onsemi-FDP79N15
| Part # | onsemi-FDP79N15 |
Download  | onsemi-FDP79N15 |
April 2007
TM
UniFET
FDP79N15 / FDPF79N15
150V N-Channel MOSFET
Features
Description
•
•
•
•
•
79A, 150V, R
DS(on)
= 0.03
Ω
@V
GS
= 10 V
Low gate charge ( typical 56 nC)
Low Crss ( typical
96pF)
Fast switching
Improved dv/dt capability
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
TO-220F
FDPF Series
TO-220
FDP Series
G D
S
G
D S
S
Absolute Maximum Ratings
Symbol
Parameter
FDP79N15 FDPF79N15
Unit
V
DSS
Drain-Source Voltage
Drain Current
150
V
I
D
– Continuous (T
C
= 25
°
C)
– Continuous (T
C
= 100
°
C)
79
50
79*
50*
A
A
(Note 1)
I
DM
Drain Current
– Pulsed
A
316
316*
V
GSS
E
AS
I
AR
Gate-Source voltage
±
30
1669
79
V
mJ
A
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
E
AR
dv/dt
P
D
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
46.3
4.5
mJ
V/ns
Power Dissipation
(T
C
= 25
°
C)
– Derate above 25
°
C
463
3.7
38
0.3
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage
T
e
mperature Range
-55 to +150
300
°
C
Maximum Lead
T
e
mperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP79N15 FDPF79N15
Unit
°
C/W
°
C/W
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
0.27
0.5
3.3
—
R
θ
CS
R
θ
JA
62.5
62.5
©2007 Fairchild Semiconductor Corporation
FDP79N15 / FDPF79N15 Rev. B
1
Package Marking and Ordering Information
Device Marking
FDP79N15
Device
FDP79N15
FDPF79N15
Package
TO-220
Reel Size
Tape Width
Quantity
–
–
–
–
50
50
FDPF79N15
TO-220F
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min
Typ Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0
V
,
I
D
= 250
μ
A, T
J
= 25
°
C
I
D
= 250
μ
A, Referenced to 25
°
C
150
—
—
—
—
V
Δ
BV
DSS
Breakdown Voltage
T
e
mperature
Coefficient
0.15
V/
°
C
/
Δ
T
J
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 150
V
,
V
GS
= 0V
V
DS
= 120
V
,
T
C
= 125
°
C
—
—
—
—
1
10
μ
A
μ
A
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 30
V
,
V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
—
—
—
—
100
nA
nA
-100
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10
V
,
I
D
= 39.5A
V
DS
= 40
V
,
I
D
= 39.5A
3.0
—
—
0.025
46
5.0
0.03
—
V
Ω
S
Static Drain-Source
On-Resistance
(Note 4)
g
FS
Forward Transconductance
—
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
V
DS
= 25
V
,
V
GS
= 0V,
f = 1.0MHz
—
—
—
2620
730
96
3410
950
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
140
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
t
d(off)
t
f
V
DD
= 75
V
, I
D
= 79A
R
G
= 25
Ω
—
—
—
—
—
—
—
50
200
55
112
410
120
85
73
—
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
38
ns
Q
g
V
DS
= 120
V
,
I
D
= 79A
V
GS
= 10V
56
nC
nC
nC
Q
gs
Q
gd
18
21
—
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
—
—
—
—
—
—
—
79
316
1.4
—
A
A
I
SM
V
SD
t
rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0
V
,
I
S
= 79A
—
V
V
GS
= 0
V
,
I
S
= 79A
136
2.1
ns
μ
C
dI
F
/dt =100A/
μ
s
(Note 4)
Q
rr
Reverse Recovery Charge
—
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.357mH, I
= 79A, V
= 50V, R
= 25
Ω
, Starting T
= 25
°
C
AS
DD
G
J
3. I
≤
79A, di/dt
≤
200A/
μ
s, V
≤
BV
, Starting T
= 25
°
C
SD
DD
DSS
J
4. Pulse
T
e
st: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5. Essentially Independent of Operating
T
e
mperature Typical Characteristics
2
FDP79N15 / FDPF79N15 Rev. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
10
2
10
2
10
1
10
0
Bottom :
5.5 V
150
o
C
25
o
C
10
1
-55
o
C
* Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
* Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
10
0
10
-1
10
0
10
1
2
4
6
8
10
12
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.07
0.06
10
2
0.05
V
GS
= 10V
150
o
C
10
1
0.04
25
o
C
V
GS
= 20V
0.03
0.02
* Notes :
1. V
GS
= 0V
* Note : T
J
= 25
o
C
175
2. 250
μ
s Pulse Test
10
0
0.2
0
25
50
75
100
125
150
200
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
