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October 2008
FDS4897AC
Dual N & P-Channel PowerTrench
®
MOSFET
N-Channel: 40 V, 6.1 A, 26 m
Ω
P-Channel: -40 V, -5.2 A, 39 m
Ω
Features
General Description
Q1: N-Channel
These dual N- and P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
®
process
that has been especially tailored to minimize on-state resistance
and yet maintain superior switching performance.
Max r
DS(on)
= 26 m
Ω
at V
GS
= 10 V, I
D
= 6.1 A
Max r
DS(on)
= 31 m
Ω
at V
GS
= 4.5 V, I
D
= 5.6 A
Q2: P-Channel
Max r
DS(on)
= 39 m
Ω
at V
GS
= -10
V
,
I
D
= -5.2 A
Applications
Inverter
Max r
DS(on)
= 65 m
Ω
at V
GS
= -4.5
V
,
I
D
= -4.1 A
100% UIL
T
e
sted
Power Supplies
RoHS Compliant
D2
Q2
D2
G2
S2
D2
D2
5
6
4
3
2
1
D1
D1
Q1
G2
G1
S1
D1
D1
7
8
S2
G1
S1
Pin 1
SO-8
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Q1
40
Q2
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current – Continuous
– Pulsed
-40
±20
-5.2
-24
V
V
±20
6.1
24
I
D
A
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2.0
1.6
0.9
P
D
T
A
= 25 °C
(Note 1a)
T
A
= 25 °C
(Note 1b)
(Note 3)
W
E
AS
Single Pulse Avalanche Energy
37
73
mJ
°C
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
Thermal Characteristics
R
θ
JC
R
θ
JC
Thermal Resistance, Junction to Case,
Thermal Resistance, Junction to Ambient,
(Note 1)
40
78
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
FDS4897AC
FDS4897AC
SO-8
13 ”
2500 units
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
1
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max Units
Off Characteristics
I
I
D
= 250
µ
A, V
GS
= 0 V
D
= -250
µ
A, V
GS
= 0 V
Q1
Q2
40
-40
BV
DSS
Drain to Source Breakdown Voltage
V
∆
BV
DSS
∆
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
µ
A, referenced to 25 °C
D
= -250
µ
A, referenced to 25 °C
Q1
Q2
37
-32
mV/°C
I
V
V
DS
= 32 V,
V
GS
= 0 V
DS
= -32 V,
V
GS
= 0 V
Q1
Q2
1
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µ
A
-1
Q1
Q2
±100
±100
nA
nA
V
GS
= ±20 V, V
DS
= 0 V
On Characteristics
V
V
GS
= V
DS
, I
D
= 250
µ
A
GS
= V
DS
, I
D
= -250
µ
A
Q1
Q2
1.5
-1.5
2.0
-2.0
3.0
-3.0
V
GS(th)
Gate to Source Threshold Voltage
V
∆
V
GS(th)
∆
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
µ
A, referenced to 25 °C
D
= -250
µ
A, referenced to 25 °C
V
GS
= 10 V,
I
D
= 6.1 A
Q1
Q2
-6
6
mV/°C
I
20
24
30
26
31
39
V
V
GS
= 4.5 V,
I
D
= 5.6 A
GS
= 10 V,
I
D
= 6.1 A, T
J
= 125 °C
Q1
Q2
r
DS(on)
Static Drain to Source On Resistance
m
Ω
V
V
V
GS
= -10
V
,
I
D
= -5.2 A
GS
= -4.5
V
,
I
D
= -4.1 A
GS
= -10
V
,
I
D
= -5.2 A, T
J
= 125 °C
28
45
41
39
65
57
V
V
DD
= 5 V,
I
D
= 6.1 A
DD
= -5 V,
I
D
= -5.2 A
Q1
Q2
24
14
g
FS
Forward Transconductance
S
Dynamic Characteristics
Q1
Q2
795
765
1055
1015
Q1
C
iss
C
oss
C
rss
R
g
Input Capacitance
pF
pF
pF
Ω
V
DS
= 20 V, V
GS
= 0
V
, f = 1
M
HZ
Q1
Q2
95
135
130
180
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q2
V
DS
= -20 V, V
GS
= 0 V, f = 1 MHZ
Q1
Q2
65
80
100
120
Q1
Q2
1.7
3.6
Switching Characteristics
Q1
Q2
6
8
12
15
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
ns
ns
Q1
V
V
DD
= 20 V, I
D
= 6.1 A,
GS
= 10 V, R
GEN
= 6
Ω
Q1
Q2
2
3
10
10
Q1
Q2
17
17
30
30
Q2
Turn-Off Delay Time
Fall Time
ns
V
DD
= -20
V
,
I
D
= -5.2 A,
Q1
Q2
2
3
10
10
V
GS
= -10
V
,
R
GEN
= 6
Ω
ns
Q1
Q2
15
15
21
20
Q
g(TOT)
Q
gs
Q
gd
T
o
tal Gate Charge
Gate to Source
Charge
Gate to Drain “Miller” Charge
nC
nC
nC
