onsemi-FDS6670S
| Part # | onsemi-FDS6670S |
Download  | onsemi-FDS6670S |
August 2001
FDS6670S
30V N
–
Channel PowerTrench
Ò
SyncFET
™
General Description
Features
The FDS6670S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies.
This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge.
The FDS6670S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
·
13.5 A, 30 V.
R
DS(ON)
= 9 m
W
@ V
GS
= 10 V
R
DS(ON)
= 12.5 m
W
@ V
GS
= 4.5 V
·
·
·
Includes SyncFET Schottky body diode
Low gate charge (24nC typical)
High performance trench technology for extremely low
R
DS(ON)
and fast switching
Applications
·
High power and current handling capability
·
·
DC/DC converter
Motor drives
D
D
5
6
7
8
4
3
2
1
D
D
G
S
S
SO-8
S
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
V
30
V
GSS
I
D
Gate-Source Voltage
V
A
±
20
13.5
50
Drain Current
– Continuous
– Pulsed
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
2.5
W
1.2
1
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
50
25
R
q
JA
°
C/W
°
C/W
Thermal Resistance, Junction-to-Case
R
q
JC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6670S
FDS6670S
13’’
12mm
2500 units
FDS6670S Rev E (W)
Ó
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
= 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1 mA
30
V
D
BV
DSS
D
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 1 mA, Referenced to 25
°
C
24
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= 0 V
V
DS
= 0 V
500
100
m
A
nA
nA
I
GSSF
I
GSSR
V
GS
= –20 V,
V
DS
= 0 V
–100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
1
2.2
3
V
D
V
GS(th)
D
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 1 mA, Referenced to 25
°
C
–6.2
mV/
°
C
m
W
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V,
V
GS
= 4.5 V,
I
D
= 13.5 A
I
D
= 11.2 A
7
9.5
9
9
12.5
12.5
V
GS
=10 V, I
D
=13.5A, T
J
=100
°
C
I
D(on)
g
FS
On–State Drain Current
V
GS
= 10 V,
V
DS
= 10 V,
V
DS
= 5 V
50
A
S
Forward Transconductance
I
D
= 13.5 A
45
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
2674
751
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
254
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
11
10
44
23
20
20
70
37
34
ns
ns
ns
ns
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
W
t
r
t
d
(
off
)
t
f
Q
g
Total Gate Charge
24
nC
nC
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 13.5 A,
Q
g
s
Gate–Source Charge
7.3
Q
gd
Gate–Drain Charge
6
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
3.5
0.7
A
V
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 3.5 A
V
GS
= 0 V,
I
S
= 7 A
I
F
= 13.5A,
(Note 2)
(Note 2)
0.4
0.5
t
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
26.8
nS
nC
d
iF
/d
t
= 300 A/µs
(Note 3)
Q
rr
47.2
Notes:
1.
R is
the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
q
JA
the drain pins.
R
is guaranteed by design while R
is determined by the user’s board design.
q
CA
q
JC
a) 50°C/W
when
mounted on a 1 i
n
2
pad of 2 oz copper
b) 105°C/W
when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W
when mounted on a
minimum pad.
FDS6670S Rev E (W)
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
FDS6670S Rev E (W)
Typical Characteristics
2.6
2.2
1.8
1.4
1
50
V
G
S
= 10V
4.5V
6.0V
40
4.0V
V
GS
= 3.5V
3.5V
30
20
10
0
4.0V
4.5V
6.0V
3.0V
10V
0.6
0
0.5
1
1.5
2
0
10
20
30
40
50
V
D
S
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.025
I
D
= 13.5A
V
G
S
= 10V
I
D
= 6.8A
0.02
0.015
0.01
T
A
= 125
o
C
0.8
0.6
T
A
= 25
o
C
0.005
-50
-25
0
25
50
75
100
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
G
S
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
70
60
50
40
30
20
10
0
25
o
C
V
G
S
= 0V
T
A
= 125
o
C
T
A
= -55
o
C
V
DS
= 5V
125
o
C
1
0.1
25
o
C
-55
o
C
0.01
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
2
2.5
3
3.5
4
4.5
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
G
S
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6670S Rev E (W)
Typical Characteristics
(continued)
10
3600
3000
2400
1800
1200
600
f = 1MHz
V
G
S
= 0 V
I
D
=13.5A
V
D
S
= 5V
10V
8
6
4
2
0
C
ISS
15V
C
OSS
C
RSS
0
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
V
D
S
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
R
q
JA
= 125°C/W
T
A
= 25°C
m
100
1ms
10ms
100ms
1s
10s
s
R
DS(ON)
LIMIT
1
DC
V
GS
= 10V
SINGLE PULSE
0.1
0.01
R
q
JA
= 125
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
q
J
A
(t) = r(t) + R
q
JA
0.2
R
q
JA
= 125 °C/W
0.1
0.1
0.05
0.02
P(pk)
t
1
t
2
0.01
0.01
T
J
– T
A
= P * R
q
JA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6670S Rev E (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET.
This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET.
Figure 12 shows the
reverse recovery characteristic of the FDS6670S.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage.
This will increase
the power in the device.
0.1
100
o
C
0.01
0.001
25
o
C
0.0001
0.00001
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
Time: 10.0ns/div
Figure 12. FDS6670S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6670A).
Time: 10.0ns/div
Figure 13. Non-SyncFET (FDS6670
A
)
b
ody
diode reverse recovery characteristic.
FDS6670S Rev E (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
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CoolFET™
OPTOLOGIC™
OPTOPLANAR™
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FRFET™
SuperSOT™-3
SuperSOT™-6
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GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOL
T
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DenseTrench™
DOME™
POP™
Power247™
PowerTrenc
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â
QFET™
EcoSPARK™
E
2
CMOS
TM
TinyLogic™
QS™
EnSigna
TM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILEN
T
S
WITCHE
R
â
FACT™
FACT Quiet Series™
UltraFE
T
â
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILIT
Y
A
RISING OUT OF THE APPLICATION OR USE O
F
A
NY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICE
S
O
R
S
YSTEM
S
W
ITHOU
T
T
H
E
E
XPRES
S
W
RITTE
N
A
PPROVA
L
O
F
F
AIRCHIL
D
S
EMICONDUCTO
R
C
ORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
