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T
ypical” parameters which may be provided in
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by customer’s technical experts.
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does not convey any license under any of its intellectual property rights nor the rights of others.
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products are not designed, intended, or authorized
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FDS6890A
Dual N-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
Features
These N-Channel 2.5V specified
MOSFE
T
s
a
re
produced using
ON
Semiconductor’s advanced
PowerTrench process that has
been especially
tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
•
7.5 A, 20 V. R
DS(ON)
= 0.018
Ω
@ V
GS
= 4.5 V
R
DS(ON
= 0.022
Ω
@ V
GS
= 2.5
V
.
)
•
Low gate charge (23nC typical).
•
Fast switching speed.
•
High performance trench technology for extremely
Applications
low R
DS(ON
.
)
•
DC/DC converter
•
Motor drives
•
High power and current handling capability.
D2
D2
4
5
6
7
8
D1
D1
3
2
1
G2
S2
G1
1
pin
S1
SO-8
T
A
=25
o
C unless otherwise noted
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
20
V
V
GSS
I
D
V
A
±
8
7.5
(Note 1a)
20
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2.0
W
(Note 1a)
(Note 1b)
1.6
1.0
(Note 1c)
0.9
Operating and Storage Junction Temperature Range
-55 to +150
°
T
J
, T
stg
C
Thermal Characteristics
(Note 1a)
(Note 1)
Thermal Resistance, Junction-to-Ambient
78
40
90
R
θ
JA
°
C/W
Thermal Resistance, Junction-to-Case
°
R
θ
JC
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS6890A
FDS6890A
13
12mm
2500 units
Publication Order Number:
FDS6890A/D
1999
Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Electrical Characteristics
T
A
= 25 C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
20
V
µ
A
V
GS
= 0 V, I
D
= 250
Breakdown Voltage Temperature
Coefficient
14
∆
DSS
µ
°
°
mV/ C
BV
∆
I
D
= 250
A, Referenced to 25 C
T
J
I
DSS
I
GSSF
Zero Gate Voltage Drain Current
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
1
µ
A
Gate-Body Leakage Current,
Forward
100
nA
I
GSSR
Gate-Body Leakage Current,
Reverse
V
GS
= -8 V, V
DS
= 0 V
-100
1.5
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
0.5
20
0.8
V
µ
A
V
DS
= V
GS
, I
D
= 250
Gate Threshold Voltage
Temperature Coefficient
-3.5
∆
GS(th)
µ
°
°
V
I
D
= 250
A, Referenced to 25 C
mV/ C
∆
T
J
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 4.5 V, I
D
=7.5 A
0.013 0.018
0.021 0.034
0.016 0.022
Ω
°
V
GS
= 4.5 V, I
D
=7.5 A, T
J
=125 C
GS
= 2.5 V, I
D
=6.5 A
V
I
D(on)
g
FS
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
A
S
Forward Transconductance
V
DS
= 5 V, I
D
= 7.5 A
35
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
2130
545
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
270
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
13
26
65
23
23
3.2
4.4
24
42
90
37
32
ns
ns
Ω
ns
ns
Q
g
V
DS
= 10 V, I
D
= 7.5 A,
nC
nC
nC
V
GS
= 4.5 V,
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
1.3
1.2
A
V
(Note 2)
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.3 A
0.65
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user’s board design.
a) 78
°
C/W when
mounted on a 0.5 in
2
pad of 2 oz. copper.
c) 135
°
C/W when
mounted on a minimum pad.
b) 125
°
C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
Scale
1 : 1 on
letter size paper
2
Typical Characteristics
(continued)
1.8
1.6
1.4
1.2
1
30
V
GS
=4.5V
2.5V
2.0V
V
GS
=1.8V
24
2.0V
18
1.8V
2.5V
12
3.0V
3.5V
20
6
1.5V
4.5
0
0.8
0
0.5
1
1.5
2
2.5
3
0
5
10
15
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
0.05
I
D
= 7.5A
I
D
=3.8A
1.6
1.4
1.2
1
V
GS
= 4.5V
0.04
0.03
0.02
0.01
0
T
A
= 125
o
C
T
A
= 25
o
C
0.8
0.6
0.4
1
2
3
4
5
-50
-25
0
25
50
75
100
125
150
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Figure 3. On-Resistance Variation
withTemperature.
30
100
T
A
= -55
o
C
25
o
C
V
GS
=0
V
DS
= 5V
125
o
C
10
24
18
12
6
T
J
=125
o
C
1
25
o
C
0.1
-55
o
C
0.01
0.001
0
0.0001
0.5
1
1.5
2
2.5
3
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
3
Typical Characteristics
(continued)
5
3200
2400
1600
800
0
f = 1 MHz
GS
= 0 V
I
D
= 7.5A
V
V
DS
= 5V
4
3
2
1
0
10V
15V
C
ISS
C
OSS
C
RSS
0
6
12
18
24
30
0
4
8
12
16
20
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
30
R
DS(ON)
LIMIT
100
µ
s
1ms
SINGLE PU
L
S
E
25
20
15
10
5
R
J
A
=1
3
5
C
/
W
θ
10
1
10ms
100ms
1s
10s
A
T
= 25 C
DC
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
0.1
0.01
T
A
= 25
o
C
0
0
.
0
1
0
.
1
0
.
5
10
50 100
300
0.1
1
10
100
S
I
N
GLE P
U
L
SE
T
I
M
E
(
S
E
C
)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D
=
0.5
0.5
0.2
0.2
R
JA
( t) = r(
)
t
* R
JA
θ
θ
0.1
0.1
JA
R
=
13
5
C
/
W
θ
0. 0 5
0.05
P(
p
k
)
0. 0 2
0.02
0. 0 1
t
1
t
2
0.01
S
i
n g le
P ul
s
e
T
– T
= P
* R
(t)
JA
0
.
005
J
A
θ
D u t
y
C y
cl e, D = t
/t
2
1
0
.
002
0
.
001
0
.
0001
0
.
001
0.01
0.1
1
10
100
300
t , TI
M
E
(
s
e
c
)
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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