onsemi-FDS6673AZ
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April 2005
FDS6673AZ
30 Volt P-Channel PowerTrench
®
MOSFET
Features
General Description
■
–14.5 A, –30
V
.
R
R
= 7.2 m
Ω
@ V
= –10 V
This P-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers, and
battery chargers.
DS(ON)
DS(ON)
GS
= 11 m
Ω
@ V
= – 4.5 V
GS
■
Extended V
range (–25V) for battery applications
GSS
■
ESD protection diode (note 3)
These MOSFETs feature faster switching and lower gate
■
High performance trench technology for extremely low
charge than other MOSFETs with comparable R
cations.
specifi-
R
DS(ON)
DS(ON)
■
High power and current handling capability
The result is a MOSFET that is easy and safer to drive (even at
very high frequencies), and DC/DC power supply designs with
higher overall efficienc
y
.
D
D
5
6
7
8
4
3
2
1
D
D
G
S
S
SO-8
S
Absolute Maximum Ratings
T =
25°C unless otherwise noted
A
Symbol
Parameter
Ratings
–30
Units
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
V
V
A
DSS
GSS
V
+25
I
(Note 1a)
–14.5
–50
D
P
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
W
D
1.2
1.0
T , T
Operating and Storage Junction
T
e
mperature Range
–55 to +175
°
C
J
STG
Thermal Characteristics
R
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°
C/W
°
C/W
θ
JA
θ
JC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6673AZ
FDS6673AZ
13’’
12mm
2500 units
©2005 Fairchild Semiconductor Corporation
FDS6673AZ Rev. C(W)
1
Electrical Characteristics
T =
25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
V
I
= 0
V
, I
=
–
250
µ
A
–30
V
DSS
GS
D
∆
BV
DSS
∆
T
Breakdown Voltage
T
e
mperature
Coefficient
= –250
µ
A, Referenced to 25
°
C
–25
mV/
°
C
D
J
I
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
V
= –24
V
, V
= 0 V
–1
10
µ
A
µ
A
DSS
DS
GS
I
=
20
V
, V
= 0 V
GSS
GS
DS
On Characteristics
(Note 2)
Gate Threshold Voltage
V
V
I
= V
, I
= –250
µ
A
–1
–1.6
5.8
–3
V
GS(th)
DS
GS
D
∆
V
GS(th)
Gate Threshold Voltage
T
e
mperature Coefficient
= –250
µ
A, Referenced to 25
°
C
mV/
°
C
D
∆
T
J
R
Static Drain–Source
On–Resistance
V
V
V
= –10
V
, I
=
–
14.5 A
6.0
8.8
7.8
7.2
11
10.4
m
Ω
DS(on)
GS
D
= –4.5
V
, I
=
–
12 A
GS
GS
D
= –4.5
V
, I
=
–
14.5A, T
= 125
°
C
D
J
g
Forward
T
r
ansconductance
V
= –5
V
, I
=
–
14.5 A
50
S
FS
DS
D
Dynamic Characteristics
C
C
C
R
Input Capacitance
V
= –15
V
, V
= 0 V,
4480
1190
615
pF
pF
pF
iss
oss
rss
G
DS
GS
f = 1.0 MHz
Output Capacitance
Reverse
T
r
ansfer Capacitance
Gate Resistance
V
= 15 m
V
, f =
1
.0 MHz
3.8
GS
Switching Characteristics
(Note 2)
t
t
t
t
T
u
rn–On Delay Time
T
u
rn–On Rise Time
T
u
rn–Off Delay Time
T
u
rn–Off Fall Time
T
o
tal Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= –15
V
, I
=
–
1 A,
22
8
35
16
ns
ns
d(on)
DD
GS
D
= –10
V
, R
= 6
Ω
GEN
r
134
79
84
12
19
214
126
118
ns
d(off)
f
ns
Q
Q
Q
V
V
= –15
V
, I
=
–
14.5 A,
nC
nC
nC
g
DS
GS
D
= –10 V
gs
gd
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
I
–2.1
–1.2
A
V
S
V
Drain–Source Diode Forward Voltage
Reverse Recovery Time
V
= 0
V
, I
=
–
2.1 A
(Note 2)
(Note 2)
–0.7
44
SD
GS
S
t
I =
–14.5 A,
ns
nC
RR
F
d /d
= 100 A/µs
iF
t
Q
Reverse Recovery Charge
29
RR
Notes:
1.
