onsemi-FDPF14N30
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November 2013
FDPF14N30
N-Channel UniFET
MOSFET
300 V, 14 A, 290 m
Ω
TM
Features
Description
UniFET
TM
MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
•
•
•
•
•
R
DS(on)
= 290 m
Ω
(Max.) @ V
GS
= 10 V, I
D
= 7 A
Low Gate Charge (Typ. 18 nC)
Low C
rss
(Typ. 17 pF)
100% Avalanche
T
e
sted
Improved dv/dt Capability
Applications
•
•
PDP TV
Uninterruptible Power Supply
D
G
G
D
S
TO-220F
S
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted.
Symbol
V
DSS
Parameter
FDPF14N30
Unit
Drain-Source Voltage
Drain Current
300
V
I
D
– Continuous (T
C
= 25
°
C)
– Continuous (T
C
= 100
°
C)
1
4 *
8.4
*
A
A
(Note 1)
I
DM
Drain Current
– Pulsed
56
*
30
A
V
V
GSS
E
AS
I
AR
Gate-Source voltage
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
330
14
mJ
A
E
AR
dv/dt
P
D
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
14
mJ
V/ns
4.5
Power Dissipation
(T
C
= 25
°
C)
– Derate above 25
°
C
Operating and Storage
T
e
mperature Range
Maximum Lead
T
e
mperature for Soldering, 1/8” from Case for 5 Seconds
35
0.28
W
W/
°
C
T
J,
T
STG
-55 to +150
300
°
C
°
C
T
L
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θ
JC
R
θ
JA
Parameter
FDPF14N30
3.56
Unit
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
°
C/W
62.5
©2007 Fairchild Semiconductor Corporation
FDPF14N30 Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDPF14N30
FDPF14N30
TO-220F
Tube
N/A
N/A
50 units
Electrical Characteristics
T
C
= 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0
V
,
I
D
= 250
μ
A
D
= 250
μ
A, Referenced to 25
°
C
300
—
—
—
—
V
Δ
BV
DSS
/
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
0.3
V/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 300 V, V
GS
= 0 V
DS
= 240 V, T
C
= 125
°
C
—
—
—
—
1
10
μ
A
μ
A
V
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 30
V
,
V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
—
—
—
—
100
nA
nA
-100
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
—
—
5.0
0.29
—
V
Ω
S
Static Drain-Source
On-Resistance
V
GS
= 10
V
,
I
D
= 7 A
0.24
10.5
g
FS
Forward Transconductance
V
DS
= 40
V
,
I
D
= 7 A
—
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
V
DS
= 25
V
, V
GS
= 0 V,
f = 1.0 MHz
—
—
—
815
150
17
1060
195
25
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
t
d(off)
t
f
V
DD
= 150
V
,
I
D
= 14 A,
—
—
—
—
—
—
—
20
105
30
75
18
4.5
8
50
120
70
160
25
—
ns
ns
V
GS
= 10
V
,
R
G
= 25
Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4)
(Note 4)
ns
Q
g
V
DS
= 240 V, I
D
= 14 A,
GS
= 10 V
nC
nC
nC
V
Q
gs
Q
gd
—
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
—
—
—
—
—
—
—
14
56
1.4
—
A
A
I
SM
V
SD
t
rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0
V
,
I
S
= 14 A
—
V
V
GS
= 0
V
,
I
S
= 14 A,
235
1.6
ns
μ
C
dI
F
/dt =100 A/
μ
s
Q
rr
Reverse Recovery Charge
—
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 2.8 mH, I
= 14 A, V
= 50 V, R
= 25
Ω
, starting T
= 25
°
C.
AS
DD
G
J
3. I
≤
14 A, di/dt
≤
200 A/
μ
s, V
≤
BV
, starting T
= 25
°
C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
©2007 Fairchild Semiconductor Corporation
FDPF14N30 Rev. C1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
2
10
1
10
0
V
GS
10
2
10
1
10
0
10
-1
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom :
5.5 V
150
o
C
25
o
C
-55
o
C
* Notes :
1. V
DS
= 40V
* Notes :
1. 250
μ
s Pulse Test
2. 250
μ
s Pulse Test
o
2. T
C
= 25 C
2
4
6
8
10
12
10
-1
10
0
10
1
V
GS
, Gate-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.3
1.2
1.1
1.0
10
2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
GS
= 10V
10
1
V
G
S
= 20V
150
o
C
25
o
C
* Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
o
* Note : T
J
= 25 C
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
5
10
15
20
25
30
35
40
45
V
SD
, Source-Drain voltage [V]
I
D
, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2000
12
10
8
C
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
DS
= 60V
V
DS
= 150V
C
oss
C
V
DS
= 240V
iss
1000
6
4
* Note :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
2
* Note : I
D
= 14A
0
10
-1
0
10
0
10
1
0
2
4
6
8
10
12
14
16
18
20
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
©2007 Fairchild Semiconductor Corporation
FDPF14N30 Rev. C1
3
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
*
N
otes :
1. V
G
S
= 0 V
0.9
* Notes :
1. V
G
S
= 10 V
2. I
D
=
2
50
μ
A
0.5
2. I
D
= 7 A
0.8
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T,
J
unction Temperature [
o
C
]
T
J
, Junction Temperature [
o
C
]
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
15
10
5
10
2
10
μ
s
100
μ
s
10
1
1
m
s
10 ms
100 ms
DC
Operation in This Area
is Limited by R
DS(on)
10
0
10
-1
10
-2
* Notes :
1. T
C
= 25
o
2. T
J
= 150
o
C
C
3. Single Pulse
0
25
50
75
100
125
150
10
0
10
1
10
2
T
C
, Case Temperature [
o
C]
V
DS
, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
1 0
1
D =
0
.5
0.2
1 0
0
0.1
P
DM
0.05
t
1
1 0
-1
0.02
t
2
0.01
*
N o te s
1. Z
θ
J
C
(
t)
2. D
u ty
F a c to r,
D = t
1
/t
2
3. T
J
M
T
C
P
D M
Z
θ
J
C
(
t)
:
o
=
3 .5 6
C /W
M a x.
1 0
-2
single pulse
–
=
*
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
t
1
, S
q u
a
re
W a
ve P
ulse D
u ra tio n
[se c]
©2007 Fairchild Semiconductor Corporation
FDPF14N30 Rev. C1
4
V
GS
Same Type
as DUT
50K
Ω
Q
g
12V
200nF
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
BV
DSS
——————–
BV
DSS
– V
DD
L
1
2
2
—-
E
AS
=
L I
AS
V
DS
I
D
BV
DSS
I
AS
R
G
V
DD
I
D
(t)
V
V
DS
(t)
V
DD
DUT
G
S
t
p
t
p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2007 Fairchild Semiconductor Corporation
FDPF14N30 Rev. C1
5
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2007 Fairchild Semiconductor Corporation
FDPF14N30 Rev. C1
6
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2007 Fairchild Semiconductor Corporation
FDPF14N30 Rev. C1
7
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™
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max
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Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
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Datasheet contains preliminary data; supplementary data will be published at a later
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Not In Production
Rev. I66
©2007 Fairchild Semiconductor Corporation
FDPF14N30 Rev. C1
8
