onsemi-FDS8449
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DATA SHEET
MOSFET
– N-Channel,
POWERTRENCH
)
SOIC8
CASE 751EB
40
V
,
7
.6 A, 29 m
W
FDS8449, FDS8449-G
D
D
D
D
5
6
7
8
G
S
S
S
4
3
2
1
General Description
These N
−
Channel MOSFETs are produced using
onsemi
’s
advanced POWERTRENCH process that has been especially tailored
to minimize on
−
state resistance and yet maintain superior switching
performance.
Features
MARKING DIAGRAM
•
7.6 A, 40 V
R
R
= 29 m
W
@ V
= 10 V
GS
DS(on)
= 36 m
W
@ V
= 4.5 V
DS(on)
GS
•
High Power Handling Capability in a Widely Used Surface Mount
Package
•
Pb
−
Free, Halide Free and RoHS Compliant
FDS8449
ALYW
$Y&Z&2&K
FDS
8449
ABSOLUTE MAXIMUM RATINGS
T
A
= 25
°
C unless otherwise noted.
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Ratings
40
Unit
V
FDS8449
FDS8449
−
G
V
DSS
GSS
FDS8449
= Specific Device Code
V
20
V
A
= Assembly Site
L
= Wafer Lot Number
= Assembly Start Week
=
onsemi
Logo
= Assembly Plant Code
= 2
−
Digit Code Format
= 2
−
Digits Lot Run Traceability Code
I
Drain Current
−
Pulsed
A
D
YW
$Y
&Z
&2
&K
7.6
50
P
Power Dissipation for Single Operation
W
D
2.5
1
T , T
Operating and Storage Junction
T
e
mperature Range
−
55 to +150
°
C
J
STG
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
FDS8449
SOIC8
2500 /
(Pb
−
Free/
Halide Free)
T
a
pe & Reel
THERMAL CHARACTERISTICS
FDS8449
−
G
SOIC8
(Pb
−
Free/
Halide Free)
2500 /
T
a
pe & Reel
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance,
50
°
C/W
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
R
Thermal Resistance,
125
25
°
C/W
°
C/W
q
JA
R
Thermal Resistance,
q
JC
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
March, 2022
−
Rev. 3
FDS8449/D
FDS8449, FDS8449
−
G
ELECTRICAL CHARACTERISTICS
T =
25
°
C unless otherwise noted.
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
E
Drain to Source Avalanche Energy
Drain to Source Avalanche Current
V
DD
= 40
V
, I
=
7
.3 A, L = 1 mH
−
−
−
27
mJ
A
AS
D
I
AS
7.3
−
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250
m
A, V
= 0 V
40
−
−
−
V
DSS
D
GS
Breakdown Voltage
T
e
mperature
Coefficient
= 250
m
A,
Referenced to 25
°
C
−
34
mV/
°
C
D
BV
DSS
D
T
J
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
V
= 32 V, V
= 0 V
−
−
−
−
1
m
A
DSS
DS
GS
I
=
20
V
, V
= 0 V
100
nA
GSS
GS
DS
V
Gate Threshold Voltage
V
I
= V
,
I =
250
m
A
1
1.9
3
V
GS(th)
DS
GS D
Gate Threshold Voltage
T
e
mperature Coefficient
= 250
m
A, Referenced to 25
°
C
−
−
5
−
mV/
°
C
D
V
GS(th)
D
T
J
D
R
Static Drain to Source On–Resistance
I
I
I
= 7.6 A, V
= 10 V,
−
−
−
21
26
29
29
36
43
m
W
DS(on)
D
D
D
GS
= 6.8 A, V
= 4.5 V
GS
= 7.6 A, V
= 10 V,
GS
T =
125
°
C
J
g
FS
Forward Transconductance
V
DS
= 10
V
, I
=
7
.6 A
−
21
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 20 V, V
= 0 V,
−
−
−
−
760
100
60
−
−
−
−
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1.0 MHz
1.2
W
G
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
T
o
tal Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= 20 V, I
= 1 A,
−
−
−
−
−
−
−
9
5
18
10
17
6
ns
d(on)
DD
GS
D
= 10 V, R
= 6
W
GS
t
r
t
23
3
d(off)
t
f
Q
V
DS
V
GS
= 20 V, I
= 7.6 A,
7.7
2.4
2.8
11
−
nC
g
D
= 5 V
Q
gs
gd
Q
−
DRAIN
−
SOURCE DIODE CHARACTERISTICS
V
Drain to Source Diode Forward Voltage
Diode Reverse Recovery Time
V
−
−
−
0.76
17
7
1.2
−
V
SD
GS
S
t
I
F
= 7.6 A, d
/d =
100 A/
m
s
ns
nC
rr
IF
t
Q
Diode Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction
−
to
−
case and case
−
to
−
ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
CA
JC
a) 50
°
C/W when mounted
b) 125
°
C/W when mounted
on a minimum pad.
