onsemi-FDP12N50NZ
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November 2013
FDP12N50NZ / FDPF12N50NZ
TM
N-Channel UniFET
II MOSFET
500 V, 11.5 A, 520 m
Features
Description
•
•
•
•
•
•
R
DS(on)
= 460 m
(Typ.) @ V
GS
= 10
V
,
I
D
= 5.75 A
Low Gate Charge (Typ. 23 nC )
Low C
rss
(Typ. 14 pF )
UniFET
TM
II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFE
T
,
a
nd also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
100% Avalanche Tested
ESD Improved Capability
RoHS Compliant
Applications
•
•
•
LCD/LED/PDP TV
Lighting
Uninterruptible Power Supply
D
G
G
D
S
G
D
TO-220F
TO-220
S
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
.
Symbol
V
DSS
V
GSS
Parameter
FDP12N50NZ FDPF12N50NZ
Unit
V
Drain to Source Voltage
Gate to Source Voltage
500
±25
V
– Continuous (T
C
= 25
o
C)
– Continuous (T
C
= 100
o
C)
– Pulsed
11.5
6.9
46
11.5*
6.9*
46*
I
D
Drain Current
Drain Current
A
I
DM
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
E
AS
I
AR
Single Pulsed Avalanche Energy
Avalanche Current
560
11.5
17
E
AR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
W
W/
o
C
o
C
4.5
(T
C
= 25
o
C)
– Derate above 25
o
C
170
42
P
D
Power Dissipation
1.37
0.33
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
-55 to +150
300
Maximum Lead
T
e
mperature for Soldering,
1/8” from Case for 5 Seconds
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Unit
FDP12N50NZ FDPF12N50NZ
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.73
62.5
3.0
o
C/W
62.5
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C1
1
Package Marking and Ordering Information
Device Marking
FDP12N50NZ
FDPF12N50NZ
Device
Package
TO-220
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
50 units
FDP12N50NZ
FDPF12N50NZ
TO-220F
Tube
N/A
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I
D
= 250
A, V
GS
= 0V, T
J
= 25
o
C
–
–
–
V
500
–
BV
DSS
Drain to Source Breakdown Voltage
BV
DSS
/
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
A, Referenced to 25
o
C
0.5
V/
o
C
V
DS
= 500V, V
GS
= 0V
–
–
–
–
–
–
1
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
A
A
V
DS
= 400V, T
C
= 125
o
C
10
V
GS
= ±25V, V
DS
= 0V
±10
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
V
GS
= 10V, I
D
= 5.75A
V
DS
= 20V, I
D
= 5.75A
3.0
–
5.0
0.52
–
V
S
Static Drain to Source On Resistance
Forward Transconductance
–
–
0.46
12
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
945
155
14
1235
205
20
30
–
pF
pF
pF
nC
nC
nC
V
DS
= 25V, V
GS
= 0V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
23
V
V
DS
= 400V, I
D
= 11.5A
GS
= 10V
Q
gs
Q
gd
5.5
9.6
(Note 4)
–
–
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
–
–
–
–
20
50
60
45
50
ns
ns
ns
ns
V
R
DD
= 250V, I
D
= 11.5A
G
= 25
110
130
100
(Note 4)
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
11.5
46
1.4
–
A
A
I
SM
V
SD
t
rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0V, I
SD
= 11.5A
–
V
315
2.0
ns
C
V
GS
= 0V, I
SD
= 11.5A
dI
F
/dt = 100A/
s
Q
rr
Reverse Recovery Charge
–
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 8.5mH, I
= 11.5A, V
= 50V, R
= 25
, Starting T
= 25
C
AS
DD
G
J
3. I
11.5A, di/dt
200A/
s, V
BV
, Starting T
= 25
C
SD
DD
DSS
J
4. Essentially Independent of Operating
T
e
mperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C1
2
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
50
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
10
10
6.5V
6.0 V
5.5 V
150
o
C
25
o
C
1
1
-55
o
C
*Notes:
1. 250
s Pulse Test
2. T
C
= 25
o
C
*Notes:
1. V
DS
= 20V
2. 250
s Pulse Test
0.1
0.1
0.1
1
10
20
3
4
5
6
7
8
9
