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May 2007
FDP8447L
tm
N-Channel PowerTrench
®
MOSFET
40V, 50A, 8.7m
Ω
Features
General Description
Max r
DS(on)
= 8.7m
Ω
at V
GS
= 10V, I
D
= 14A
Max r
DS(on)
= 11.2m
Ω
at V
GS
= 4.5V, I
D
= 11A
Fast Switching
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench technology to deliver
low r
DS(on)
and optimized BV
DSS
capability to offer superior
performance benefit in the application.
RoHS Compliant
Applications
Inverter
Power Supplies
D
G
G
D
S
TO-220
FDP Series
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
40
V
V
±20
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
T
C
= 25°C
C
= 25°C
50
T
65
I
D
A
T
A
= 25°C
(Note 1)
(Note 3)
(Note 1)
12
-Pulsed
100
E
AS
Drain-Source Avalanche Energy
Power Dissipation
153
mJ
W
T
C
= 25°C
T
A
= 25°C
60
2
P
D
Power Dissipation
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.1
°C/W
(Note 1)
62.5
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tube
Tape Width
N/A
Quantity
FDP8447L
FDP8447L
TO-220AB
50units
1
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
µ
A, V
GS
= 0V
40
V
∆
BV
DSS
∆
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
µ
A, referenced to 25°C
34
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 32V,
1
µ
A
V
GS
= ±20V, V
DS
= 0V
±100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
µ
A
1
1.7
-6
3
V
∆
V
GS(th)
∆
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
µ
A, referenced to 25°C
mV/°C
V
GS
= 10V,
I
D
= 14A
7.7
8.9
12.1
74
8.7
11.2
13.7
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 4.5V,
I
D
= 11A
V
GS
= 10V,
I
D
= 14A, T
J
= 125°C
V
DD
= 5V,
I
D
= 14A
m
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
1880
245
150
1.4
2500
325
pF
pF
pF
Ω
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
225
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
9
7
18
14
45
10
49
27
ns
ns
V
DD
= 20
V
,
I
D
= 14A,
V
GS
= 10V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
28
4
ns
ns
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0V to 10V
35
19
4.7
6.2
nC
nC
nC
nC
V
DD
= 20V,
I
D
= 14A
Q
g
V
GS
= 0V to 5V
Q
gs
Q
gd
Drain-Source Diode Characteristics
V
SD
t
rr
Source to Drain Diode
Forward Voltage
Reverse Recovery Time
V
GS
= 0V, I
S
= 14A
(Note 2)
0.8
28
22
1.2
42
33
V
ns
nC
I
F
= 14A, di/dt = 100A/
µ
s
Q
rr
Reverse Recovery Charge
NOTES:
1
.
R
i
s
t
h
e
s
u
m
o
f
t
h
e
j
unction-to-cas
e
a
n
d
c
ase-to
–
a
mbient
therma
l
r
esistanc
e
w
her
e
t
h
e
c
as
e
t
herma
l
r
eferenc
e
i
s
d
efined a
s
t
he solder mounting surface of the drain pins.
θ
JA
θ
JC
R
is guaranteed by design
while R
is determined by the user’s board design.
θ
JA
2. Pulse Test: Pulse Width < 30
0
µ
s, Duty cycle < 2.0%.
3.
Starting T
= 25°C, L = 1mH, I
= 17.5A, V
= 40
V
, V
=
1
0V.
J
AS
DD
GS
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
2
Typical Characteristics
T
J
= 25°C unless otherwise noted
100
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 3V
V
GS
= 10V
80
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 4V
60
V
GS
= 3.5V
V
GS
= 4V
40
20
V
GS
= 4.5V
V
GS
= 10V
80
V
GS
= 3V
0
0
1
2
3
4
0
20
40
60
100
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT(A)
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
1.8
20
I
D
= 14A
GS
= 10V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
I
D
= 7A
V
1.6
1.4
1.2
1.0
0.8
0.6
16
12
8
T
J
= 125
o
C
T
J
= 25
o
C
4
-50 -25
0
25
50
75
100 125 150
2
4
6
8
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE
(
V
)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
100
100
V
GS
= 0V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
80
10
1
V
DS
= 5V
T
J
= 125
o
C
60
T
J
= 25
o
C
40
0.1
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 125
o
C
20
0
0.01
0.001
T
J
= -55
o
C
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
10
10000
1000
100
I
D
= 14A
V
DD
= 10V
C
iss
8
V
DD
= 20V
V
DD
= 30V
6
4
2
0
C
oss
C
rss
f = 1MHz
= 0V
V
GS
10
0.1
0
10
20
Q ,
GATE CHARGE(nC)
30
40
1
10
40
150
10
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
80
60
40
20
0
20
10
V
GS
= 10V
T
J
= 25
o
C
Limited by Package
V
GS
= 4.5V
T
J
= 125
o
C
R
θ
JC
= 2.1
o
C/W
1
0.01
0.1
1
10
100
300
25
50
75
100
125
T
C
,
CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE(ms)
Figur
e
9. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs
Case Temperature
1000
300
100
V
GS
= 10V
SINGLE PULSE
θ
JC
= 2.1
o
C/W
C
= 25
o
C
R
T
100us
10
1
THIS AREA IS
LIMITED BY r
DS(on)
1ms
SINGLE PULSE
T
J
= MAX RATED
R
θ
JC
= 2.1
o
C/W
10ms
100ms
100
50
T
C
= 25
o
C
0.1
0.1
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
1
10
100
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse
Maximum
Power Dissipation
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
0.1
NOTES:
DUTY FACTOR: D = t
/t
R
θ
JC
= 2.1
o
C/W
1
2
PEAK T
= P
x Z
x R
+ T
θ
JC
C
J
DM
θ
JC
0.05
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
Figure 13.
Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
5
tm
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx
®
Across the board. Around the world™
i-Lo
™
HiSeC
™
Power-SPM™
PowerTrench
®
TinyBuck™
TinyLogic
®
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CorePLUS™
CROSSVOLT
™
CTL™
ImpliedDisconnect™
Programmable Active Droop™
TINYOPTO™
IntelliMAX™
ISOPLANAR™
MICROCOUPLER™
MicroPak™
MICROWIRE™
Motion-SPM™
MSX™
MSXPro™
OCX™
OCXPro™
QFET
®
TinyPower™
TinyWire™
TruTranslation™
µSerDes™
UHC
®
UniFET™
VCX™
Wire™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
ScalarPump™
SMART START™
SPM
®
Current Transfer Logic™
DOME™
E
2
CMOS™
EcoSPARK
®
EnSigna™
STEALTH™
OPTOLOGIC
®
OPTOPLANAR
®
PACMAN™
PDP-SPM™
POP™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FACT Quiet Series™
FACT
®
FAST
®
FASTr™
FPS™
Power220
®
TCM™
FRFET
®
Power247
®
The Power Franchise
®
GlobalOptoisolator
™
PowerEdge™
PowerSaver™
™
tm
TinyBoost™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided in
the labeling, can be reasonably expected to result in a significant
injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Product Status
Datasheet Identification
Definition
Advance Information
This datasheet contains the design specifications for product
development. Specifications may change in any manner
without notice.
Formative or In Design
Preliminary
First Production
Full Production
This datasheet contains preliminary data; supplementary data will
be published at a later date. Fairchild Semiconductor reserves the
right to make changes at any time without notice to improve
design.
No Identification Needed
Obsolete
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at any time
without notice to improve design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor.The datasheet is printed
for reference information only.
Not In Production
Rev. I27
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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