Q1
V
GS
= 10 V, V
DD
= 20 V, I
D
= 6.1 A
Q1
Q2
2.5
2.6
Q2
Q1
Q2
2.9
3.2
V
GS
= -10
V
,
V
DD
= -20
V
,
I
D
= -5.2 A
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
2
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max Units
Drain-Source Diode Characteristics
V
V
GS
= 0 V, I
S
= 1.3 A
GS
= 0 V, I
S
= -1.3 A
(Note 2)
Q1
(Note 2)
Q2
0.75
-0.76
1.2
V
V
SD
t
rr
Source to Drain Diode
Forward Voltage
Reverse Recovery Time
-1.2
Q1
Q2
17
20
31
ns
36
Q1
I
F
= 6.1 A, di/dt = 100 A/s
Q2
I
F
= -5.2 A, di/dt = 100 A/s
Q1
Q2
7
10
15
nC
20
Q
rr
Reverse Recovery Charge
Notes:
2
1:
R
is determined with the device mounted on a 1in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
JA
θ
JC
θ
CA
the user’s board design.
a) 78 °C/W when
mounted on a
1 in
pad of 2 oz copper
b) 135 °C/W when
mounted on a
minimun pad
2
2:
Pulse Test: Pulse Width < 30
0
µ
s, Duty cycle < 2.0%.
3:
Starting T
= 25 °C, N-ch: L = 3 mH, I
= 5 A, V
= 40 V, V
= 10 V;
P-ch: L = 3 mH, I
= -7 A, V
= -40 V, V
= -10 V.
J
AS
DD
GS
AS
DD
GS
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
3
Typical Characteristics (Q1 N-Channel)
T
J
= 25 °C unless otherwise noted
24
20
16
12
8
5
4
3
2
V
GS
= 10 V
V
GS
= 4.5 V
V
GS
= 4 V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3 V
V
GS
= 3.5 V
V
GS
= 3.5 V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5 V
V
GS
= 4 V
4
V
GS
= 3 V
1
V
GS
= 10 V
20 24
0
0.0
0.5
0.5
1.0
1.5
2.0
0
4
8
12
16
V
DS
DRAIN TO SOURCE VOLTAGE (V)
,
I
D
,
DRAIN CURRENT (A)
Figure 1.
On Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
I
D
= 6.1 A
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10 V
70
60
50
40
30
20
10
I
D
= 6.1 A
T
J
= 125
o
C
T
J
= 25
o
C
6
-75 -50 -25
0
25 50 75
100 125 150
o
C
2
4
8
10
V
GS
,
GATE TO SOURCE VOLTAGE (V)
T
J
JUNCTION TEMPERATURE
,
(
)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
24
20
16
12
8
40
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
10
V
DS
= 5 V
T
J
= 150
o
C
1
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
0.1
T
J
= -55
o
C
T
J
= -55
o
C
0.01
0.001
4
0
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
4
Typical Characteristics (Q1 N-Channel)
T
J
= 25 °C unless otherwise noted
10
8
2000
1000
I
D
= 6.1 A
C
iss
V
DD
= 15 V
6
V
DD
= 25 V
C
oss
V
DD
= 20 V
100
4
C
rss
2
f = 1 MHz
= 0 V
V
GS
0
10
0.1
0
4
8
Q ,
GATE CHARGE (nC)
12
16
1
10
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
10
7
6
5
4
3
2
1
0
9
8
7
6
5
V
GS
= 10 V
4
3
V
GS
= 4.5 V
T
J
= 25
o
C
T
J
= 125
o
C
2
R
θ
JA
= 78
o
C/W
1
0.01
25
50
T
C
75
100
125
o
C
150
0.1
1
10 20
t
AV
, TIME IN AVALANCHE (ms)
,
AMBIENT TEMPERATURE
(
)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs
Ambient Temperature
30
10
1000
V
GS
= 10 V
100 us
SINGLE PULSE
R
θ
JA
= 135
o
C/W
A
= 25
o
C
100
10
1 ms
1
T
10 ms
100 ms
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
0.1
1 s
10 s
DC
1
0.01
0.01
0.5
10
-4
10
-3
10
-2
t, PULSE WIDTH (sec)
10
-1
1
10
200
0.1
1
10
100
100 1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse
Maximum
Power Dissipation
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
5
Typical Characteristics (Q1 N-Channel)
T
J
= 25 °C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
1
0.01
0.001
t
SINGLE PULSE
R
θ
JA
= 135
o
C/W
2
NOTES:
DUTY FACTOR: D = t /t
1
2
(
Note 1b
)
PEAK T
= P
J
x Z
x R
+ T
θ
JA
A
DM
θ
JA
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13.