2
on a 1 in
pad of 2 oz. copper.
2. Pulse
T
e
st: Pulse Width < 300
m
s, Duty Cycle < 2.0%
3. BV(avalanche)
Single
−
Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
2
FDS8449, FDS8449
−
G
TYPICAL CHARACTERISTICS
20
16
12
3
2.6
2.2
V
= 10 V
V
GS
= 3.0 V
GS
4.0 V
3.5 V
6.0 V
4.5 V
1.8
8
3.5 V
1.4
4.0 V
3.0 V
4.5 V
6.0 V
4
0
10 V
1
0.6
4
0
0.5
1
1.5
2
2.5
0
8
12
16
20
V
DS
, Drain to Source Voltage (V)
I ,
Drain Current (A)
D
Figure 1. On Region Characteristics
Figure 2. On
−
Resistance Variation with Drain
Current and Gate Voltage
1.6
1.4
1.2
1
0.07
I
D
= 3.5 A
I
V
= 7.6 A
D
=
−
10 V
GS
0.06
0.05
0.04
0.03
T
A
= 125
°
C
T
A
= 25
°
C
0.8
0.6
0.02
0.01
10
−
50
−
25
0
25
50
75
100 125 150
2
4
6
8
T , Junction
T
e
mperature (
°
C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. On
−
Resistance Variation with Temperature
Figure 4. On
−
Resistance Variation with
Gate
−
to
−
Source Voltage
100
10
1
20
V
GS
= 0 V
V
DS
= 10 V
15
10
T
A
= 125
°
C
0.1
25
°
C
T
A
= 125
°
C
0.01
−
55
°
C
5
0
−
55
°
C
0.001
25
°
C
0.0001
1
1.5
V
2
2.5
3
3.5
0
0.2
V
0.4
0.6
0.8
1.0
1.2
, Body Diode Forward Voltage (V)
, Gate to Source Voltage (V)
SD
GS
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
3
FDS8449, FDS8449
−
G
TYPICAL CHARACTERISTICS
(continued)
1000
10
8
I
D
= 7.6 A
f = 1 MHz
= 0 V
V
GS
V
= 10 V
30 V
DS
800
600
400
200
0
C
iss
6
4
2
0
20 V
C
oss
C
rss
0
4
8
12
16
0
5
10
15
20
25
30
35
40
Q ,
Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
10
1
50
40
30
20
Single Pulse
R
DS(ON) LIMIT
100
m
s
1 ms
10 ms
R
T
= 125
°
C/W
= 25
°
C
q
JA
A
100 ms
1 s
10 s
DC
V
= 10 V
GS
0.1
Single Pulse
10
0
R
T
A
= 125
°
C/W
= 25
°
C
q
JA
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain
−
Source Voltage (V)
t ,
Time (s)
1
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Maximum Safe Operating Area
50
100
Single Pulse
R
T
= 125
°
C/W
= 25
°
C
q
JA
40
30
20
10
A
T =
25
°
C
J
10
1
0.01
0
10
0.001
0.01
0.1
1
10
100
1000
0.1
t ,
Time in Avalanche (ms)
AV
1
t ,
Time (s)
1
Figure 12. Unclamped Inductive Switching
Capability
Figure 11. Single Pulse Maximum Peak Current
4
FDS8449, FDS8449
−
G
TYPICAL CHARACTERISTICS
(continued)
1
D = 0.5
0.2
0.1
R
R
(t) = r(t)
×
R
= 125
°
C/W
q
q
q
JA
JA
JA
0.1
0.05
P
DM
0.02
0.01
t
1
0.01
t
2
T
−
T =
P
×
R (t)
q
JA
J
A
Single Pulse
Duty Factor D = t
/ t
1
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t ,
Time (s)
1
Figure 13. Transient Thermal Response Curve
NOTE: Transient
thermal response will change depending on the circuit board design.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates and/or subsidiaries in the United
States and/or other countries.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
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©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
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onsemi
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onsemi
’s product/patent coverage may be accessed at
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−
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reserves the right to make changes at any time to any
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−
is” and
onsemi
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onsemi
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onsemi
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onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
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onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
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:
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