onsemi-FDS4480
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FDS4480
40V N-Channel PowerTrench
Ò
MOSFET
Features
General Description
·
·
·
10.8 A, 40 V.
R
DS(ON)
= 12 m
W
@ V
GS
= 10 V
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
Low gate charge
(29 nC)
High performance trench technology for extremely
low R
DS(ON)
Applications
·
High power and current handling capability
·
DC/DC converter
D
5
6
7
8
4
3
2
1
D
D
D
G
SO-8
S
S
S
Pin 1
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
40
+30/–20
10.8
V
V
A
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
(Note 1a)
45
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
2.5
P
D
W
1.4
(Note 1c)
1.2
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +175
°
C
Thermal Characteristics
R
q
JA
R
q
JA
R
q
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
FDS4480
FDS4480
13’’
12mm
Ó
2002
Semiconductor Components Industries, LLC.
September-2017, Rev 4
Publication Order Number:
FDS4480/D
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
E
AS
I
AS
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V
DD
=40V, I
D
=10.8A
240
mJ
A
10.8
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V,
I
D
= 250
m
A
40
V
D
BV
DSS
D
T
J
Breakdown Voltage Temperature
Coefficient
42
I
D
= 250
m
A, Referenced to 25
°
C
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
= 32 V,
V
GS
= 0 V
V
GS
= 30 V,
V
DS
= 0 V
V
GS
= –20 V,
V
DS
= 0 V
1
m
A
nA
nA
I
GSSF
I
GSSR
100
–100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
m
A
2
3.9
–8
5
V
D
V
GS(th)
D
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
m
A, Referenced to 25
°
C
mV/
°
C
R
DS(on)
Static Drain–Source On–Resistance
V
GS
= 10 V,
I
D
= 10.8 A
8
13
12
21
m
W
V
GS
= 10 V,I
D
= 10.8 A, T
J
=125
°
C
I
D(on)
g
FS
On–State Drain Current
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 10 V,
I
D
= 10.8 A
22
A
S
Forward Transconductance
36
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
1686
384
pF
pF
pF
V
DS
= 20 V,
V
GS
= 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
185
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
12
9
22
18
48
27
41
ns
ns
V
DD
= 20 V,
I
D
= 1 A,
V
GS
= 10
V, R
GEN
= 6
W
30
15
29
8.7
8.0
ns
ns
Q
g
Q
gs
Q
gd
nC
nC
nC
V
DS
= 20 V,
I
D
= 10.8 A,
V
GS
= 10 V
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
2.1
1.2
A
V
Drain–Source Diode Forward
V
GS
= 0 V,
I
S
= 2.1 A
Voltage
V
SD
(Note 2)
0.7
t
rr
Diode Reverse Recovery Time
I
F
= 10.8 A, d
iF
/d
t
= 100 A/µs
27
58
nS
nC
Q
rr
Diode Reverse Recovery Charge
Notes:
1.
R
q
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
q
JC
is guaranteed by design while R
q
CA
is determined by the user’s board design.
a) 50°C/W
when
mounted on a 1in
2
pad of 2 oz copper
b) 105°C/W
when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W
when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
3
Typical Characteristics
80
2
1.8
1.6
1.4
1.2
1
V
GS
= 10V
6.0V
V
GS
= 5.0V
70
60
50
40
30
20
10
0
5.5V
5.5V
5.0V
6.0V
7.0V
4.5V
8.0V
60
10V
0.8
0
1
2
3
4
0
20
40
I
D
, DRAIN CURRENT (A)
80
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
1.8
1.6
1.4
1.2
1
0.025
I
D
= 5.4A
I
D
= 10.8A
V
GS
= 10V
0.022
0.019
0.016
0.013
0.01
T
A
= 125
o
C
0.8
0.6
0.4
T
A
= 25
o
C
0.007
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
80
60
40
20
0
V
GS
= 0V
25
o
C
125
o
C
T
A
= -55
o
C
V
DS
= 5V
10
T
A
= 125
o
C
1
25
o
C
0.1
-55
o
C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
2
3
4
5
6
V
SD
, BODY
DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
4
Typical Characteristics
2400
2000
1600
1200
800
10
I
D
= 10.8A
V
D
D
=
1
5 V
f = 1 MHz
V
GS
= 0 V
8
6
V
D
D
= 20 V
C
ISS
V
D
D
=
2
5 V
4
2
0
C
OSS
400
C
RSS
0
0
8
16
Q
g
, GATE CHARGE (nC)
24
32
0
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
m
s
100
SINGLE PULSE
R
q
JA
= 125°C/W
T
A
= 25°C
1ms
10ms
R
DS(ON)
LIMIT
100ms
1s
10s
1
DC
V
GS
= 10V
SINGLE PULSE
R
q
JA
= 125
o
C/W
T
A
= 25
o
C
0.1
0.01
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
t
1
, TIME (sec)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
q
JA
(t) = r(t) * R
q
JA
0.2
R
q
JA
= 125
o
C/W
0.1
0.1
0.05
P(pk)
0.02
t
1
0.01
t
2
0.01
T
J
– T
A
= P * R
q
JA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
5
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