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October 2016
FDPC3D5N025X9D
PowerTrench
®
Power Clip
25V Symmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
This device includes two specialized N-Channel MOSFE
T
s
i
n a
dual package. The switch node has been internally connected to
enable easy placement and routing of synchronous buck
converters. The control MOSFET (Q2) and synchronous
(Q1) have been designed to provide optimal power efficiency.
Max r
DS(on)
= 3.01 m
Ω
at V
GS
= 10 V, I
D
= 18 A
Max r
DS(on)
= 3.67 m
Ω
at V
GS
= 4.5 V, I
D
= 16 A
Q2: N-Channel
Max r
DS(on)
= 3.01 m
Ω
at V
GS
= 10 V, I
D
= 18 A
Applications
Max r
DS(on)
= 3.67 m
Ω
at V
GS
= 4.5 V, I
D
= 16 A
Computing
Low Inductance Packaging Shortens Rise/Fall Times, Result-
Communications
ing in Lower Switching Losses
General Purpose Point of Load
MOSFET Integration Enables Optimum Layout for Lower Cir-
cuit Inductance and Reduced Switch Node Ringing
RoHS Compliant
PIN1
GND
SW
SW
GND
SW
SW
GND
V+
LSG
V+
LSG
V+
SW
SW
PIN1
V+
HSG
V+
HSG
Bottom
Pin
Top
Power Clip 33 Symmetric
Description
Pin
Name
Name
Description
Pin
Name
Description
Switching Node,
Low Side Drain
1,11,12 GND(LSS) Low
Side Source
3,4,5,6 V+(HSD) High
Side Drain
LSG Low
Side Gate
HSG High
Side Gate
8,9,10 SW
2
7
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted.
Symbol
V
DS
V
GS
Parameter
Q1
25
Q2
25
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±12
74
±12
Drain Current
-Continuous
T
C
= 25 °C
T
C
= 100 °C
T
A
= 25 °C
T
A
= 25 °C
(Note5)
(Note5)
74
-Continuous
-Continuous
-Pulsed
47
18
Note1a
47
18
Note1b
I
D
A
(Note 4)
(Note 3)
349
349
E
AS
Single Pulse Avalanche Energy
96
96
mJ
W
Power Dissipation for Single Operation
Power Dissipation for Single Operation
T
C
= 25 °C
T
A
= 25 °C
26
1.8
Note1a
26
1.8
Note1b
P
D
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case
4.8
4.8
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
70
Note1a
135
Note1c
70
Note1b
135
Note1d
°C/W
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDPCN025X9D
FDPC3D5N025X9D
Power Clip 33 Symm
13 ”
12 mm
3000 units
Electrical Characteristics
T
J
= 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Type Min.
Typ.
Max.
Units
Off Characteristics
I
I
D
= 250
μ
A, V
GS
= 0 V
D
= 250
μ
A, V
GS
= 0 V
Q1
Q2
25
25
BV
DSS
Drain to Source Breakdown Voltage
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25 °C
D
= 250
μ
A, referenced to 25 °C
Q1
Q2
23
23
mV/°C
I
V
V
DS
= 20 V, V
GS
= 0 V
DS
= 20 V, V
GS
= 0 V
Q1
Q2
1
1
μ
A
μ
A
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current,
Forward
V
GS
= 12 V/-8 V, V
DS
= 0 V
V
Q1
Q2
±100
±100
nA
nA
GS
= 12 V/-8 V, V
DS
= 0 V
On Characteristics
V
V
GS
= V
DS
, I
D
= 250
μ
A
GS
= V
DS
, I
D
= 250
μ
A
Q1
Q2
1.0
1.0
1.5
1.5
3.0
3.0
V
GS(th)
Gate to Source Threshold Voltage
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25 °C
D
= 250
μ
A, referenced to 25 °C
Q1
Q2
-4
-4
mV/°C
I
V
V
V
GS
= 10V, I
