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April 2013
FDP8440
N-Channel PowerTrench
MOSFET
®
40 V, 277 A, 2.2 m
Ω
Features
Applications
•
•
•
•
•
•
R
DS(on)
= 1.64 m
Ω (
Typ.)@ V
GS
= 10 V, I
D
= 80 A
Q
g(tot)
= 345 nC (Typ.)@ V
GS
= 10 V
Low Miller Charge
•
•
•
•
Power
T
o
ols
Motor Drives and Uninterruptible Power Supplies
Synchronous Rectification
Low Q
rr
Body Diode
Battery Protection Circuit
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
D
G
G
TO-220
D
S
S
o
T
= 25 C unless otherwise noted
MOSFET Maximum Ratings
C
Symbol
Parameter
FDP8440
Unit
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
40
V
V
±20
– Continuous (T
C
= 25
o
C, Silicon Limited)
– Continuous (T
C
= 100
o
C, Silicon Limited)
– Continuous (T
C
= 25
o
C, Package Limited)
277*
196*
100
I
D
A
I
DM
Drain Current
– Pulsed
(Note 1)
(Note 2)
500
1682
A
mJ
E
AS
Single Pulsed Avalanche Energy
(T
C
= 25
o
C)
– Derate above 25
o
C
306
W
P
D
Power Dissipation
2.04
W/
o
C
o
C
T
J,
T
STG
T
L
Operating and Storage
T
e
mperature Range
-55 to +175
Maximum Lead
T
e
mperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
o
C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A.
Thermal Characteristics
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink (Typ.)
Thermal Resistance, Junction to Ambient, Max.
0.49
0.5
o
C/W
o
C/W
o
C/W
62.5
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev.
C2
1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP8440
FDP8440
TO-220
N/A
N/A
50units
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
= 0
V
,
I
D
= 250
μ
A
DS
= 32V
40
—
—
—
—
1
V
V
μ
A
I
DSS
T
C
= 150
o
C
—
—
—
—
250
μ
A
V
GS
= 0
V
I
GSS
V
GS
= ±20V
±100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
1
—
—
—
3
V
V
V
GS
= 4.5
V
,
I
D
= 80A
GS
= 10
V
,
I
D
= 80A
1.88
1.64
2.4
2.2
R
DS(on)
Static Drain-Source On-Resistance
m
Ω
V
GS
= 10
V
,
I
D
= 80A,
T
C
= 175
o
C
—
3.00
4.4
Dynamic Characteristics
C
iss
Input Capacitance
—
—
—
—
—
—
—
—
—
18600
1840
1400
1.1
24740
2450
2100
—
pF
pF
pF
Ω
V
DS
= 25
V
,
V
GS
= 0V,
C
oss
C
rss
R
G
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 0.5
V
, f =
1
MHz
V
GS
= 0V to 10V
V
GS
= 0V to 2V
Q
g(tot)
Q
g(2)
Q
gs
T
o
tal Gate Charge at 10V
Threshold Gate Charge
Gate to Source
Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
345
32.5
49
450
—
nC
nC
nC
nC
nC
V
DD
= 20V
D
= 80A
I
g
= 1.0mA
I
—
Q
gs2
Q
gd
16.5
74
—
—
Switching Characteristics
(V =
10V)
GS
t
ON
t
d(on)
t
r
Turn-On Time
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
175
43
360
95
ns
ns
ns
ns
ns
ns
V
DD
= 20
V
,
I
D
= 80A
V
GS
= 10
V
,
R
GEN
= 7
Ω
130
435
290
730
275
875
590
1470
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics and Maximum Ratings
I
SD
= 80A
—
—
—
—
—
—
1.25
1.0
—
V
V
V
SD
Source to Drain Diode Voltage
I
SD
= 40A
t
rr
Reverse Recovery Time
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
59
77
ns
nC
Q
RR
Reverse Recovery Charge
—
NOTES:
1: Pulse width limited by maximum junction temperature.
2: Starting T
= 25
°
C, L = 1mH, I
= 58A, V
= 36
V
, V
=
1
0
V
.
J
AS
DD
GS
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev.
C2
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
400
400
100
100
V
GS
=
10.0 V
7.0 V
150
o
C
-55
o
C
5.0 V
10
3.5 V
3.0 V
2.5 V
10
25
o
C
* Notes :
1. 250
μ
s Pulse Test
* Notes :
1. V
DS
= 20V
1
2. T
C
= 25
o
C
2. 250
μ
s Pulse Test
0.4
0.04
1
0.1
1
0
2
4
6
V
DS
,Drain-Source Voltage[V]
V
GS
,Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.80
1000
1.75
1.70
1.65
1.6
V
GS
= 4.5V
100
150
o
C
25
o
C
10
V
GS
= 10V
Notes:
1. V
GS
= 0V
*Note: T
C
= 25
o
C
150 200 250
2. 250
μ
s Pulse Test
1
0
50
100
0.3
0.6
0.9
1.2
V
SD
, Body Diode Forward Voltage [V]
I
D
, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
30000
24000
18000
12000
6000
0
10
C
C
C
= C
+ C
(
C =
shorted
)
gs gd
ds
iss
V
DS
= 25V
V
DS
= 20V
V
DS
= 15V
= C
+ C
ds gd
= C
gd
oss
rss
8
6
4
2
0
C
iss
* Note:
1. V
GS
= 0V
2. f = 1MHz
C
oss
C
rss
* Note : I
D
= 80A
300
10
-1
10
0
V
DS
, Drain-Source Voltage [V]
10
1
20
0
100
200
400
Q
g
, Total Gate Charge [nC]
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev.
C2
3
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.9
0.5
* Notes :
1. V
GS
= 0V
* Notes :
1. V
GS
= 10V
2. I
D
= 250
μ
A
2. I
D
= 80A
0.8
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T
J
, Junction Temperature
[
o
C
]
T
J
, Junction Temperature
[
o
C
]
Figure 10. Safe Operating Area
Figure 9. Unclamped Inductive Switching
Capability
3000
1000
200
100
100
μ
s
T
J
= 25
o
C
100
10
1
T
J
= 150
o
C
10
1ms
Operation in This Area
is Limited by R
DS(on)
10ms
*Notes:
1. T
C
= 25
o
C
100ms
2. T
J
= 175
o
C
3. Single Pulse
0.1
1
0.01
1
10
V
DS
, Drain-Source Voltage [V]
0.1
1
10
100
1000 10000
t
AV
, TIME IN AVALANCHE(ms)
Figure 11. Transient Thermal Response Curve
1
0.1
0.5
0.2
0.1
P
DM
0.05
t
1
t
2
0.02
0.01
0.01
* Notes :
1. Z
θ
JC
(t) = 0.49
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
Single pulse
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
Rectangular Pulse Duration [sec]
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev.
C2
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev.
C2
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev.
C2
6
Mechanical Dimensions
TO-220B03
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev.
C2
7
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev.
C2
8
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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