onsemi-FDR8508P
| Part # | onsemi-FDR8508P |
Download  | onsemi-FDR8508P |
March 1999
FDR8508P
Dual P-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description
Features
-3.0 A, -30 V.
R
DS(ON)
= 0.052
Ω
@ V
GS
= -10V
These P-Channel 2.5V specified MOSFE
T
s
a
re produced
using Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize the
on state resistance and yet maintain low gate charge for
superior switching performance.
R
DS(ON)
= 0.086
Ω
@ V
GS
= -4.5
V
.
Low gate charge. (8nC typical).
High performance trench technology for extremely
low R
DS(ON)
Applications
High power and current handling capability.
Load switch
Small footprint (38% smaller than a standard SO-8);
low profile package (1 mm thick); power handling
capability similar to SO-8.
DC/DC converter
Motor driving
D2
D2
4
5
6
D1
D1
3
2
7
8
S2
G2
S1
1
pin #1
G1
SuperSOT-8
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
FDR8508P
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
-30
V
V
A
±
20
-3
Drain Current
– Continuous
– Pulsed
(Note 1a)
-20
P
D
Power Dissipation
0.8
W
Operating and Storage Junction Temperature Range
-55 to +150
T
J
, T
stg
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
156
40
R
θ
JA
°
C/W
°
C/W
R
θ
JC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.8508
FDR8508P
13
”
12mm
3000 units
1999 Fairchild Semiconductor Corporation
FDR8508P Rev. C
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
-30
V
V
GS
= 0 V, I
D
= -250
µ
A
Breakdown Voltage Temperature
Coefficient
24
∆
BV
DSS
∆
T
J
/
I
D
= -250
µ
A, Referenced to 25
°
C
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate-Body Leakage Current
V
DS
= -24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
-1
µ
A
nA
nA
I
GSSF
I
GSSR
100
-100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
-1
-1.8
-4
-3
V
V
DS
= V
GS
, I
D
= -250
µ
A
Gate Threshold Voltage
Temperature Coefficient
∆
V
GS(th)
∆
T
J
/
I
D
= -250
µ
A, Referenced to 25
°
C
mV/
°
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -10 V, I
D
= -3 A
0.040 0.052
0.057 0.078
0.058 0.086
Ω
Ω
Ω
A
V
V
GS
= -10 V, I
D
= -3 A, T
J
= 125
°
C
GS
= -4.5 V, I
D
= -2.3 A
I
D(on)
g
FS
On-State Drain Current
V
GS
= -10 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -3 A
-20
Forward Transconductance
9
mS
Dynamic Characteristics
Input Capacitance
V
DS
= -15 V, V
GS
= 0 V, f = 1.0 MHz
750
220
100
pF
pF
pF
C
iss
C
oss
C
rss
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -15 V, I
D
= -1 A,
12
14
24
16
8
22
25
38
27
12
ns
ns
t
d(on)
t
r
t
d(off)
t
f
V
GS
= -10 V, R
GEN
= 6
Ω
ns
ns
V
DS
= -15 V, I
D
= -3A,
nC
nC
nC
Q
g
V
GS
= -5 V,
1.8
3
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
-0.67
-1.2
A
V
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= -0.67 A
(Note 2)
-0.75
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
θ
JA
surface of the drain pins. R
device operation on FR-4
board instill air.
is guaranteed by design while R
is determined by the users board design. R
shown below for
single
θ
JC
θ
CA
θ
JA
156
O
C/W when mounted on a 0.0025 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse
T
e
st: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDR8508P Rev. C
Typical Characteristics
0.12
0.1
20
V
GS
=-10V
-6.0V
-4.5V
16
-4.0V
V
GS
=-3.5V
-4.0V
0.08
0.06
0.04
0.02
12
-3.5V
-4.5V
8
-5.5V
-7.0V
12
4
0
-10V
-3.0V
0
4
8
16
20
0
1
2
3
4
5
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 1: On-Region Characteristics
Figure 2: On-Resistance Variation
vs Drain Current and Gate Voltage
0.2
0.16
0.12
0.08
0.04
0
1.4
I
D
=-3A
I
D
=-1.5A
1.3
1.2
1.1
1
V
GS
=-10V
T
J
=125
o
C
0.9
0.8
0.7
o
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3: On-Resistance Variation
vs Temperature
Figure 4: On-Resistance Variation
vs Gate-To-Source Voltage
20
16
12
8
100
V
GS
=0
V
GS
=-5V
T
J
=-55
o
C
10
1
25
o
125
o
C
T
J
=125
o
C
25
o
C
0.1
0.01
-55
o
C
4
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
2
3
4
5
-V
SD
, BODY DIODE VOLTAGE (V)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5: Transfer Characteristics
Figure 6: Body Diode Forward Voltage
Variation vs Source Current
and Temperature
FDR8508P Rev. C
Typical Characteristics
(continued)
10
1200
1000
800
600
400
200
0
I
D
=-3.0A
V
DS
=-5V
-10V
8
6
4
2
0
C
iss
C
oss
C
rss
0
6
12
18
24
30
0
3
6
9
12
15
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
10
50
40
30
20
10
0
SINGLE PULSE
R
θ
JA
=156
o
C/W
100
s
µ
R
DS(ON)
o
1ms
10ms
100ms
1
1s
10s
DC
0.1
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 10: Single Pulse Maximum
Power Dissipation
Figure 9: Maximum Safe Operating Area
1
D = 0.5
0.2
0.5
R
(t) = r(t)
* R
JA
θ
JA
0.3
0.2
θ
R
= 135
°
C/W
JA
θ
0.1
0.1
P(pk)
0.05
t
1
0.05
t
2
0.02
0.01
Single Pulse
0.03
0.02
T
– T
= P
* R
(t)
JA
J
θ
A
Duty Cycle, D = t
/ t
1
2
0.01
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDR8508P Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
UHC™
VCX™
CROSSVOLT™
E
2
CMOS
TM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST
®
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