D
= 18 A
GS
= 4.5 V, I
D
= 16 A
GS
= 10 V, I
D
= 18 A,T
J
=125 °C
2.0
2.4
2.87
3.01
3.67
4.32
Q1
Q2
r
DS(on)
Drain to Source On Resistance
m
Ω
V
V
V
GS
= 10V, I
D
= 18 A
GS
= 4.5 V, I
D
= 16
A
GS
= 10 V, I
D
= 18 A ,T
J
=125 °C
2.5
2.9
3.6
3.01
3.67
4.33
V
V
DS
= 5 V,
I
D
= 18
A
DS
= 5 V,
I
D
= 18
A
Q1
Q2
133
124
g
FS
Forward Transconductance
S
Dynamic Characteristics
Q1
Q2
2385
2385
3340
3340
C
iss
C
oss
C
rss
R
g
Input Capacitance
pF
pF
pF
Ω
Q1:
V
DS
= 13 V, V
GS
= 0
V
, f = 1
M
HZ
Q1
Q2
612
612
860
860
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q2:
Q1
Q2
78
78
130
130
V
DS
= 13 V, V
GS
= 0
V
, f = 1
M
HZ
Q1
Q2
0.1
0.1
0.6
0.6
1.8
1.8
Switching Characteristics
Q1
Q2
10
10
20
20
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
ns
ns
Q1:
Q1
Q2
3
3
10
10
V
DD
= 13V, I
D
= 18 A, R
GEN
= 6
Ω
Q1
Q2
29
29
46
46
Q2:
Turn-Off Delay Time
Fall Time
ns
V
DD
= 13 V, I
D
= 18 A, R
GEN
= 6
Ω
Q1
Q2
3
3
10
10
ns
Q1
Q2
36
36
51
51
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
Q1
nC
nC
nC
nC
Q1
Q2
17
17
24
24
V
DD
= 13
V
,
I
D
Q
g
V
GS
= 0 V to 4.5 V
= 18 A
Q2
Q1
Q2
5.3
5.3
Q
gs
Q
gd
V
DD
= 13
V
,
I
D
= 18 A
Q1
Q2
3.9
3.9
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
2
Electrical Characteristics
T
J
= 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Type Min.
Typ.
Max. Units
Drain-Source Diode Characteristics
V
V
GS
= 0 V, I
S
= 18 A
GS
= 0 V, I
S
= 18 A
(Note 2)
Q1
(Note 2)
Q2
0.8
0.8
1.2
V
V
SD
I
S
I
S,Pulse
t
rr
Source to Drain Diode Forward Voltage
Diode continuous forward current
Diode pulse current
1.2
Q1
Q2
74
74
A
A
T
C
= 25 °C
Q1
Q2
349
349
Q1
Q2
35
35
56
ns
56
Q1
Reverse Recovery Time
I
F
= 18 A, di/dt = 100 A/
μ
s
Q2
I
F
= 18 A, di/dt = 100 A/
μ
s
Q1
Q2
19
19
35
nC
35
Q
rr
Reverse Recovery Charge
Notes:
2
1.R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is determined by the user’s board design.
θ
JA
θ
CA
b. 70 °C/W when mounted on
a 1 in
pad of
2 oz
copper
a. 70 °C/W when mounted on
a 1 in
pad of
2 oz
copper
2
2
d. 135 °C/W when mounted on
a
minimum pad of 2 oz copper
c. 135 °C/W when mounted on
a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
o
3. Q1 :E
of 96 mJ is based on starting T
= 25
C; N-ch: L = 3 mH, I
= 8 A, V
= 25 V, V
= 10 V. 100% test at L= 0.1 mH, I
= 26 A.
AS
J
AS
DD
GS
AS
o
Q2: E
of 96 mJ is based on starting T
= 25
C; N-ch: L = 3 mH, I
= 8 A, V
= 25 V, V
= 10 V. 100% test at L= 0.1 mH, I
= 26 A.
AS
J
AS
DD
GS
AS
4. Pulse Id refers to Figure.11 & Figure. 26 Forward Bias Safe Operation Area.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
3
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted.
100
75
50
25
0
4
3
2
1
0
V
GS
= 10 V
V
GS
= 4.5 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 3 V
V
GS
= 3 V
V
GS
= 3.5 V
V
GS
= 10 V
V
GS
= 4 V
V
GS
= 4.5 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.00
0.25
0.50
0.75
0
25
50
75
100
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
Figure 1.
On Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s t a n c e
vs. Drain Current and Gate Voltage
1.6
15
10
5
I
D
= 18 A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
GS
= 10 V
I
D
= 18 A
T
J
= 125
o
C
T
J
= 25
o
C
0
-75 -50 -25
0
25 50 75
100 125 150
2
3
4
5
6
7
8
9
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figur
e
4
. On-Resistance
vs. Gate to
Source Voltage
100
100
V
GS
= 0 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
10
1
75
50
25
0
V
DS
= 5 V
T
J
= 150
o
C
T
J
= 150
o
C
T
J
= 25
o
C
0.1
T
J
= 25
o
C
T
J
= -55
o
C
0.01
T
J
= -55
o
C
0.001
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figure 6.
Source to Drain Diode
Forward Voltage vs. Source Current
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
4
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted.
10
8
10000
1000
100
I
D
= 18 A
C
iss
V
DD
= 10 V
V
DD
= 13 V
C
oss
6
V
DD
= 15 V
4
C
rss
2
f = 1 MHz
GS
= 0 V
V
0
10
0
8
16
24
32
40
0.1
1
10
25
150
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s . D r a i n
to Source Voltage
80
60
40
20
0
50
T
J
= 25
o
C
V
GS
= 10 V
10
T
J
= 100
o
C
T
J
= 125
o
C
V
GS
= 4.5 V
R
θ
JC
= 4.8
o
C/W
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
T
C
,
CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs.
Case Temperature
500
10000
SINGLE PULSE
R
θ
JC
= 4.8
o
C/W
C
= 25
o
C
100
10
10
μ
s
T
1000
100
10
100
μ
s
1 ms
THIS AREA IS
LIMITED BY r
DS(on)
1
10 ms
100 ms
SINGLE PULSE
T
J
= MAX RATED
R
θ
JC
= 4.8
o
C/W
C
= 25
o
C
0.1
0.01
CURVE BENT TO
MEASURED DATA
T
10
-5
10
-4
10
-3
t, PULSE WIDTH (sec)
10
-2
10
-1
0.01
0.1
1
10
100
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figur
e
1
1. Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse Maximum Power
Dissipation
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
5
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted.
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.05
0.02
0.01
DM
t
1
t
2
NOTES:
(t) = r(t) x R
0.01
0.001
Z
θ
JC
θ
JC
SINGLE PULSE
o
R
= 4.8
C/W
θ
JC
Peak T
= P
x Z
(t) + T
J
DM
θ
JC C
Duty Cycle, D = t
/ t
1
2
10
-5
10
-4
10
-3
10
-2
10
-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13.
Junction-to-Case Transient Thermal Response Curve
100000
10000
1000
100
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
10
1
0.1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 14.
Single Pulse
Maximum Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
10
-1
10
-2
10
-3
10
-4
10
-5
P
DM
0.1
0.05
0.02
0.01
t
1
t
2
NOTES:
Z
(t) = r(t) x R
θ
JA
θ
JA
o
R
= 135
C/W
θ
JA
Peak T
= P
Duty Cycle, D = t
/ t
x Z
(t) + T
J
DM
θ
JA A
SINGLE PULSE
1
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
100
10
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 15.
Junction-to-Ambient Transient Thermal Response Curve
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
6
Typical Characteristics (Q2 N-Channel)
T
J
= 25 °C unless otherwise noted.
100
75
50
25
0
4
3
2
1
0
V
GS
= 10 V
V
GS
= 4.5 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 3 V
V
GS
= 3 V
V
GS
= 3.5 V
V
GS
= 10 V
V
GS
= 4 V
V
GS
= 4.5 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.00
0.25
0.50
0.75
0
25
50
75
100
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
Figure 16.
On- Region Characteristics
Figure 17. Normalized on-Resistance vs. Drain
Current and Gate
Voltage
15
1.6
I
D
= 18 A
GS
= 10 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
I
D
= 18 A
10
5
T
J
= 125
o
C
T
J
= 25
o
C
0
2
3
4
5
6
7
8
9
10
-75 -50 -25
0
25 50 75
100 125 150
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 19. On-Resistance vs. Gate to
Source Voltage
Figure 18. Normalized On-Resistance
vs. Junction Temperature
100
100
V
GS
= 0 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
10
1
75
50
25
0
V
DS
= 5 V
T
J
= 150
o
C
T
J
= 150
o
C
T
J
= 25
o
C
0.1
T
J
= 25
o
C
T
J
= -55
o
C
0.01
T
J
= -55
o
C
0.001
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 20. Transfer Characteristics
Figure 21. Source to Drain Diode
Forward Voltage vs. Source Current
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
7
Typical Characteristics (Q2 N-Channel)
T
J
= 25°C unless otherwise noted.
