onsemi-FDS6162N7

May 2003  

FDS6162N7  



20V N-Channel PowerTrench

 

MOSFET  

General Description  

Features  

This N-Channel MOSFET has been designed  

specifically to improve the overall efficiency of DC/DC  

converters using either synchronous or conventional  

switching PWM controllers.

 

It has been optimized for  

“low side” synchronous rectifier operation, providing an  

extremely low R

DS(ON)

in a small package.  

•

23 A, 20 V  

R

DS(ON)

= 3.5 m

Ω

@ V

GS

= 4.5 V  

R

DS(ON)

= 5.0 m

Ω

@ V

GS

= 2.5 V  

•

High performance trench technology for extremely  

low R

DS(ON)  

Applications  

•

High power and current handling capability  

•

Fast switching  

•

Synchronous rectifier  

•

DC/DC converter  

•

FLMP SO-8 package:

 

Enhanced thermal  

performance in industry-standard package size  

Bottom-side  

Drain Contact  

5

6

7

8

4

3

2

1

Absolute Maximum Ratings

 

T

A

=25

o

C unless otherwise noted  

Symbol  

Parameter  

Ratings  

Units  

V

DSS  

Drain-Source Voltage  

20  

±

12  

V

V

A

V

GSS  

I

D  

Gate-Source Voltage  

Drain Current

 

– Continuous  

– Pulsed  

(Note 1a)  

(Note 1a)  

23  

60  

3.0  

Power Dissipation  

P

D  

W

T

J

, T

STG  

Operating and Storage Junction Temperature Range  

–55 to +150  

°

C  

Thermal Characteristics  

Thermal Resistance, Junction-to-Ambient  

Thermal Resistance, Junction-to-Case  

(Note 1a)  

40  

0.5  

R

θ

JA  

R

θ

JC  

°

C/W  

Package Marking and Ordering Information  

Device Marking  

Device  

Reel Size  

Tape width  

Quantity  

FDS6162N7  

FDS6162N7  

13’’  

12mm  

2500 units  

FDS6162N7 Rev

 

C2 (W)  



2002 Fairchild Semiconductor Corporation  

Electrical Characteristics  

T

A

= 25°C unless otherwise noted  

Symbol  

Parameter  

Test Conditions  

Min Typ Max

 

Units  

Off Characteristics  

Drain–Source Breakdown  

20  

V

V

GS

= 0 V,  

I

D

= 250

µ

A  

BV

DSS  

Voltage  

∆

BV

DSS  

Breakdown Voltage Temperature  

13  

I

D

= 250

µ

A, Referenced to 25

°

C  

mV/

°

C  

Coefficient  

∆

T

J  

I

DSS  

I

GSSF  

I

GSSR  

Zero Gate Voltage Drain Current

 

V

DS

= 16 V,  

V

GS

= 0 V  

V

DS

= 0 V  

V

DS

= 0 V  

1

µ

A  

nA  

nA  

Gate–Body Leakage, Forward  

Gate–Body Leakage, Reverse  

V

GS

= 12 V,  

V

GS

= –12 V ,  

100  

–100  

On Characteristics  

(Note 2)  

V

GS(th)  

Gate Threshold Voltage  

0.6  

0.9  

–4  

1.5  

V

V

DS

= V

GS  

I

D

= 250

µ

A, Referenced to 25

°

C  

,

I

D

= 250

µ

A  

∆

V

GS(th)  

Gate Threshold Voltage  

mV/

°

C  

Temperature Coefficient  

Static Drain–Source  

On–Resistance  

∆

T

J  

R

DS(on)  

V

GS

= 4.5 V,  

V

GS

= 2.5 V,  

I

D

= 23 A  

I

D

= 19 A  

2.9  

3.6  

4.1  

3.5  

5.0  

6.2  

m

Ω  

V

GS

= 4.5 V,

 

I

D

= 23 A,T

J

= 125

°

C  

g

FS  

Forward Transconductance  

V

DS

= 5 V,  

I

D

= 23 A  

119  

S

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

R

G  

Input Capacitance  

5521  

1473  

706  

pF  

pF  

pF  

Ω

V

V

GS

= 0 V,  

Output Capacitance  

Reverse Transfer Capacitance  

Gate Resistance  

f = 1.0 MHz  

V

GS

= 15 mV,  

f = 1.0 MHz  

1.3  

Switching Characteristics

 

(Note 2)  