R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θ
JA
θ
JC
is guaranteed by design while R
is determined by the user’s board design.
θ
CA
a) 50°C/W
(10 sec) 62.5°
C/W steady state when
mounted on a 1 in
pad
b) 105°C/W
when
mounted on a .04 in
pad of 2 oz copper
c) 125°/W
when mounted
on a minimum pad.
2
2
of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse
T
e
st: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
3. The
diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
2
FDS6673AZ Rev. C(W)
Typical Characteristics
80
3.8
3.4
3
V
GS
= -10V
-6.0V
-4.5V
-4.0V
-3.5V
60
40
20
0
V
GS
= – 3.0V
2.6
2.2
1.8
1.4
1
-3.5V
-3.0V
-4.0V
-4.5V
-5.0V
-6.0V
60
-10V
0.6
0
0.5
1
1.5
2
0
20
40
-I
D
, DRAIN CURRENT (A)
80
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.02
0.02
0.02
0.01
0.01
0.00
I
D
= -14.5A
V
GS
= -10V
I
D
= -7.3A
T
A
= 125
o
C
0.9
0.8
0.7
T
A
= 2
5
o
C
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
°
C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
80
60
40
20
0
100
10
V
GS
= 0V
25
°
C
T
A
= -55
°
C
V
DS
= -5V
125
°
·
C
T
A
= 125
°
C
1
25
°
C
0.1
-55
°
C
0.01
0.001
0
0.2
-V
SD
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
,
BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
FDS6673AZ Rev. C(W)
Typical Characteristics
6000
5000
4000
3000
2000
1000
0
10
f = 1 MHz
GS
= 0 V
I
D
= -14.5A
C
ISS
V
V
DS
= -10V
-15V
8
6
4
2
0
-20V
C
OSS
C
RSS
0
10
20
30
40
50
60
70
80
90
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
R
θ
JA
= 125
°
C/W
T
A
= 25
°
C
10
0
µ
s
R
DS(ON)
LIMIT
1ms
10ms
100ms
1s
10s
1
DC
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 125
°
C/W
0.1
T
A
= 25
°
C
0.01
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
t
1
, TIME (sec)
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θ
J
A
(t) = r(t) * R
θ
JA
R
θ
JA
= 125
°
C/W
0.2
0.1
0.1
P(pk)
0.05
0.02
t
1
0.01
t
2
T
J
– T
A
= P * R
Duty Cycle, D = t
1
/t
2
0.01
θ
J
A
(t)
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
4
FDS6673AZ Rev. C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
POP™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT
™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
Power247™
PowerEdge™
PowerSaver™
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
PowerTrench
QFET
QS™
SyncFET™
HiSeC™
I
2
C™
QT Optoelectronics™
TinyLogic
Quiet Series™
RapidConfigure™
RapidConnect™
µ
SerDes™
TINYOPTO™
TruTranslation™
UHC™
MSXPro™
OCX™
i-Lo
™
ImpliedDisconnect™
FACT Quiet Series™
OCXPro™
OPTOLOGIC
UltraFET
Across the board. Around the world.™
SILENT SWITCHER
UniFET™
SMART START™
VCX™
OPTOPLANAR™
PACMAN™
The Power Franchise
Programmabl
e
A
ctive Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVE
S
T
HE RIGH
T
T
O MAKE CHANGES WITHOU
T
F
URTHER NOTIC
E
T
O
A
NY
PRODUCTS HEREI
N
T
O IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD DOES NO
T
A
SSUM
E
A
N
Y
L
IABILITY
ARISING OU
T
O
F
T
H
E
A
PPLICATION OR USE O
F
A
N
Y
P
RODUC
T
O
R CIRCUI
T
D
ESCRIBED HEREIN; NEITHER DOES IT
CONVE
Y
A
N
Y
L
ICENSE UNDER ITS PATEN
T
R
IGHTS, NO
R
T
HE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOU
T
T
HE EXPRESS WRITTE
N
A
PPROVA
L
O
F FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
5
FDS6673AZ Rev. C(W)
