onsemi-FDS6982AS
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FDS6982AS
Dual Notebook Power Supply N-Channel PowerTrench
®
SyncFET
™
General Description
Features
•
Q2
:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
The FDS6982AS is designed to replace two single SO-
8
MOSFETs and Schottky diode in synchronous
8.6A, 30V
R
DS(on)
max= 13.5m
Ω
@ V
GS
= 10V
DS(on)
max= 16.5m
Ω
@ V
GS
= 4.5V
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6982AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency. The high-side switch (Q1) is designed with
specific emphasis on reducing switching losses while
the low-side switch (Q2) is optimized to reduce
conduction losses.
Q2 also includes an integrated
R
•
•
Low gate charge (21nC typical)
Q1
:
Optimized for low switching losses
6.3A, 30V
R
DS(on)
max= 2
8
.0m
Ω
@ V
GS
= 10V
DS(on)
max=
35
.0m
Ω
@ V
GS
= 4.5V
Schottky
diode
using
ON
Semiconductor
’s
R
monolithic SyncFET technology.
Applications
•
Low gate charge (11nC typical)
•
Notebook
D1
D1
5
4
3
2
1
D2
Q1
6
D2
7
Q2
8
G1
S1
SO-8
G2
S2
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Q2
Q1
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
30
±
20
8.6
30
30
±
20
6.3
20
V
V
A
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
(Note 1a)
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
W
(Note 1a)
(Note 1b)
1.6
1
0.9
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
R
θ
JA
R
θ
JC
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
12mm
Quantity
2500 units
FDS6982AS
FDS6982AS
13”
Publication Order Number:
FDS6982AS/D
©
200
8
Semiconductor Components Industries, LLC.
October
-2017, Rev. 2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
V
GS
= 0 V,
V
GS
= 0 V,
I
D
= 1 mA, Referenced to 25
°
C
I
D
= 250 µA, Referenced to 25
°
C
I
D
= 1 mA
I
D
= 250 uA
Q2
Q1
Q2
Q1
30
30
V
Voltage
Breakdown Voltage
Temperature Coefficient
28
24
∆
BV
DSS
∆
T
J
mV/
°
C
I
DSS
Zero Gate Voltage Drain
Current
Gate-Body Leakage
V
DS
= 24 V,
V
GS
= 0 V
Q2
Q1
Q2
Q1
500
1
±
100
µ
A
I
GSS
nA
V
GS
=
±
20 V,
V
DS
= 0 V
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 1 mA
I
D
= 250 µA
Q2
Q1
1
1
1.4
1.9
3
3
V
V
DS
= V
GS
,
Gate Threshold Voltage
Temperature Coefficient
∆
V
GS(th)
∆
T
J
Q2
–3.1
–4.3
mV/
°
C
I
D
= 1 mA, Referenced to 25
°
C
I
D
= 250 uA, Referenced to 25
°
C
Q1
Q2
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 8.6 A
V
GS
= 10 V, I
D
= 8.6 A, T
J
= 125
°
C
11
16
13
20
26
2
5
13.5
20.0
16.5
2
8
33
35
m
Ω
V
V
GS
= 4.5 V, I
D
= 7.5 A
GS
= 10 V, I
D
= 6.3 A
Q1
V
GS
= 10 V, I
D
= 6.3 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 5.6 A
A
S
I
D(on)
g
FS
On-State Drain Current
V
GS
= 10 V,
V
DS
= 5 V
Q2
Q1
30
20
32
19
Forward Transconductance
V
DS
= 5 V,
V
DS
= 5 V,
I
D
= 8.6 A
I
D
= 6.3 A
Q2
Q1
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
V
DS
= 10 V,
V
GS
= 0 V,
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
1250
610
410
180
130
85
pF
pF
pF
Ω
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 15mV,
f = 1.0 MHz
1.4
2.2
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 15 V,
I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Ω
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
9
10
6
7
18
20
12
14
44
39
20
6
22
22
23
25
34
27
20
10
ns
ns
ns
ns
ns
ns
ns
ns
27
24
11
3
12
12
13
14
19
15
10
5
V
DD
= 15 V,
I
D
= 1 A,
V
GS
= 4.5V, R
GEN
= 6
Ω
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Electrical Characteristics
(continued)
T
A
= 25°C unless otherwise noted
Symbol Parameter
Test Conditions
Type Min
Typ Max
Units
Switching Characteristics
(Note 2)
Q2:
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
21
11
12
6
3.1
1.8
3.6
2.4
30
15
16
9
nC
nC
nC
nC
Q
g
(TOT)
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
V
DS
= 15 V, I
D
= 11.5A
Q1:
Q
g
V
DS
= 15 V, I
D
= 6.3A
Q
gs
Q
gd
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
Q2
3.0
1.3
A
ns
T
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I
F
= 11.5 A,
d
iF
/d
t
= 300 A/µs
19
12
20
9
(Note 3)
(Note 3)
Q
rr
T
rr
nC
ns
Q1
I
F
= 6.3 A,
d
iF
/d
t
= 100 A/µs
Q
rr
V
SD
nC
V
0.5
0.6
0.8
Drain-Source Diode Forward
V
GS
= 0 V, I
S
= 3 A
(Note 2)
Q2
Q2
Q1
0.7
1.0
1.2
Voltage
V
GS
= 0 V, I
S
= 6 A
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
(Note 2)
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user’s board design.
