onsemi-FDS4935BZ
| Part # | onsemi-FDS4935BZ |
Download  | onsemi-FDS4935BZ |
September 2006
tm
FDS4935BZ
Dual 30 Volt P-Channel PowerTrench
MOSFET
General Description
Features
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
x
–6.9 A, –30 V.
R
DS(ON)
= 22 m
:
@ V
GS
= –10 V
R
DS(ON)
= 35 m
:
@ V
GS
= – 4.5 V
x
Extended V
GSS
range (–25V) for battery applications
x
ESD protection diode (note 3)
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
x
High performance trench technology for extremely
low R
DS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
x
High power and current handling capability
D1
5
6
7
8
4
3
2
1
D1
D2
Q1
Q2
D2
G1
SO-8
S1
G2
S2
Pin 1
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DS
Parameter
Drain-Source Voltage
Ratings
–30
Units
V
V
GS
I
D
Gate-Source Voltage
+25
–6.9
V
A
Drain Current
– Continuous
– Pulsed
(Note 1a)
–50
P
D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1.6
W
1.0
(Note 1c)
0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
q
C
Thermal Characteristics
R
T
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
40
q
C/W
q
C/W
Thermal Resistance, Junction-to-Case
R
T
JC
Package Marking and Ordering Information
Reel Size
Device Marking
Device
Tape width
Quantity
FDS4935BZ
FDS4935BZ
13’’
12mm
2500 units
FDS4935BZ Rev B1 (W)
2006 Fairchild Semiconductor Corporation
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
–30
V
V
GS
= 0 V,
I
D
= –250
P
A
‘
BV
DSS
ꢀꢀꢀ’
T
J
I
DSS
Breakdown Voltage Temperature
Coefficient
24
I
D
= –250
P
A,Referenced to 25
q
C
mV/
q
C
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
DS
= –24 V,
V
GS
= 0 V
V
GS
= +25 V,
V
DS
= 0 V
–1
P
A
P
A
I
GSS
+10
On Characteristics
V
GS(th)
(Note 2)
Gate Threshold Voltage
–1
–1.9
–5
–3
V
V
DS
= V
GS
, I
D
= –250
P
A
‘
V
GS(th)
ꢀꢀꢀ’
T
J
r
DS(on)
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250
P
A,Referenced to 25
q
C
mV/
q
C
m
:
Static Drain–Source
On–Resistance
V
GS
= –10 V,
I
D
= –6.9 A
18
27.5
26
22
35
34
V
GS
= –4.5 V,
I
D
= –5.3 A
V
GS
= –10 V, I
D
= –6.9A,T
J
=125
q
C
V
DS
= –5 V,
I
D
= –6.9 A
g
FS
Forward Transconductance
22
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
1360
240
pF
pF
pF
V
DS
= –15 V,
V
GS
= 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
200
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
12
13
68
38
29
16
4
22
23
ns
ns
V
DD
= –15 V,
I
D
= –1 A,
V
GS
= –10 V,
R
GEN
= 6
:
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
108
61
ns
ns
Q
g(TOT)
Q
g(TOT)
Q
gs
Total Gate Charge, V
GS
= 10V
Total Gate Charge, V
GS
= 5V
Gate–Source Charge
Gate–Drain Charge
40
nC
nC
nC
nC
V
DS
= –15 V,
I
D
= –6.9 A,
GS
= –10 V
V
23
Q
gd
7
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–2.1
–1.2
A
V
V
SD
V
GS
= 0 V,
I
S
= –2.1 A
(Note 2)
–0.8
t
RR
I
F
= –8.8 A,
Reverse Recovery Time
24
9
ns
d
iF
/d
t
= 100 A/µs
(Note 2)
Q
RR
Reverse Recovery Charge
nC
Notes:
1.
R
T
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
T
JC
is guaranteed by design while R
T
CA
is determined by the user’s board design.
a) 78°C/W
steady state
when mounted on a
1in
2
pad of 2 oz
copper
b) 125°C/W
when
mounted on a .04 in
2
pad of 2 oz copper
c) 135°C/W
when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
P
s, Duty Cycle < 2.0%
3.
The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS4935BZ Rev B1 (W)
Typical Characteristics
50
3
2.6
2.2
1.8
1.4
1
V
GS
= -10V
-6.0V
-5.0V
V
GS
= -3.5V
-4.5V
40
30
20
10
0
-4.0V
-4.0V
-4.5V
-5.0V
-3.5V
-6.0V
-8.0V
-10V
-3.0V
0.6
0
10
20 30
-I
D
, DRAIN CURRENT (A)
40
50
0
1
2
3
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
0.06
0.04
0.02
0
1.6
1.4
1.2
1
I
D
= -8.8A
I
D
= -4.4A
V
GS
= -10V
T
A
= 125
o
C
T
A
= 25
o
C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
2
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
V
GS
= 0V
V
DS
= -5V
10
40
30
20
10
0
T
A
= 125
o
C
1
0.1
25
o
C
-55
o
C
T
A
= 125
o
C
-55
o
C
0.01
0.001
25
o
C
2
2.5
3
-V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
4
4.5
5
0
0.4
-V
SD
, BODY
DIODE FORWARD VOLTAGE (V)
0.8
1.2
1.6
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4935BZ Rev B1 (W)
Typical Characteristics
2000
1600
1200
800
400
0
10
f = 1 MHz
GS
= 0 V
I
D
= -8.8A
V
8
C
iss
V
DS
= -10V
-20V
6
-15V
4
C
oss
2
0
C
rss
0
5
10
15
20
25
30
0
6
12
18
24
Q
g
, GATE CHARGE (nC)
30
36
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
R
T
JA
= 125°C/W
T
A
= 25°C
R
DS(ON)
LIMIT
100 s
P
1ms
10ms
100ms
1s
1
DC
V
GS
= -10V
SINGLE PULSE
R
T
JA
= 125
o
C/W
0.1
T
A
= 25
o
C
0.01
0.01
0.1
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
10
100
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
T
JA
(t) = r(t) * R
T
JA
R
T
JA
= 125
o
C/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t
1
0.01
t
2
J
– T
A
= P * R
T
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
T
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4935BZ Rev B1 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
®
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PowerTrench
®
QFET
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
