onsemi-FDS4935A
| Part # | onsemi-FDS4935A |
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MOSFET
– Dual, P-Channel,
POWERTRENCH
30 V
FDS4935A
General Description
This P
−
C
hannel MOSFET is a rugged gate version
of ON Semiconductor’s advanced POWERTRENCH
process. It has
been optimized for power management applications requiring a wide
range of gave drive voltage ratings (4.5 V – 20 V).
®
D1
D1
D2
D2
Features
•
−
7 A,
−
30
V
. R
G1
S1
G2
S2
= 23 m
W
@ V
=
−
10 V
GS
= 35 m
W
@ V
=
−
4.5 V
GS
DS(ON)
R
DS(ON)
SOIC8
CASE 751EB
•
Low Gate Charge (15 nC Typical)
•
Fast Switching Speed
•
High Performance Trench Technology for Extremely Low R
•
High Power and Current Handling Capability
•
This is a Pb
−
Free Device
DS(ON)
MARKING DIAGRAM
FDS4935A
ALYW
Features
•
Power Management
•
Load Switch
FDS4935A
A
L
YW
= Specific Device Code
= Assembly Site
= Wafer Lot Number
= Assembly Start Week
•
Battery Protection
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
A
Symbol
Parameter
Drain
−
Source Voltage
Gate
−
Source Voltage
Ratings
−
30
Unit
V
ELECTRICAL CONNECTION
V
DS
V
GSS
20
V
5
6
7
8
4
3
2
1
I
D
−
Pulsed
−
7
−
30
A
Q1
Q2
P
P
Power Dissipation for Dual Operation
2
W
W
D
Power Dissipation
for Single Operation
1.6
1
0.9
D
T , T
Operating and Storage Junction
T
e
mperature Range
−
55 to +150
°
C
J
STG
ORDERING INFORMATION
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance, Junction to
78
°
C/W
q
JA
R
Thermal Resistance, Junction to
40
°
C/W
q
JC
©
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
May, 2021
−
Rev. 1
FDS4935A/D
FDS4935A
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain
−
Source Breakdown Voltage
V
I
= 0
V
, I
=
−
250
m
A
−
30
−
−
−
V
DSS
GS
D
Breakdown Voltage
T
e
mperature Coefficient
=
−
250
m
A, Referenced to 25
°
C
−
−
24
mV/
°
C
D
BV
DSS
D
T
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
GS
V
GS
=
−
24
V
, V
= 0 V
−
−
−
−
−
−
−
10
−
100
100
m
A
nA
nA
DSS
GS
I
Gate
−
Body Leakage Current, Forward
Gate
−
Body Leakage Current, Reverse
=
−
20
V
, V
= 0 V
DS
GSSF
GSSR
I
= 20
V
, V
= 0 V
DS
V
Gate Threshold Voltage
V
I
= V
, I
=
−
250
m
A
−
1
−
1.6
−
3
V
GS(th)
DS
GS
D
Gate Threshold Voltage
T
e
mperature Coefficient
=
−
250
m
A, Referenced to 25
°
C
−
4.4
−
mV/
°
C
D
V
GS(th)
D
T
J
D
R
Static Drain
−
Source On
−
Resistance
V
GS
V
GS
V
GS
=
−
10
V
, I
=
−
7 A
−
−
−
19
28
26
23
35
34
m
W
DS(on)
D
=
−
4.5
V
, I
=
−
5.5 A
D
=
−
10
V
, I
=
−
7 A, T
= 125
°
C
D
J
I
On
−
State drain Current
V
GS
V
DS
=
−
10
V
, V
=
−
5 V
−
30
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
=
−
5
V
, I
=
−
7 A
−
19
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
=
−
15
V
, V
= 0 V
−
−
−
1233
311
−
−
−
pF
pF
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
152
rss
t
Turn
−
On Delay Time
Turn
−
On Rise Time
Turn
−
Off Delay Time
Turn
−
Off Fall Time
T
o
tal Gate Charge
Gate
−
Source Charge
Gate
−
Drain Charge
V
V
=
−
15
V
, I
=
−
1 A
−
−
−
−
−
−
−
13
10
48
25
15
4.4
4.5
23
20
77
40
21
−
ns
ns
d(on)
DD
GS
D
=
−
10
V
, R
= 6
W
GEN
t
r
t
ns
d(off)
t
f
ns
Q
V
DS
V
GS
=
−
15
V
, I
=
−
7 A
nC
nC
nC
g
D
=
−
5 V
Q
gs
gd
Q
−
DRAIN
−
SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain
−
Source Diode Forward Current
I
−
−
−
−
2.1
−
1.2
A
V
S
V
SD
V
GS
−
0.75
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction
−
to
−
case and case
−
to
−
ambient resistance where the case thermal reference is defined as the solder mounting
q
JA
surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
b) 125
°
C/W when
mounted on a 0.02 in
pad of 2 oz. copper.
a) 78
°
C/W when
c) 135
°
C/W when mounted
on a minimum pad.