10000
1000
100
10
8
I
D
= 18 A
C
iss
V
DD
= 10 V
V
DD
= 13 V
C
oss
6
V
DD
= 15 V
4
C
rss
2
f = 1 MHz
V
GS
= 0 V
10
0
0.1
1
10
25
150
1
0
8
16
24
32
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 23. Capacitance vs. Drain
to Source Voltage
Figure 22. Gate Charge Characteristics
80
60
40
20
0
50
10
T
J
= 25
o
C
V
GS
= 10 V
T
J
= 100
o
C
T
J
= 125
o
C
V
GS
= 4.5 V
R
θ
JC
= 4.8
o
C/W
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
T
C
,
CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figure 24. Unclamped Inductive
Switching Capability
F ig ure 25 . Ma ximum
C on tin uo us
D rain
Current vs.
Case Temperature
500
100
10000
1000
100
SINGLE PULSE
R
θ
JC
= 4.8
o
C/W
C
= 25
o
C
10
μ
s
T
10
1
100
μ
s
1 ms
THIS AREA IS
LIMITED BY r
DS(on)
10 ms
100 ms
SINGLE PULSE
T
J
= MAX RATED
R
θ
JC
= 4.8
o
C/W
T
C
= 25
o
C
0.1
CURVE BENT TO
MEASURED DATA
0.01
10
10
-5
10
-4
10
-3
t, PULSE WIDTH (sec)
10
-2
10
-1
0.01
0.1
1
10
100
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 26. Forward Bias Safe
Operating Area
Figure 27. Single Pulse
Maximum Power
Dissipation
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
8
Typical Characteristics (Q2 N-Channel)
T
J
= 25 °C unless otherwise noted.
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
0.01
0.001
Z
θ
JC
θ
JC
o
R
= 4.8
C/W
SINGLE PULSE
θ
JC
Peak T
= P
x Z
(t) + T
θ
JC C
J
DM
Duty Cycle, D = t
/ t
1
2
10
-5
10
-4
10
-3
10
-2
10
-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 28. Junction-to-Case Transient Thermal Response Curve
100000
10000
1000
100
SINGLE PULSE
θ
JA
= 135
o
C/W
T
A
= 25
o
R
C
10
1
0.1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 29. Single Pulse
Maximum Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
10
-1
10
-2
10
-3
10
-4
10
-5
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
NOTES:
Z
R
(t) = r(t) x R
θ
JA
θ
JA
o
= 135
C/W
θ
JA
Peak T
= P
x Z
(t) + T
J
DM
θ
JA A
Duty Cycle, D = t
/ t
SINGLE PULSE
1
2
10
-6
10
-5
10
-4
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (sec)
10
-1
1
10
100
1000
Figure 30. Junction-to-Ambient Transient Thermal Response Curve
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
9
3.30
B
0.10 B
2X
A
3
4
2
1
C.L.
10
7
1.800
0.300
11
C.L.
12
6
5
1.060
0.725
5
6
12
11
3.30
0.000
0.810
KEEP OUT AREA
1.060
1.414
1.800
1
4
0.10
A
7
8
9
10
2X
PIN#1
0.650
INDICATOR
0.420
SCALE: 1:1
SCALE 1:1
C.L.
0.650
SEE DETAIL “A”
0.10 C
0.05
0.00
0.80
0.70
0.05 C
C
0.25
0.15
SCALE: 1:1
SEATING
PLANE
SCALE: 2:1
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING
DOES NOT FULLY CONFORM TO
JEDEC REGISTRATION MO-220, VARIATION
WEEC-1
1
2
3
4
0.200±0.05
0.540±0.05
(5X)
5
12
0.675±0.05
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS
DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DRAWING
FILE NAME: MKT-PQFN12A_REV1
3.300±0.05 0.000
11
0.760±0.05
6
1.364±0.05
0.540±0.05
10
9
8
7
0.320±0.05
1.620
3.300±0.05
SCALE: 1:1
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