V

DD

= 10 V,  

I

D

= 1 A,  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn–On Delay Time  

Turn–On Rise Time  

Turn–Off Delay Time  

Turn–Off Fall Time  

Total Gate Charge  

Gate–Source Charge  

Gate–Drain Charge  

20  

25  

85  

55  

52  

9

32  

40  

136  

88  

ns  

ns  

ns  

V

GS

= 4.5

 

V,  

R

GEN

= 6

Ω  

ns  

V

DS

= 10 V,  

V

GS

= 4.5 V  

I

D

= 23 A,  

Q

g  

Q

gs  

Q

gd  

73  

nC  

nC  

nC  

14.5  

Drain–Source Diode Characteristics and Maximum Ratings  

I

S  

Maximum Continuous Drain–Source Diode Forward Current  

2.5  

1.2  

A

V

Drain–Source Diode Forward  

V

GS

= 0 V,

 

I

S

= 2.5 A  

(Note 2)  

0.6  

V

SD  

t

rr  

Voltage  

Diode Reverse Recovery Time  

Diode Reverse Recovery Charge  

I

F

= 23 A,  

d

iF

/d

t

= 100 A/µs  

42  

52  

nS  

nC  

Q

rr  

Notes:  

1.

R

θ

JA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of  

the drain pins.

 

R

θ

JC

is guaranteed by design while R

θ

CA

is determined by the user’s board design.  

a)  

40°C/W when  

b)  

85°C/W when mounted on  

a minimum pad of 2 oz  

copper  

mounted on a 1in

2

pad  

of 2 oz copper  

Scale 1 : 1 on letter size paper  

2.

Pulse Test: Pulse Width < 300

µ

s, Duty Cycle < 2.0%  

FDS6162N7 Rev C2 (W)  

Typical Characteristics  

60  

2

1.8  

1.6  

1.4  

1.2  

1

V

GS

=4.5V  

3.0V  

2.5V  

2.0V  

50  

40  

30  

20  

10  

0

V

GS

= 2.0V  

2.5V  

3.0V  

30  

3.5V  

4.5V  

1.5V  

0.8  

0.00  

0.25  

0.50  

0.75  

1.00  

1.25  

150  

2

0

15  

45  

60  

V

DS

, DRAIN-SOURCE VOLTAGE (V)  

I

D

, DRAIN CURRENT (A)  

Figure 1. On-Region Characteristics.  

Figure 2. On-Resistance Variation with  

Drain Current and Gate Voltage.  

0.012  

1.6  

I

D

= 23 A  

I

D

= 11.5 A  

V

GS

= 4.5V  

0.01  

0.008  

0.006  

0.004  

0.002  

1.4  

1.2  

1

T

A

= 125

o

C  

T

A

= 25

o

C  

0.8  

0.6  

-50  

-25  

0

25  

50  

75  

100  

125  

1

2

3

4

5

T

J

, JUNCTION TEMPERATURE (

o

C)  

V

Figure 3. On-Resistance Variation  

withTemperature.  

Figure 4. On-Resistance Variation with  

Gate-to-Source Voltage.  

100  

60  

50  

40  

30  

20  

10  

0

V

GS

= 0V  

V

DS

= 5V  

10  

1

T

A

= 125

o

C  

25

o

C  

0.1  

-55

o

C  

0.01  

0.001  

0.0001  

T

A

=125

o

C  

25

o

C  

-55

o

C  

1

1.2  

1.4  

1.6  

1.8  

0

0.2  

0.4  

0.6  

0.8  

1

V

GS

, GATE TO SOURCE VOLTAGE (V)  

V

SD

, BODY DIODE FORWARD VOLTAGE (V)  

Figure 5. Transfer Characteristics.  

Figure 6. Body Diode Forward Voltage Variation  

with Source Current and Temperature.  

FDS6162N7 Rev C2 (W)  

Typical Characteristics  

8000  

6000  

4000  

2000  

0

5

V

DS

= 5V  

f = 1MHz  

I

D

= 23 A  

V

10V  

4

3

2

1

0

15V  

C

ISS  

C

OSS  

C

RSS  

0

5

10  

15  

20  

0

10  

20  

30  

40  

50  

60  

V

DS

, DRAIN TO SOURCE VOLTAGE (V)  

Q

g

, GATE CHARGE (nC)  

Figure 7. Gate Charge Characteristics.  

Figure 8. Capacitance Characteristics.  

1000  

100  

10  

50  

SINGLE PULSE  

R

T

A

= 25°C  

R

DS(ON)

LIMIT  

40  

30  

20  

10  

0

100µs  

1ms  

10ms  

100ms  

1s  

10s  

DC  

1

V

GS

= 10V  

SINGLE PULSE  

R

T

A

= 25

o

C  

0.1  

0.01  

0.01  

0.1  

1

10  

100  

0.01  

0.1  

1

10  

100  

1000  

V

DS

, DRAIN-SOURCE VOLTAGE (V)  

t

1

, TIME (sec)  

Figure 9. Maximum Safe Operating Area.  