V
DS
= 30V
C
oss
10
C
rss
= C
gd
5000
4000
3000
2000
1000
0
V
DS
= 75V
V
DS
= 120V
8
C
iss
6
4
2
* Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
* Note : I
D
= 79A
50
0
0
10
20
30
40
60
10
-1
10
0
10
1
Q
G
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
3
FDP79N15 / FDPF79N15 Rev. B
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
* Notes :
1. V
GS
= 0 V
0.9
0.8
* Notes :
1. V
GS
= 10 V
2. I
D
= 250
μ
A
2. I
D
= 34.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C]
Figure 9-1. Maximum Safe Operating Area
for FDP79N15
Figure 9-2. Maximum Safe Operating Area
for FDPF79N15
10
μ
s
100
μ
s
1 ms
10
μ
s
10
2
10
1
10
0
10
-1
10
-2
10
2
100
μ
s
10 ms
100 ms
1 ms
10 ms
10
1
DC
Operation in This Area
is Limited by R
DS(on)
100 ms
Operation in This Area
is Limited by R
DS(on)
DC
10
0
* Notes :
1. T
C
= 25
o
2. T
J
= 150
o
* Notes :
C
10
-1
10
-2
1. T
C
= 25
o
2. T
J
= 150
o
C
C
C
3. Single Pulse
3. Single Pulse
10
0
10
1
10
2
10
0
10
1
10
2
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T
C
, Case Temperature [
o
C]
4
FDP79N15 / FDPF79N15 Rev. B
Typical Performance Characteristics
(Continued)
Figure 11-1. Transient Thermal Response Curve for FDP79N15
D=0.5
0.2
10
-1
0.1
P
DM
t
1
0.05
t
2
10
-2
* Notes :
0.02
0.01
1. Z
θ
JC
(t) = 0.27
0
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
single pulse
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, Square Wave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF79N15
D=0.5
10
0
0.2
0.1
P
DM
0.05
t
1
10
-1
t
2
0.02
* Notes :
1. Z
θ
JC
(t) = 3.3
0
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
0.01
single pulse
10
-3
10
-2
10
-5
10
-4
10
-2
10
-1
10
0
10
1
t
1
, Square Wave Pulse Duration [sec]
5
FDP79N15 / FDPF79N15 Rev. B
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
FDP79N15 / FDPF79N15 Rev. B
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
FDP79N15 / FDPF79N15 Rev. B
Mechanical Dimensions
TO-220
4.50
±
0.20
9.90
±
0.20
(8.70)
+0.10
–0.05
1.30
ø3.60
±
0.10
1.27
±
0.10
1.52
±
0.10
0.80
±
0.10
+0.10
–0.05
0.50
2.40
±
0.20
2.54TYP
2.54TYP
[2.54
±
0.20
]
[2.54
±
0.20
]
10.00
±
0.20
Dimensions in Millimeters
8
FDP79N15 / FDPF79N15 Rev. B
Mechanical Dimensions
(Continued)
TO-220F
2.54
±
0.20
10.16
±
0.20
ø3.18
±
0.10
(7.00)
(0.70)
(1.00×45
°
)
MAX1.47
0.80
±
0.10
#1
0.35
±
0.10
+0.10
–0.05
0.50
2.76
±
0.20
2.54TYP
2.54TYP
[2.54
±
0.20
]
[2.54
±
0.20
]
9.40
±
0.20
Dimensions in Millimeters
9
FDP79N15 / FDPF79N15 Rev. B
tm
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
®
ACEx
HiSeC™
i-Lo
™
PowerSaver™
PowerTrench
TinyBoost™
TinyBuck™
TinyLogic
TINYOPTO™
TinyPower™
TinyWire™
®
Across the board. Around the world.™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT
™
CTL™
Current Transfer Logic™
DOME™
E CMOS™
®
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
MICROCOUPLER™
MicroPak™
MICROWIRE™
Motion-SPM™
MSX™
Programmable Active Droop™
®
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
ScalarPump™
SMART START™
TruTranslation™
µSerDes™
®
UHC
UniFET™
VCX™
Wire™
2
MSXPro™
OCX™
®
®
EcoSPARK
SPM
EnSigna™
OCXPro™
OPTOLOGIC
OPTOPLANAR
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
®
FACT Quiet Series™
®
®
FACT
FAST
®
PACMAN™
PDP-SPM™
POP™
FASTr™
FPS™
®
®
FRFET
Power220
Power247
®
®
GlobalOptoisolator™
GTO™
The Power Franchise
TM
PowerEdge™
tm
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b) support
or sustain life, and (c) whose failure to perform when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
Full Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice
to improve design.
No Identification Needed
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been dis-
continued by Fairchild Semiconductor.The datasheet is printed for refer-
ence information only.
Rev. I25
10
FDP79N15 / FDPF79N15 Rev. B
