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November 2013
FDPF8N60ZUT
N-Channel UniFET
II Ultra FRFET
MOSFET
600 V, 6.5 A, 1.35
Ω
TM
TM
Features
Description
•
•
•
•
•
•
R
DS(on)
= 1.15
Ω
(Typ.) @ V
GS
= 10 V, I
D
= 3.25 A
Low Gate Charge (Typ. 20 nC)
Low C
rss
(Typ. 10 pF)
UniFET
TM
II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFE
T
,
a
nd also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. UniFET II Ultra FRFET
TM
MOSFET has much superior
body diode reverse recovery performance. Its t
rr
is less than
50nsec and the reverse dv/dt immunity is 20V/nsec while nor-
mal planar MOSFE
T
s
h
ave over 200nsec and 4.5V/nsec
respectively. Therefore UniFET
II Ultra FRFET
MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of
the MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
100% Avalanche
T
e
sted
Improved dv/dt Capability
RoHS Compliant
Applications
•
•
•
•
LCD/LED TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
G
G
D
S
TO-220F
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
Parameter
FDPF8N60ZUT
Unit
V
Drain to Source Voltage
Gate to Source Voltage
600
±30
V
– Continuous (T
C
= 25
o
C)
– Continuous (T
C
= 100
o
C)
– Pulsed
6.5*
I
D
Drain Current
A
3.9*
I
DM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
26*
A
mJ
A
E
AS
I
AR
Single Pulsed Avalanche Energy
Avalanche Current
420
6.5
E
AR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
13.5
20
mJ
V/ns
W
W/
o
C
o
C
(T
C
= 25
o
C)
– Derate Above 25
o
C
34.5
0.28
-55 to +150
300
P
D
Power Dissipation
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
Maximum Lead
T
e
mperature for Soldering, 1/8” from Case for 5 Seconds
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θ
JC
R
θ
JA
Parameter
Unit
FDPF8N60ZUT
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
3.6
o
C/W
62.5
©2012 Fairchild Semiconductor Corporation
FDPF8N60ZUT Rev. C2
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDPF8N60ZUT
FDPF8N60ZUT
TO-220F
Tube
N/A
N/A
50 units
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V, T
J
= 25
o
C
D
= 250
μ
A, Referenced to 25
o
C
DS
= 600 V, V
GS
= 0 V
600
–
–
–
–
V
Δ
BV
DSS
/
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
0.7
V/
o
C
V
–
–
–
–
–
–
25
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μ
A
μ
A
V
DS
= 480 V, T
C
= 125
o
C
250
±10
V
GS
= ±30 V, V
DS
= 0 V
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 3.25 A
V
DS
= 40
V
,
I
D
= 3.25 A
3.0
–
1.15
7
5.0
1.35
–
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
–
–
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
950
110
10
20
5
1265
150
15
26
–
pF
pF
pF
nC
nC
nC
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
V
DS
= 480 V, I
D
= 6.5 A,
GS
= 10 V
Q
gs
Q
gd
(Note 4)
8
–
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
–
20
30
55
35
5
50
70
ns
ns
ns
ns
Ω
V
DD
= 300 V, I
D
= 6.5 A,
G
= 25
Ω,
V
GS
= 10 V
–
–
R
Turn-Off Delay Time
Turn-Off Fall Time
120
80
–
(Note 4)
ESR
Equivalent Series Resistance
f = 1 MHz
0.5
11
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
6.5*
26
1.6
–
A
A
I
SM
V
SD
t
rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
SD
= 6.5 A
–
V
40
42
ns
nC
V
GS
= 0 V, I
SD
= 6.5 A,
dI
F
/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
–
Notes:
1: Repetitive
rating: pulse-width limited by maximum junction temperature.
2: L
= 20 mH, I
= 6.5 A, V
= 50 V, R
= 25
Ω
, starting T
= 25°C.
AS
DD
G
J
3:
I
≤
6.5 A, di/dt
≤
200 A/
μ
s, V
≤
BV ,
starting T
= 25°C.
DSS J
SD
DD
4: Essentially
independent of operating temperature typical characteristics.
©2012 Fairchild Semiconductor Corporation
FDPF8N60ZUT Rev. C2
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
20
20
V
GS
=
15.0 V
*Notes:
1. V
DS
= 20V
10.0 V
10
10
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
2. 250
μ
s Pulse Test
150
o
C
25
o
C
1
1
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
0.1
0.1
0.1
1
10
20
2
4
6
8
V
GS
,Gate-Source Voltage[V]
V
DS
,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
1.5
1.4
100
10
1
150
o
C
1.3
V
GS
= 10V
25
o
C
1.2
V
GS
= 20V
*Notes:
1. V
GS
= 0V
1.1
*Note: T
C
= 25
o
C
2. 250
μ
s Pulse Test
1.0
0
3
6
9
12
0
1
2
3
4
V
SD
, Body Diode Forward Voltage [V]
I
D
, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
2000
C
C
C
= C
+ C
(C =
shorted)
gs gd
ds
iss
= C
+ C
ds gd
oss
rss
V
DS
= 150V
DS
= 300V
V
DS
= 480V
= C
gd
8
6
4
2
0
V
C
oss
1500
1000
500
0
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
iss
C
rss
*Note: I
D
= 6.5A
15
0
5
10
20
0.1
1
10
30
Q
g
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
©2012 Fairchild Semiconductor Corporation
FDPF8N60ZUT Rev. C2
3
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
1.16
1.12
1.08
1.04
1.00
50
20
μ
s
100
μ
s
10
1
1ms
10ms
Operation in This Area
is Limited by R
DS(on)
DC
0.96
0.1
0.01
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
*Notes:
1. V
GS
= 0V
0.92
2. I
D
= 250
μ
A
3. Single Pulse
0.88
-100
-50
0
50
100
150
200
1
10
100
1000
T
J
, Junction Temperature [
o
C]
V
DS
, Drain-Source Voltage [V]
Figure 9. Maximum Drain Current
vs. Case Temperature
8
6
Limited by package
4
2
0
25
50
75
100
125
150
o
T
C
, Case Temperature
[
C
]
Figure 10. Transient Thermal Response Curve
5
1
0.5
0.2
0.1
0.05
P
DM
t
1
0.1
0.02
0.01
t
2
*Notes:
1. Z
θ
JC
(t) = 3.6
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
Single pulse
0.01
0.005
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t ,
Rectangular Pulse Duration [sec]
1
©2012 Fairchild Semiconductor Corporation
FDPF8N60ZUT Rev. C2
4
I
= const.
G
Figure 11. Gate Charge Test Circuit & Waveform
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure 12. Resistive Switching Test Circuit & Waveforms
V
GS
Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FDPF8N60ZUT Rev. C2
5
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Figure 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FDPF8N60ZUT Rev. C2
6
Mechanical Dimensions
Figure 15. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2012 Fairchild Semiconductor Corporation
FDPF8N60ZUT Rev. C2
7
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power Resource
SM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
G
max
™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
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TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
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MicroPak™
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®
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Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
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®
TRUECURRENT *
μ
SerDes™
SMART START™
®
Solutions for Your Success™
®
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SPM
Fairchild
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SuperSOT™-3
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SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
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®
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OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
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FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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support devices or systems are devices or systems which, (a) are
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2012 Fairchild Semiconductor Corporation
FDPF8N60ZUT Rev. C2
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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