2
2
mounted on a 0.5 in
pad of 2 oz. Copper.
2. Pulse
T
e
st Pulse Width < 300
m
s, Duty Cycle < 2.0%
2
FDS4935A
TYPICAL CHARACTERISTICS
2.4
2.2
50
40
V
=
−
10 V
−
5.0 V
−
4.5 V
GS
−
6.0 V
V
GS
=
−
3.5 V
2
1.8
1.6
1.4
−
4.0 V
30
20
−
4.0 V
−
3.5 V
−
4.5 V
−
5.0 V
−
6.0 V
−
3.0 V
1.2
1
10
0
−
10 V
0.8
0
1
2
3
4
5
0
10
20
30
40
50
−
I ,
DRAIN CURRENT (A)
D
−
V ,
DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1. On
−
Region Characteristics
Figure 2. On
−
Resistance Variation with Drain
Current and Gate Voltage
1.6
1.4
1.2
1
0.08
0.06
0.04
0.02
0
V
=
−
10 V
=
−
7 A
GS
I
D
=
−
3.5 A
I
D
T
A
= 125
°
C
0.8
T =
25
°
C
A
0.6
−
50
2
4
6
8
10
−
25
0
25
50
75
100
125
150
−
V ,
GATE TO SOURCE VOLTAGE (V)
GS
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 4. On
−
Resistance Variation with
Gate
−
to
−
Source Voltage
Figure 3. On
−
Resistance Variation with Temperature
100
10
50
V
= 0 V
GS
V
=
−
5 V
DS
T
A
=
−
55
°
C
25
°
C
40
30
20
10
0
T
A
= 125
°
C
1
0.1
125
°
C
25
°
C
−
55
°
C
0.01
0.001
0.0001
1.4
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
−
V ,
GATE TO SOURCE VOLTAGE (V)
GS
−
V ,
BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
3
FDS4935A
TYPICAL CHARACTERISTICS
(continued)
10
8
2000
V
=
−
5 V
f = 1 MHz
= 0 V
DS
I
D
=
−
8.8 A
1800
1600
1400
1200
1000
800
600
400
200
0
V
−
10 V
GS
−
15 V
C
ISS
6
4
2
C
OSS
C
RSS
0
0
5
10
15
20
25
30
0
4
8
12
16
20
24
−
V ,
DRAIN TO SOURCE VOLTAGE (V)
DS
Q ,
GATE CHARGE (nC)
g
Figure 8. Capacitance Characteristics
Figure 7. Gate
−
Charge Characteristics
100
10
50
40
30
20
10
0
100
m
s
R
DS(ON)
LIMIT
SINGLE PULSE
R
T
= 135
°
C/W
JA
= 25
°
C
q
1 ms
10 ms
A
100 ms
1 s
10 s
1
DC
V
=
−
10 V
GS
0.1
0.01
SINGLE PULSE
R
T
= 135
°
C/W
q
JA
= 25
°
C
A
10
0
1
10
100
0.001
0.01
0.1
1
100
−
V ,
DRAIN
−
SOURCE VOLTAGE (V)
DS
, TIME (sec)
t1
Figure 10. Single Pulse Maximum Power Dissipation
Figure 9. Maximum Safe Operating Area
1
D = 0.5
0.2
R
R
(t) = r(t) * R
= 135
°
C/W
0.1
0.1
q
JA
q
JA
q
JA
0.05
0.02
0.01
P(pk)
0.01
t
1
t
2
T
−
T =
P * R
q
JA
(t)
J
A
Single Pulse
Duty Cycle, D = t
/ t
1
2
0.001
0.1
1
10
1000
0.0001
0.001
0.01
100
Figure 11. Transient Thermal Response Curve
Transient thermal response will change depending on the circuit board design.
4
FDS4935A
ORDERING INFORMATION
†
Device Marking
Device
FDS4935A
Package Type
Reel Size
Tape Width
Shipping
FDS4935A
SOIC8
(Pb
−
Free)
13”
12 mm
2500 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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©
Semiconductor Components Industries, LLC, 2019
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onsemi
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