onsemi-FDP8D5N10C

Part #	onsemi-FDP8D5N10C
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FDP8D5N10C / FDPF8D5N10C

N-Channel

Shielded Gate PowerTrench

MOSFET

100 V, 76 A, 8.5 m

Features

General Description

This N-Channel MV MOSFET is produced using ON

Semiconductor’s advanced PowerTrench

process that

incorporates Shielded Gate technology. This process has been

optimized to minimize on-state resistance and yet maintain

superior switching performance with best in class soft body

diode.

Max r

DS(on)

= 8.5 m

at V

= 10 V, I

= 76 A

Extremely Low Reverse Recovery Charge, Qrr

100% UIL

sted

RoHS Compliant

Applications

Synchronous Rectification for ATX / Server / Telecom PSU

Motor drives and Uninterruptible Power Supplies

Micro Solar Inverter

TO-220

TO-220F

MOSFET Maximum Ratings

= 25 °C unless otherwise noted.

Ratings

Symbol

Parameter

Units

FDP8D5N10C

FDPF8D5N10C

Drain to Source Voltage

Gate to Source Voltage

100

±20

100

±20

76*

Drain Current

-Continuous

= 25°C

(Note 3)

(Note 1)

(Note 2)

= 100°C

54*

-Pulsed

304

304*

Single Pulse Avalanche Energy

Power Dissipation

181

= 25°C

107

2.4

, T

STG

Operating and Storage Junction

mperature Range

-55 to +175

°C

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

FDP8D5N10C

FDPF8D5N10C

Units

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.4

4.2

°C/W

62.5

Package Marking and Ordering Information

Device Marking

FDP8D5N10C

FDPF8D5N10C

Device

Package

TO-220

Reel Size

Tape Width

Quantity

FDP8D5N10C

FDPF8D5N10C

–

50 units

TO-220F

Semiconductor Components Industries, LLC, 2017

May, 2017, Rev. 1.0

Publication Order Number:

FDP8D5N10C / FDPF8D5N10C/D

Electrical Characteristics

= 25 °C unless otherwise noted.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics

DSS

Drain to Source Breakdown Voltage

= 250

A, V

= 0 V

100

DSS

Breakdown Voltage

mperature

Coefficient

_{D
= 250
μ
A, referenced to 25 °C}

_{DS
= 80 V, V
GS
= 0 V}

mV/°C

DSS

GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

= 80 V, T

= 150°C

= ±20 V, V

= 0 V

500

±100

On Characteristics

GS(th)

DS(on)

Gate to Source Threshold Voltage

= V

, I

= 130

= 10 V, I

= 76 A

= 5 V, I

= 76 A

2.0

3.0

7.4

4.0

8.5

Static Drain to Source On Resistance

Forward Transconductance

Dynamic Characteristics

iss

oss

rss

Input Capacitance

1765

1010

2475

1415

= 50 V, V

= 0 V,

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

0.1

0.8

1.6

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Rise Time

= 50

= 76 A,

_{GS
= 10 V, R
GEN
= 6
Ω}

Turn-Off Delay Time

Fall Time

tal Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Output Charge

= 0 V to 10 V

= 50 V,

_{D
= 76 A}

oss

= 50 V, V

= 0 V

Drain-Source Diode Characteristic

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

–

304

1.3

–

Source to Drain Diode Forward Voltage

Reverse Recovery Time

= 0 V, I

= 76 A

_{GS
= 0 V, V
DD
= 50 V, I
F
= 76 A,}

/dt = 100 A/

_{GS
= 0 V, V
DD
= 50 V, I
F
= 76 A,}

/dt = 300 A/

1.0

141

Reverse Recovery Charge

Reverse Recovery Time

Reverse Recovery Charge

226

Notes

1. Pulsed Id please refer to Figure 11 & Figure 12 “Forward Bias Safe Operating Area” for more details.

2. E

of 181 mJ

is based on starting T

= 25

C, L = 3 mH, I

= 11 A, V

= 100 V, V

= 10 V.

100% test at L = 0.3 mH, I

= 25 A.

3. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.

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Typical Characteristics

= 25 °C unless otherwise noted.

