
SuperSOT™-3
Absolute Maximum Ratings
T =
25°C unless otherwise noted
A
Symbol
Parameter
Ratings
Units
V
Drain-Source Voltage
Gate-Source Voltage
–30
25
V
V
A
DSS
V
GSS
I
Drain Current
– Continuous
– Pulsed
(Note 1a)
–1.3
D
–10
P
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
0.5
W
°
C
D
0.46
T , T
Operating and Storage Junction
T
e
mperature Range
–55 to +150
J
STG
Thermal Characteristics
R
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°
C/W
θ
JA
θ
JC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
52AP
FDN352AP
7’’
8mm
3000 units
©2005 Fairchild Semiconductor Corporation
FDN352AP Rev. C1
1
Electrical Characteristics
T =
25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
V
I
= 0
V
, I
=
–
250
µ
A
–30
V
DSS
GS
D
∆
BV
DSS
Breakdown Voltage
T
e
mperature Coefficient
= –250
µ
A, Referenced to 25
°
C
–17
mV/
°
C
D
∆
T
J
I
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
V
= –24
V
, V
= 0 V
–1
µ
A
DSS
DS
GS
I
=
25
V
, V
= 0 V
100
nA
GSS
GS
DS
On Characteristics
(Note 2)
Gate Threshold Voltage
V
V
I
= V
, I
= –250
µ
A
–0.8
–2.0
4
–2.5
V
GS(th)
DS
GS
D
∆
V
GS(th)
Gate Threshold Voltage
T
e
mperature Coefficient
= –250
µ
A, Referenced to 25
°
C
mV/
°
C
D
∆
T
J
R
Static Drain–Source
On–Resistance
V
V
V
= –10
V
, I
=
–
1.3 A
150
250
330
180
300
400
m
Ω
DS(on)
GS
D
= –4.5
V
, I
=
–
1.1 A
GS
GS
D
= –4.5
V
, I
=
–
1.1 A, T
= 125
°
C
D
J
g
Forward
T
r
ansconductance
V
= –5
V
, I
=
–
0.9 A
2.0
S
FS
DS
D
Dynamic Characteristics
C
C
C
Input Capacitance
V
= –15
V
, V
= 0 V, f =
1
.0 MHz
150
40
pF
pF
pF
iss
DS
GS
Output Capacitance
oss
rss
Reverse
T
r
ansfer Capacitance
20
Switching Characteristics
(Note 2)
t
t
t
t
T
u
rn–On Delay Time
T
u
rn–On Rise Time
T
u
rn–Off Delay Time
T
u
rn–Off Fall Time
T
o
tal Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= –10
V
, I
=
–
1 A,
4
8
28
18
2
ns
ns
d(on)
DD
GS
D
= –10
V
, R
= 6
Ω
GEN
15
10
1
r
ns
d(off)
f
ns
Q
Q
Q
V
V
= –10
V
, I
=
–
0.9 A,
1.4
0.5
0.5
1.9
nC
nC
nC
g
DS
GS
D
= –4.5 V
gs
gd
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
I
–0.42
–1.2
A
V
S
V
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
= 0
V
, I
=
–
0.42 A
(Note 2)
–0.8
17
7
SD
GS
S
t
I
= –3.9 A,
F
ns
nC
rr
dI /dt
= 100 A/µs
F
Q
rr
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user’s board design.
(a) R
θ
JA
= 250°C/W when mounted on a 0.02 in
2
pad of 2oz. copper.
(b) R
θ
JA
= 270°C/W when mounted on a 0.001 in
2
pad of 2oz. copper.
2. Pulse
T
e
st: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
2
FDN352AP Rev. C1
Typical Characteristics
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
GS
= -4.0V
V
GS
= -10V
8
-4.5V
-6.0V
6
-5.0V
-4.5V
-6.0V
4
-7.0V
-4.0V
-8.0V
-10V
2
0
-3.5V
4
-3.0V
0
1
2
3
5
0
2
4
6
8
10
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.4
I
D
= -0.45A
I
D
= -0.9A
V
GS
= -10V
1.2
1
T
A
= 12
5
o
C
T
A
= 2
5
o
C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
100
10
1
V
GS
= 0V
V
DS
= -5V
T
A
= -5
5
o
C
125
o
C
T
A
= 12
5
o
C
6
25
o
C
0.1
25
o
C
4
0.01
0.001
-55
o
C
2
0.0001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
2
3
4
5
6
7
8
-V
G
S
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY
DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
FDN352AP Rev. C1
Typical Characteristics
10
200
150
100
50
f = 1 MHz
GS
= 0 V
I
D
= -0.9A
V
8
V
DS
= -10V
-20V
C
iss
6
4
2
0
-15V
C
oss
C
rss
0
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
R
θ
JA
= 270
°
C/W
T
A
= 25
°
C
100
µ
s
R
DS(ON)
LIMIT
1ms
10ms
1
100ms
1s
10s
DC
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 270
o
C/W
T
A
= 25
o
C
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θ
JA
(t) = r(t) * R
θ
JA
0.2
R
θ
JA
= 270
°
C/W
0.1
0.01
0.1
0.05
P(pk)
0.02
0.01
t
1
t
2
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D =
t
1
/ t
2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
4
FDN352AP Rev. C1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
PowerSaver™
SuperSOT™-8
SyncFET™
TinyLogic
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT
™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
PowerTrench
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
QFET
QS™
TINYOPTO™
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µ
SerDes™
SILENT SWITCHER
SMART START™
SPM™
UltraFET
HiSeC™
I
2
C™
UniFET™
VCX™
Wire™
MSXPro™
OCX™
i-Lo
™
ImpliedDisconnect™
IntelliMAX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
FACT Quiet Series™
Stealth™
Across the board. Around the world.™
SuperFET™
SuperSOT™-3
SuperSOT™-6
The Power Franchise
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVE
S
T
HE RIGH
T
T
O MAKE CHANGES WITHOU
T
F
URTHER NOTIC
E
T
O
A
NY
PRODUCTS HEREI
N
T
O IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD DOES NO
T
A
SSUM
E
A
N
Y
L
IABILITY
ARISING OU
T
O
F
T
H
E
A
PPLICATION OR USE O
F
A
N
Y
P
RODUC
T
O
R CIRCUI
T
D
ESCRIBED HEREIN; NEITHER DOES IT
CONVE
Y
A
N
Y
L
ICENSE UNDER ITS PATEN
T
R
IGHTS, NO
R
T
HE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOU
T
T
HE EXPRESS WRITTE
N
A
PPROVA
L
O
F FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
5
FDN352AP Rev. C1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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