10
V
DS
, Drain-Source Voltage[V]
V
GS
, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
100
150
o
C
10
25
o
C
V
GS
= 10V
*Notes:
1. V
GS
= 0V
V
GS
= 20V
*Note: T
C
= 25
o
C
2. 250
s Pulse Test
1
0.4
0
6
12
18
24
30
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
2500
C
C
C
= C
+ C
(
C =
shorted
)
gs gd
ds
iss
= C
+ C
ds gd
oss
rss
= C
gd
V
DS
= 100V
8
2000
1500
1000
500
0
V
DS
= 250V
*Note:
1. V
GS
= 0V
V
DS
= 400V
2. f = 1MHz
6
4
2
0
C
iss
C
oss
C
rss
*Note: I
D
= 11.5A
15 20
0.1
1
10
30
0
5
10
25
V
DS
, Drain-Source Voltage [V]
Q
g
, Total Gate Charge [nC]
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C1
3
Typical Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.8
2.4
2.0
1.6
1.2
1.20
1.15
1.10
1.05
1.00
0.95
*Notes:
1. V
GS
= 0V
*Notes:
1. V
GS
= 10V
2. I
D
= 5.75A
0.8
0.90
0.85
2. I
D
= 250uA
0.4
-75 -50
0
50
100
150
-100
-50
0
50
100
150
o
o
T
J
, Junction Temperature
[
C
]
T
J
, Junction Temperature
[
C
]
F i g u r e
9 .
M a x i m u m
S a f e
O p e r a t i n g
A r e a
– FDPF12N50NZ
F i g u r e
1 0 . M a x i m u m
S a f e
O p e r a t i n g
A r e a
– FDP12N50NZ
100
100
30
s
100
s
10
s
100
s
10
10
1ms
1ms
10ms
10ms
100 ms
DC
DC
1
1
Operation in This Area
Operation in This Area
is Limited by R
DS(on)
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
0.1
* Notes :
0.1
1. T
C
= 25
o
C
2. T
J
= 150
o
C
2. T
J
= 150
o
C
3. Single Pulse
3. Single Pulse
0.01
0.01
1
10
100
1000
1
10
100
1000
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 11. Maximum
Drain Current vs.
Case Temperature
12
10
8
6
4
2
0
25
50
75
100
125
150
o
T
C
,
C
ase Temperature
[
C
]
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C1
4
Typical Characteristics
(Continued)
Figure 12. Transient Thermal Response Curve
– FDP12N50NZ
5
1
0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
* Notes :
1. Z
JC
(t) = 0.73
o
C/W Max.
Single pulse
0.01
2. Duty Factor, D=t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
JC
(t)
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
t
1
, Square Wave Pulse Duration [sec]
Figure 13. Transient Thermal Response Curve
– FDPF12N50NZ
5
D=0.5
1
0.2
P
DM
0.1
t
1
0.05
10
-1
10
-2
t
2
0.02
0.01
*Notes:
1. Z
JC
(t) = 3.0
o
C/W Max.
2. Duty Factor, D = t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
JC
(t)
single pulse
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
t
t
1
, Square Wave Pulse Duration [sec]
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C1
5
Figure 14. Gate Charge Test Circuit & Waveform
I
= const.
G
Figure 15. Resistive Switching Test Circuit & Waveforms
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
V
GS
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C1
6
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C1
7
Mechanical Dimensions
TO-220 3L
Figure 18. TO-220, Molded, 3Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
Dimension in Millimeters
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C1
8
Mechanical Dimensions
TO-220F 3L
Figure 19. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
Dimension in Millimeters
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C1
9
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power Resource
SM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
G
max
™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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support devices or systems are devices or systems which, (a) are
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A
critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C1
10