a)
78°C/W when
mounted on a
0.5in
2
pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in
2
pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
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Typical Characteristics:
Q2
30
2.6
2.4
2.2
2
3.0V
V
GS
= 2.5V
V
GS
= 10V
4.5V
3.5V
20
10
0
1.8
1.6
1.4
1.2
1
3.0V
2.5V
3.5V
4.0V
4.5V
6.0V
10V
0.8
0
0.5
1
1.5
2
0
10
20
30
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.2
1
0.05
0.04
0.03
0.02
0.01
0
I
D
= 8.6A
GS
= 10V
I
D
= 4.3 A
V
T
A
= 125
o
C
0.8
0.6
T
A
= 25
o
C
-50
-25
0
25
50
75
100
125
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
25
20
15
10
5
10
1
V
DS
= 5V
V
GS
= 0V
T
A
= 125
o
C
25
o
C
T
A
= 125
o
C
-55
o
C
0.1
0.01
-55
o
C
25
o
C
0
1
1.5
2
2.5
3
3.5
0
0.2
0.4
0.6
0.8
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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Typical Characteristics:
Q2
10
2000
1600
1200
800
400
0
f = 1MHz
GS
= 0 V
I
D
= 8.6A
V
8
V
DS
= 10V
20V
6
C
iss
15V
4
C
oss
2
0
C
rss
0
5
10
15
20
25
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
40
30
20
10
0
R
DS(ON)
LIMIT
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
100 s
µ
1ms
10ms
10
1
100ms
1s
10s
DC
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
0.1
0.01
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θ
JA
(t) = r(t) * R
θ
JA
0.2
R
θ
JA
= 135°C/W
0.1
0.1
0.05
P(pk)
0.02
t
1
0.01
t
2
0.01
SINGLE PULSE
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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Typical Characteristics Q1
20
2.6
2.2
1.8
1.4
1
V
GS
= 10V
6.0V
4.0V
3.5V
V
GS
= 3.0V
16
12
8
4.5V
3.5V
4.0V
4.5V
3.0V
6.0V
10V
4
0.6
0
0
5
10
I
D
, DRAIN CURRENT (A)
15
20
0
1
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. On-Region Characteristics.
Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.1
I
D
= 6.3A
V
GS
= 10V
I
D
= 3.15 A
0.08
0.06
0.04
0.02
0
1.4
1.2
1
T
A
= 125
o
C
T
A
= 25
o
C
0.8
0.6
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Temperature.
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
20
100
V
GS
= 0V
V
DS
= 5V
10
1
15
10
5
T
A
= 125
o
C
25
o
C
0.1
T
A
= 125
o
C
-55
o
C
-55
o
C
0.01
0.001
0.0001
25
o
C
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Transfer Characteristics.
Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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Typical Characteristics
Q1
800
600
400
200
0
10
f = 1MHz
V
GS
= 0 V
I
D
= 6.3A
8
V
DS
= 10V
C
iss
6
4
2
0
20V
15V
C
oss
C
rss
0
5
10
15
20
0
3
6
9
12
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Gate Charge Characteristics.
Figure 19. Capacitance Characteristics.
100
50
40
30
20
10
0
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
R
DS(ON)
LIMIT
100 s
µ
10
1
1ms
10ms
100ms
1s
10s
DC
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
0.1
0.01
T
A
= 25
o
C
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 20. Maximum Safe Operating Area.
Figure 21. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 135°C/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t
1
0.01
t
2
0.01
SINGLE PULSE
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
1
10
100 1000
t
1
, TIME (sec)
Figure 22. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
ON Semiconductor
’s SyncFET process embeds
Schottky diode in
parallel with PowerTrench
MOSFET. This
diode exhibits similar
a
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage.
This will
increase the power in the device.
characteristics to a discrete external Schottky
diode
in parallel with a MOSFET.
Figure 23
shows the
0.1
reverse
FDS6982AS.
recovery
characteristic
of
the
T
A
= 125
o
C
0.01
0.001
T
A
= 100
o
C
0.0001
0.00001
T
A
= 25
o
C
0.000001
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
Figure 25. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature
Time: 10nS/DIV
Figure 23. FDS6982AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes,
Figure 24
shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6982).
Time: 10nS/DIV
Figure 24. Non-SyncFET (FDS6982) body
diode reverse recovery characteristic.
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Typical Characteristics
L
V
DS
BV
DSS
t
P
V
GS
R
GE
V
DS
V
DD
+
–
I
AS
DUT
V
DD
0V
V
GS
vary t
P
to obtain
required peak I
AS
tp
I
AS
0.01
Ω
t
AV
Figure 26. Unclamped Inductive Load Test
Figure 27. Unclamped Inductive
Waveforms
Circuit
Drain Current
Same type as
+
50k
Ω
10V
10
µ
F
–
1
µ
F
+
V
DD
Q
G(TOT)
–
V
GS
10V
V
GS
DUT
Q
GD
Q
GS
I
g(REF
Charge, (nC)
Figure 28. Gate Charge Test Circuit
Figure 29. Gate Charge Waveform
t
ON
t
d(ON)
t
OFF
t
d(OFF
R
L
t
f
V
DS
t
r
V
DS
)
90%
90%
+
–
V
GS
R
GEN
10%
10%
0V
DUT
V
DD
90%
50%
V
GS
50%
V
GS
Pulse Width
≤
1
µ
s
Duty Cycle
≤
0.1
%
10%
0V
Pulse Width
Figure 30. Switching Time Test
Circuit
Figure 31. Switching Time Waveforms
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