150

6.0

4.5

3.0

1.5

0.0

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

= 10 V

= 8 V

= 5 V

120

= 5.5 V

= 6 V

= 5.5 V

= 8 V

= 5 V

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

= 10 V

120

150

DRAIN TO SOURCE VOLTAGE (V)

DRAIN CURRENT (A)

Figure 1.

On Region Characteristics

Figur

. N

o r m a l i z e d O n – R e s i s ta n c e

vs. Drain Current and Gate Voltage

2.2

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

= 76 A

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

= 10 V

= 76 A

= 150

= 25

-75 -50 -25

25 50 75

100 125 150 175

JUNCTION TEMPERATURE

(

)

GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance

vs. Junction Temperature

Figur

. On-Resistance

vs. Gate to

Source Voltage

150

200

100

= 0 V

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

120

= 5 V

= 175

= 25

0.1

= 25

= -55

0.01

= -55

0.001

0.0

0.2

0.4

0.6

0.8

1.0

1.2

, GATE TO SOURCE VOLTAGE (V)

, BODY DIODE FORWARD VOLTAGE (V)

Figure 5.

Transfer Characteristics

Figur

. Source

to Drain Diode

Forward Voltage vs. Source Current

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Typical Characteristics

= 25 °C unless otherwise noted.

10000

1000

100

= 76 A

iss

= 25 V

= 50 V

oss

= 75 V

rss

f = 1 MHz

_{GS
= 0 V}

0.1

100

, DRAIN TO SOURCE VOLTAGE (V)

, GATE CHARGE (nC)

Figure 7.

Gate Charge Characteristics

Figur

. C

a p a c i t a n c e v s . D r a i n

to Source Voltage

= 25

= 10 V

= 125

= 1.4

C/W

= 150

0.01

0.1

100

125

150

175

CASE TEMPERATURE

(

)

, TIME IN AVALANCHE (ms)

Figur

. U

n c l a m p e d I n d u c t i v e

Switching Capability

Figure 10.

Maximum Continuous Drain Current vs.

Case Temperature for FDP8D5N10C

500

100

THIS AREA IS

LIMITED BY r

DS(on)

THIS AREA IS

LIMITED BY r

DS(on)

100

SINGLE PULSE

= MAX RATED

1 ms

_{θ
JC
= 4.2
o
C/W}

_{θ
JC
= 1.4
o
C/W}

_{C
= 25
o
C}

10 ms

100 ms

10 ms

100 ms

CURVE BENT TO

MEASURED DATA

CURVE BENT TO

MEASURED DATA

_{C
= 25
o
C}

0.1

100

400

100

400

, DRAIN to SOURCE VOLTAGE (V)

Figure 12.

Forward Bias Safe

Operating Area for FDPF8D5N10C

Figure 11.

Forward Bias Safe

Operating Area for FDP8D5N10C

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Typical Characteristics

= 25 °C unless otherwise noted.

50000

10000

50000

SINGLE PULSE

= 4.2

C/W

= 25

SINGLE PULSE

_{θ
JC
= 1.4
o
C/W}

10000

1000

100

_{C
= 25
o
C}

1000

100

-5

-4

-3

-2

-1

-5

-4

-3

-2

-1

t, PULSE WIDTH (sec)

Figure 14.

Single Pulse Maximum Power Dissipation

for FDPF8D5N10C

Figure 13.

Single Pulse Maximum Power Dissipation

for FDP8D5N10C

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.01

0.05

0.02

0.01

NOTES:

(t) = r(t) x R

SINGLE PULSE

= 1.4

C/W

Peak T

= P

x Z

(t) + T

JC C

Duty Cycle, D = t

/ t

0.001

-5

-4

-3

-2

-1

t, RECTANGULAR PULSE DURATION (sec)

Figure 15.

Junction-to-Case Transient Thermal Response Curve for FDP2D3N10C

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.01

0.05

0.02

0.01

NOTES:

(t) = r(t) x R

= 4.2

C/W

SINGLE PULSE

Peak T

= P

x Z

(t) + T

JC C

Duty Cycle, D = t

/ t

0.001

-5

-4

-3

-2

-1

t, RECTANGULAR PULSE DURATION (sec)

Figure 16.

Junction-to-Case Transient Thermal Response Curve for FDPF2D3N10C

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Dimensional Outline and Pad Layout

TO-220, Molded, 3-Lead, Jedec Variation AB (Delta)

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Dimensional Outline and Pad Layout

TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead