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October 2013
FDP3651U
N-Channel PowerTrench
MOSFET
1
0
0
V,
80
A,
18
m
Ω
®
Features
Applications
R
DS(on)
=
1
5
m
Ω
( Typ.) @ V
GS
= 10 V, I
D
=
80
A
High Performance Trench Technology for Extremely
Low R
DS(on)
•
•
•
•
•
•
•
Consumer Appliances
Synchronous Rectification
Battery Protection Circui
t
•
Low Miller Charge
Motor drives and Uninterruptible Power Supplie
s
•
UIS Capability (Single Pulse and Repetitive Pulse)
Micro Solar Inverter
D
G
D
S
G
TO-220
S
MOSFET Maximum Ratings
T =
25°C unless otherwise noted
C
Symbol
V
DSS
V
GSS
Parameter
FDP3651U
100
Unit
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
– Continuous
– Pulsed
±20
V
80
I
D
A
(Note 1)
(Note 2)
3
20
P
D
Power Dissipation
255
W
mJ
°
C
E
AS
Single Pulsed Avalanche Energy
266
T
J
, T
STG
Operating and Storage
T
e
mperature
-55 to 175
Maximum lead temperature soldering purposes,
1/8” from case for 5 seconds
T
L
300
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance , Junction to Ambient, Max.
Thermal Resistance , Junction to Case, Max.
62
°
C/W
°
C/W
0.59
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
N/A
Quantity
50 units
FDP3651U
FDP3651U
Tube
1
©2006
Fairchild Semiconductor Corporation
FDP3651U
Rev. C1
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
µ
A, V
GS
= 0V
100
–
–
–
–
–
V
–
–
–
1
µ
A
µ
A
nA
V
DS
= 80V
I
DSS
V
GS
= 0V
T
C
=150
°
C
250
±100
I
GSS
V
GS
= ±20V
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= -250
µ
A
GS
= 10V , I
D
= 80A
3.5
4.5
15
13
32
5.5
18
15
37
V
V
–
–
–
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V , I
D
= 40A
V
GS
=10
V
,
I
D
=40A,T
J
=175
o
C
m
Ω
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
4152
485
89
5522
728
118
69
pF
pF
pF
nC
nC
nC
nC
V
DS
= 25V,V
GS
= 0V
f=1MHz
C
oss
C
rss
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
Q
g(TOT)
Q
g(TH)
Q
gs
V
GS
= 0V to 10V
49
V
DD
= 50V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
V
GS
= 0V to 2V
7
9.8
–
I
D
= 80A
23
Q
gd
16
–
Resistive Switching Characteristics
t
(on)
t
d(on)
t
r
Turn-On Time
Turn-On Delay Time
Rise Time
–
–
–
–
–
–
–
64
27
29
52
26
78
ns
ns
ns
ns
ns
ns
15
16
32
14
–
V
V
DD
= 50
V
, I
D
= 80A
GS
= 10V, R
GS
= 5.0
Ω
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
t
(off)
Turn-Off Time
Drain-Source Diode Characteristics
I
SD
= 80A
–
–
–
–
0.99
0.88
70
1.25
1.0
V
V
V
SD
Source to Drain Diode
Forward Voltage
I
SD
= 40A
t
rr
Reverse Recovery Time
105
303
ns
nC
I
s
= 40 A, di/dt = 100A/
µ
s
Q
rr
Reverse Recovery Charge
202
Notes:
1.
Repetitive Rating : Pulse width limited by maximum junction temperature
o
2. L=0.13mH, I
= 64A,
V =50
V
,
R
=
25
Ω
, Starting T =25 C
AS
DD
G
J
2
©2006
Fairchild Semiconductor Corporation
FDP3651U
Rev. C1
Typical Characteristics
T
= 25°C unless otherwise noted
C
5
4
3
2
1
0
120
100
80
60
40
20
0
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 7V
V
GS
= 20V
V
GS
= 10V
V
GS
= 8V
V
GS
= 8V
V
GS
= 10V
V
GS
= 20V
V
GS
= 7V
0
20
40
60
80
100
120
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT(A)
Figure 1.
On Region Characteristics
Figure 2.
Normalized On-Resistance vs Drain
Current and Gate Voltage
2.8
60
I
D
= 80A
I
D
= 80A
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 10V
2.4
2.0
1.6
1.2
0.8
0.4
50
40
T
J
= 175
o
C
30
20
T
J
= 25
o
C
10
0
-80
-40
0
40
80
120
160
200
8
10
12
14
16
18
20
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3.
Normalized On Resistance vs Junction
Temperature
Figure 4.
On-Resistance vs Gate to Source
Voltage
1000
120
V
GS
= 0V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
100
100
T
J
= 175
o
C
10
80
T
J
= 175
o
C
1
60
T
J
= 25
o
C
0.1
0.01
40
20
0
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= -55
o
C
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figure 6.
Source to Drain
Diode Forward
Voltage vs Source Current
3
©2006
Fairchild Semiconductor Corporation
FDP3651U
Rev. C1
Typical Characteristics
T
= 25°C unless otherwise noted
C
10000
1000
100
10
8
C
iss
V
DD
= 45V
V
DD
= 50V
V
DD
= 55V
C
oss
6
C
rss
4
2
f = 1MHz
V
GS
= 0V
10
0.1
0
1
10
100
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE(nC)
Figure 7.
Gate Charge Characteristics
Figure 8.
Capacitance vs Drain to Source Voltage
100
100
PACKAGE MAY LIMIT
CURRENT IN THIS REGION
80
V =10V
GS
60
40
20
0
T
J
= 25
o
C
10
V
=8V
GS
T
J
= 150
o
C
1
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
25
50
75
100
125
150
175
TC, CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE(ms)
Figure 9.
Unclamped Inductive Switching
Capability
Figure 10.
Maximum Continuous Drain Current vs
Ambient Temperature
10
5
500
o
T
= 25
C
10us
C
V
GS
= 10V
FOR TEMPERATURES
100
10
1
o
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
10
4
10
3
10
2
175
–
T
OPERATION IN THIS
AREA MAY BE
LIMITED BY R
DS(ON)
c
I = I
25
———————-
100us
150
1ms
SINGLE PULSE
10ms
DC
SINGLE PULSE
T
J
=MAX RATED
T
c
=
25
o
C
0.1
10
-5
10
-4
10
-3
t, PULSE WIDTH (s)
10
-2
10
-1
10
0
10
1
200
100
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe Operating Area
Figure 12.
Single Pulse Maximum Power
Dissipation
4
©2006
Fairchild Semiconductor Corporation
FDP3651U
Rev. C1
Typical Characteristics
T
= 25°C unless otherwise noted
C
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
1
SINGLE PULSE
0.01
t
2
NOTES:
DUTY FACTOR: D = t
/t
1
2
PEAK T
= P
x Z
x R
+ T
θ
Jc
θ
Jc
c
J
DM
1E-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION(s)
Figure 13.
Transient Thermal Response Curve
5
©2006
Fairchild Semiconductor Corporation
FDP3651U
Rev. C1
Mechanical Dimensions
TO-220 3L
Figure
14
.
TO-220, Molded, 3Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
Dimension in Millimeters
©2006
Fairchild Semiconductor Corporation
FDP3651U
Rev. C1
6
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Product Status
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
7
©2006
Fairchild Semiconductor Corporation
FDP3651U
Rev. C1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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