Figure 10. Single Pulse Maximum  

Power Dissipation.  

1.00  

D = 0.5  

R

R

0.2  

0.1  

0.10  

0.05  

P(pk)  

0.02  

t

1  

0.01  

t

2  

0.01  

T

Duty Cycle, D = t

1

/ t

2  

SINGLE PULSE  

0.00  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

1000  

t

1

, TIME (sec)  

Figure 11. Transient Thermal Response Curve.  

Thermal characterization performed using the conditions described in Note 1b.  

Transient thermal response will change depending on the circuit board design.  

FDS6162N7 Rev C2 (W)  

Dimensional Outline and Pad Layout  

FDS6162N7 Rev C2 (W)  

TRADEMARKS  

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  

not intended to be an exhaustive list of all such trademarksꢀ  

ACEx™  

PACMAN™  

POP™  

Power247™  

PowerTrench  

QFET™  

QS™  

SPM™  

Stealth™  

SuperSOT™-3  

SuperSOT™-6  

SuperSOT™-8  

ImpliedDisconnect™  

ISOPLANAR™  

LittleFET™  

MicroFET™  

MicroPak™  

MICROWIRE™  

MSX™  

FACT™  

ActiveArray™  

Bottomless™  

CoolFET™  

CROSSVOLT

™  

DOME™  

EcoSPARK™  

E

2

CMOS

TM  

EnSigna

TM  

FACT Quiet Series™  

â

FAST  

â

FASTr™  

FRFET™  

GlobalOptoisolator™  

GTO™  

HiSeC™  

I

2

C™  

SyncFET™  

â

QT Optoelectronics™

 

TinyLogic  

Quiet Series™  

RapidConfigure™  

RapidConnect™  

TruTranslation™  

UHC™  

UltraFET  

MSXPro™  

OCX™  

â

OCXPro™  

OPTOLOGIC  

Across the board

ꢀ

A

round the worldꢀ™  

The Power Franchise™  

Programmabl

e

A

ctive Droop™  

â

â

SILENT SWITCHER

 

VCX™  

SMAR

T

S

TART™  

OPTOPLANAR™  

DISCLAIMER  

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  

NOTICE T

O

A

NY PRODUCTS HEREIN TO IMPROVE RELIABILIT

Y

,

F

UNCTION OR DESIGNꢀ FAIRCHILD  

DOES NO

T

A

SSUM

E

A

NY LIABILIT

Y

A

RISING OUT OF TH

E

A

PPLICATION OR USE O

F

A

NY PRODUCT  

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  

RIGHTS, NOR THE RIGHTS OF OTHERSꢀ  

LIFE SUPPORT POLICY  

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  

DEVICES OR SYSTEMS WITHOU

T

T

HE EXPRESS WRITTE

N

A

PPROVA

L

O

F FAIRCHILD SEMICONDUCTOR CORPORATIONꢀ  

As used herein:  

1ꢀ Life support devices or systems are devices or  

systems which, (a) are intended for surgical implant into  

the body, or (b) support or sustain life, or (c) whose  

failure to perform when properly used in accordance  

with instructions for use provided in the labeling, can be  

reasonably expected to result in significant injury to the  

userꢀ  

2ꢀ A critical component is any component of a life  

support device or system whose failure to perform can  

be reasonably expected to cause the failure of the life  

support device or system, or to affect its safety or  

effectivenessꢀ  

PRODUCT STATUS DEFINITIONS  

Definition of Terms  

Datasheet Identification  

Product Status  

Definition  

Advance Information  

Formative or  

In Design  

This datasheet contains the design specifications for  

product developmentꢀ Specifications may change in  

any manner without noticeꢀ  

Preliminary  

First Production  

This datasheet contains preliminary data, and  

supplementary data will be published at a later dateꢀ  

Fairchild Semiconductor reserves the right to make  

changes at any time without notice in order to improve  

designꢀ  

No Identification Needed  

Obsolete  

Full Production  

This datasheet contains final specificationsꢀ Fairchild  

Semiconductor reserves the right to make changes at  

any time without notice in order to improve designꢀ  

Not In Production  

This datasheet contains specifications on a product  

that has been discontinued by Fairchild semiconductorꢀ  

The datasheet is printed for reference information onlyꢀ  

Revꢀ I2