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August 2006
FDS2672
tm
N-Channel UltraFET Trench
®
MOSFET
200V, 3.9A, 70m
Ω
Features
General Description
Max r
DS(on)
=
70m
Ω
at V
GS
= 10V, I
D
= 3.9A
Max r
DS(on)
=
80m
Ω
at V
GS
= 6V, I
D
= 3.5A
Fast switching speed
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench
®
process that
has been
especially tailored to
minimize
the on-state resistance and yet maintain superior switching
performance.
High performance trench technology for extremely low
r
DS(on)
Application
DC-DC conversion
RoHS compliant
D
D
5
6
7
8
4
3
2
1
D
D
SO-8
G
S
S
S
Pin 1
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
200
±20
3.9
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
V
V
(Note 1a)
I
D
A
mJ
W
50
E
AS
P
D
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
(Note 1a)
(Note 1b)
37.5
2.5
Power Dissipation
1.0
T
J
, T
STG
Operating and Storage
T
e
mperature
-55 to 150
°
C
Thermal Characteristics
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case
(Note 1)
(Note 1a)
(Note 1b)
25
50
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
°
C/W
125
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
12mm
Quantity
FDS2672
FDS2672
13’’
2500 units
©2006 Fairchild Semiconductor Corporation
FDS2672 Rev. B
1
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
µ
A, V
GS
= 0V
200
V
∆
BV
DSS
∆
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
µ
A, referenced to 25°C
206
mV/°
C
V
DS
= 160V, V
GS
=0V
V
DS
= 160V, V
GS
=0V T
J
= 55°C
V
GS
= ±20V
1
µ
A
µ
A
nA
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
10
±100
On Characteristics
(Note 2)
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
µ
A
2
2.9
-11
4
V
∆
V
GS(th)
∆
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
µ
A, referenced to 25°C
mV/°C
V
GS
= 10
V
,
I
D
= 3.9A
59
63
70
80
r
DS(on)
g
FS
Drain to Source On Resistance
Forward Transcondductance
V
GS
= 6
V
,
I
D
= 3.5A
m
Ω
V
GS
= 10
V
,
I
D
= 3.9A, T
J
= 125°C
V
DS
= 10V,I
D
= 3.9A
124
15
148
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
1905
100
30
2535
135
45
pF
pF
pF
Ω
V
DS
= 100V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
0.7
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
22
10
35
10
33
11
7
35
20
56
20
46
ns
ns
V
DD
= 100V, I
D
= 3.9A
V
GS
= 10V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
ns
ns
Q
g(TOT)
Q
gs
Q
gd
T
o
tal Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
nC
nC
nC
V
DD
=100V I
D
= 3.9A
Drain-Source Diode Characteristics
V
SD
t
rr
Source to Drain Diode
Voltage
Reverse Recovery Time
V
GS
= 0V, I
S
= 3.9A
0.75
67
1.2
101
269
V
I
F
= 3.9A, di/dt = 100A/
µ
s
I
F
= 3.9A, di/dt = 100A/
µ
s
ns
nC
Q
rr
Reverse Recovery Charge
179
Notes:
1:
R
is the sum of the junction-to-case and case-to- ambient
thermal resistance where the case thermal reference is defined
as the solder mounting surface of
θ
JA
the drain pins. R
is guaranteed by design
while R
is determined by the user’s board design.
θ
JC
θ
CA
a)
50°C/W (10 sec)
b)
125°C/W when mounted on a
minimum pad .
62.5°C/W steady state
2
when mounted on a 1in
pad of 2 oz copper
Scale 1:1 on letter size paper
2:
Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3:
Starting T
= 25
°
C, L = 3mH, I
= 5A, V
= 100V, V
= 10V
J
AS
DD
GS
FDS2672 Rev. B
2
Typical Characteristics
T
J
= 25°C unless otherwise noted
3.0
2.5
2.0
1.5
1.0
0.5
50
40
30
20
10
0
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
V
= 10V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
GS
V
GS
= 4.5V
V
= 6V
GS
V
GS
= 5V
V
GS
= 6V
V
= 5V
GS
V
= 4.5V
GS
V
GS
= 10V
0
5
10 15 20 25 30 35 40 45 50
I
D
, DRAIN CURRENT(A)
0
1
2
3
4
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1.
On Region Characteristics
Figure 2.
Normalized On-Resistance vs Drain
Current and Gate Voltage
180
2.8
2.2
1.6
1.0
0.4
PULSE DURATION = 80
µ
s
I =
3.9A
D
I
= 3.9A
D
DUTY CYCLE = 0.5%MAX
160
140
120
100
80
V
= 10V
GS
T =
150
o
C
J
60
T
J
= 25
o
C
40
3.0
10
4.5
6.0
7.5
9.0
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3.
Normalized On Resistance vs Junction
Temperature
Figure 4.
On-Resistance vs Gate to Source
Voltage
30
100
PULSE DURATION = 80
µ
s
V
GS
= 0V
DUTY CYCLE = 0.5%MAX
25
10
1
V
= 10V
DD
T =
150
o
C
J
20
15
10
5
T =
150
o
C
J
T
J
= 25
o
C
T
= 25
o
C
J
0.1
0.01
T
J
= -55
o
C
T
J
= – 55
o
C
5
0
1E-3
2
3
4
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V ,
BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5.
Transfer Characteristics
Figure 6.
Source to Drain
Diode Forward
Voltage vs Source Current
FDS2672 Rev. B
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
10000
10
f = 1MHz
= 0V
V
GS
C
iss
V
DD
= 50V
8
6
4
2
0
1000
100
10
V
= 100V
DD
C
oss
V
= 150V
DD
C
rss
0.1
1
10
100
0
8
16
24
32
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE(nC)
g
Figure 7.
Gate Charge Characteristics
Figure 8.
Capacitance vs Drain to Source Voltage
4.0
3.5
3.0
10
V
= 10V
GS
2.5
2.0
1.5
1.0
0.5
0.0
T
J
= 25
o
C
1
V
= 6V
GS
T
J
= 125
o
C
R
θ
JA
= 50
o
C/W
50
0.1
0.01
25
75
100
125
150
0.1
1
10
100
1000
t
AV
, TIME IN AVALANCHE(ms)
T
A
, AMBIENT TEMPERATURE
(
o
C
)
Figure 9.
Unclamped Inductive Switching
Capability
Figure 10.
Ambient Continuous Drain Current vs
Case Temperature
10
2
3000
o
T
= 25
C
A
V
GS
= 10V
1000
100
10
FOR TEMPERATURES
10
1
10
0
o
100us
1ms
ABOVE 25
C DERATE PEAK
150
–
T
A
I = I
———————–
25
125
LIMITED BY
PACKAGE
10
-1
10
-2
10
-3
10ms
100ms
1s
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
DC
T
= MAX RATED
= 25
O
C
SINGLE PULSE
J
T
A
1
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
10
2
10
3
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe Operating Area
Figure 12.
Single Pulse Maximum Power
Dissipation
FDS2672 Rev. B
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
1E-3
1E-4
t
1
t
2
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
1
2
x R
PEAK T
= P
J
x Z
+ T
DM
θ
JA
θ
JA
A
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 13.
Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design
FDS2672 Rev. B
5
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Datasheet Identification
Advance Information
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Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
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supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
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Rev. I20
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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