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M
ay
200
8
tm
FDS6690AS
30V N
–
Channel PowerTrench
®
SyncFET
™
General Description
Features
The FDS6690AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies.
This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
•
10 A, 30 V.
R
DS(ON)
max= 12 m
Ω
@ V
GS
= 10 V
R
DS(ON)
max= 15 m
Ω
@ V
GS
= 4.5 V
•
•
•
Includes SyncFET Schottky diode
Low gate charge (16nC typical)
R
DS(ON)
and low gate charge.
The FDS6690AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
The performance of
the FDS6690AS as the low-side switch in
a
synchronous rectifier is close to the performance of the
FDS6690A in parallel with a Schottky diode.
High performance trench technology for extremely low
R
DS(ON)
Applications
•
High power and current handling capability
•
DC/DC converter
•
Low side notebooks
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
Gate-Source Voltage
30
V
V
GSS
I
D
V
A
±
20
Drain Current
– Continuous
– Pulsed
(Note 1a)
10
50
P
D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
2.5
W
1.2
1
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
R
θ
JA
°
C/W
°
C/W
R
θ
JC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6690AS
FDS6690AS
13’’
12mm
2500 units
FDS6690AS Rev A
2
(X)
©
200
8
Fairchild Semiconductor Corporation
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1 mA
30
V
∆
BV
DSS
∆
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 1
0
mA, Referenced to 25
°
C
30
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
DS
= 24 V,
V
GS
= 0 V
V
DS
= 0 V
500
µ
A
I
GSS
nA
V
GS
=
±
20 V,
±
100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
1
1.6
3
V
∆
V
GS(th)
∆
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
I
D
= 1
0
mA, Referenced to 25
°
C
–
4
mV/
°
C
m
Ω
Static Drain–Source
On–Resistance
V
GS
= 10 V,
GS
= 4.5 V,
I
D
= 10 A
I
D
= 8.5 A
10
12
15
12
15
19
V
V
GS
=10 V, I
D
=10A, T
J
=125
°
C
I
D(on)
g
FS
On–State Drain Current
V
GS
= 10 V,
V
DS
= 15 V,
V
DS
= 5 V
I
D
= 10 A
50
A
S
Forward Transconductance
45
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
910
270
100
2.0
pF
pF
pF
Ω
V
DS
= 15 V,
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1.0 MHz
V
GS
= 15 mV,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
8
5
16
10
40
12
20
20
27
16
23
13
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
= 15 V,
I
D
= 1 A,
R
GEN
= 6
Ω
Turn–On Rise Time
V
GS
= 10 V,
Turn–Off Delay Time
Turn–Off Fall Time
25
6
Turn–On Delay Time
Turn–On Rise Time
11
11
15
8
V
DS
= 15 V,
I
D
= 1 A,
R
GEN
= 6
Ω
V
GS
= 4.5 V,
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
16
9
Q
g
Q
g
(TOT)
V
DD
= 15 V,
I
D
= 10 A
Q
gs
Q
gd
2.3
3.0
FDS6690AS Rev A
2
(X)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
3.5
0.7
A
V
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 3.5 A
(Note 2)
(Note 3)
0.6
T
rr
Q
rr
Diode Reverse Recovery Time
I
F
= 10A,
16
9
nS
nC
Diode Reverse Recovery Charge
d
iF
/d
t
= 300 A/µs
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins.
R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user’s board design.
a) 50°/W
when
b) 105°/W
when
c) 125°/W
when mounted on a
minimum pad.
mounted on a 1 in
2
pad of 2 oz copper
mounted on a .04 in
2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
FDS6690AS Rev A
2
(X)
Typical Characteristics
50
2.2
1.8
1.4
1
V
GS
= 4.0V
V
GS
= 10V
4.0V
40
30
20
10
0
6.0V
4.5V
3.5V
4.0V
3.0V
4.5V
5.0V
6.0V
10V
2.5V
0.6
0
10
20
30
40
50
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.06
0.05
0.04
0.03
0.02
0.01
0
1.6
I
D
= 10A
GS
= 10V
I
D
= 5A
V
1.45
1.3
1.15
1
T
A
= 125
o
C
0.85
0.7
T
A
= 25
o
C
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
40
30
20
10
0
10
V
GS
= 0V
V
DS
= 5V
1
T
A
= 125
o
C
25
o
C
0.1
0.01
-55
o
C
T
A
= 125
o
C
-55
o
C
25
o
C
0.001
1
1.5
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6690AS Rev A
2
(X)
Typical Characteristics
1400
1200
1000
800
600
400
200
0
10
f = 1MHz
V
GS
= 0 V
I
D
=10A
8
V
DS
= 10V
C
iss
20V
6
15V
4
C
oss
2
0
C
rss
0
5
10
15
20
25
30
0
3
6
9
12
15
18
21
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
R
DS(ON)
LIMIT
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
100 s
µ
1ms
10ms
100ms
1s
10s
1
DC
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
0.1
0.01
T
A
= 25
o
C
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 125 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t
1
0.01
t
2
0.01
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6690AS Rev A
2
(X)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky
diode in parallel with PowerTrench MOSFET.
This diode exhibits similar characteristics to a
discrete external Schottky diode in parallel with a
MOSFET. Figure
12 shows the reverse recovery
characteristic of the FDS6690AS.
Schottky barrier diodes exhibit significant leakage
at high temperature and high reverse voltage.
This will increase the power in the device.
0.1
0.01
T
A
= 125
o
C
0.001
T
A
= 100
o
C
0.0001
0.00001
T
A
= 25
o
C
0.000001
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/DIV
Figure 12. FDS6690AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the
reverse recovery characteristics of the body diode
of an equivalent size MOSFET produced without
SyncFET (FDS6690A).
0V
10nS/DIV
Figure 13. Non-SyncFET (FDS6690A)
body diode reverse recovery
characteristic.
FDS6690AS Rev A
2
(X)
Typical Characteristics
L
V
DS
BV
DSS
t
P
V
GS
R
GE
V
DS
V
DD
+
–
I
AS
DUT
V
DD
0V
V
GS
vary t
P
to obtain
required peak I
AS
tp
I
AS
0.01
Ω
t
AV
Figure 15. Unclamped Inductive Load Test
Figure 16. Unclamped Inductive
Waveforms
Circuit
Drain Current
Same type as
50k
Ω
10V
+
F
10
µ
–
1
µ
F
+
V
DD
Q
G(TOT)
–
V
GS
10V
V
GS
DUT
Q
GD
Q
GS
I
g(REF
Charge, (nC)
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveform
t
ON
t
d(ON)
t
OFF
t
d(OFF
R
L
t
f
V
DS
t
r
V
DS
)
90%
90%
+
–
V
GS
R
GEN
10%
10%
0V
DUT
V
DD
90%
50%
V
GS
50%
V
GS
Pulse Width
≤
1
µ
s
Duty Cycle
≤
0.1
%
10%
0V
Pulse Width
Figure 19. Switching Time Test
Circuit
Figure 20. Switching Time Waveforms
FDS6690AS Rev A
2
(X)
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HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life
support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2. A
critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I34
FD
S6690AS
Rev.
A2(X)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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−
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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