Junction-to-Ambient Transient Thermal Response Curve
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
6
Typical Characteristics (Q2 P-Channel)
T
J
= 25 °C unless otherwise noted
24
20
16
12
8
5
4
3
2
V
GS
= -10 V
V
GS
= -5 V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -3.5 V
V
GS
=
–
4 V
V
GS
= -4.5 V
V
GS
= -4 V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -4.5 V
V
GS
= -3.5 V
V
GS
= -5 V
4
1
V
GS
= -10 V
0
0.0
0.5
0.5
-V
DS
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
24
,
DRAIN TO SOURCE VOLTAGE (V)
–
I
D
,
DRAIN CURRENT (A)
Figure 15.
On- Region Characteristics
Figure 16. Normalized on-Resistance vs Drain
Current and Gate
Voltage
120
1.8
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µ
s
I
D
= -5.2 A
GS
= -10 V
I
D
= -5.2 A
V
1.6
1.4
1.2
1.0
0.8
0.6
100
80
60
40
20
T
J
= 125
o
C
T
J
= 25
o
C
2
4
6
8
10
-75 -50 -25
T
J
0
25 50 75
100 125 150
,
JUNCTION TEMPERATURE
( )
o
C
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 18. On-Resistance vs Gate to
Source Voltage
Figure 17. Normalized On-Resistance
vs Junction Temperature
24
20
16
12
8
40
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
10
V
DS
= -5 V
T
J
= 150
o
C
1
T
J
= 25
o
C
T
J
= 150
o
C
0.1
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= -55
o
C
0.01
0.001
4
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Transfer Characteristics
Figure 20. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
7
Typical Characteristics (Q2 P-Channel)
T
J
= 25 °C unless otherwise noted
10
8
2000
1000
I
D
= -5.2 A
C
iss
C
oss
C
rss
V
DD
= -15 V
6
V
DD
= -20 V
V
DD
= -25 V
100
4
2
f = 1 MHz
= 0 V
V
GS
0
10
0.1
0
4
8
12
16
1
10
40
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 22. Capacitance vs Drain
to Source Voltage
Figure 21. Gate Charge Characteristics
6
5
4
3
2
1
10
9
8
7
6
5
4
3
V
GS
= -10 V
T
J
= 25
o
C
V
GS
= -4.5 V
2
T
J
= 125
o
C
R
θ
JA
= 78
o
C/W
1
0.1
0
25
1
10
40
50
T
C
75
100
125
o
C
150
t
AV
, TIME IN AVALANCHE (ms)
,
AMBIENT TEMPERATURE
(
)
Figure 23. Unclamped Inductive
Switching Capability
F ig ure 24 . Ma ximum
C on tin uo us
D rain
Current vs
Ambient Temperature
1000
30
V
GS
= -10 V
100 us
10
100
10
1 ms
SINGLE PULSE
R
θ
JA
= 135
o
C/W
THIS AREA IS
LIMITED BY r
ds(on)
1
10 ms
100 ms
SINGLE PULSE
0.1
0.01
1 s
T
J
= MAX RATED
R
θ
JA
= 135
o
C/W
25
o
T
A
=
C
10 s
DC
1
0.5
10
-4
10
-3
10
-2
t, PULSE WIDTH (sec)
10
-1
1
10
100 1000
0.01
0.1
1
10
100
200
-V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 25. Forward Bias Safe
Operating Area
Figure 26. Single Pulse
Maximum Power
Dissipation
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
8
Typical Characteristics (Q2 P-Channel)
T
J
= 25 °C unless otherwise noted
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.05
0.02
0.01
DM
t
1
t
2
0.01
0.001
SINGLE PULSE
R
θ
JA
= 135
o
C/W
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T
= P
J
x Z
x R
+ T
θ
JA
A
DM
θ
JA
(
Note 1b
)
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 27. Junction-to-Ambient Transient Thermal Response Curve
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
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