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March 2011
FDS86140
N-Channel PowerTrench
®
MOSFET
100 V, 11.2 A, 9.8 m
Ω
Features
General Description
Max r
DS(on)
= 9.8 m
Ω
at V
GS
= 10
V
,
I
D
= 11.2 A
This N-Channel MOSFET is produced
using Fairchild
Semiconductor‘s advanced
Power Trench
®
process that has
Max r
DS(on)
= 16 m
Ω
at V
GS
= 6 V, I
D
= 9 A
been optimized for r
DS(on)
ruggedness
.
, switching performance and
High performance trench technologh for extremely low
r
DS(on)
High power and current handing capability in a widely used
surface mount package
Applications
100% UIL
T
e
sted
RoHS Compliant
DC/DC Converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Swith for 24 V and 48 V Systems
High Voltage Synchronous Rectifier
D
D
G
S
S
S
4
3
2
1
5
6
7
8
D
D
D
D
D
D
G
SO-8
S
S
Pin 1
S
MOSFET Maximum Ratings
T
A
= 25
°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
100
±20
11.2
50
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
V
V
I
D
A
mJ
W
E
AS
P
D
Single Pulse Avalanche Energy
Power Dissipation
(Note 3
)
264
5.0
T
C
= 25 °C
T
A
= 25 °C
(Note 1
)
Power Dissipation
(Note 1a)
2.5
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1
)
25
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
FDS86140
FDS86140
SO-8
13’’
2500 units
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
1
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V
100
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25 °C
70
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 80 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
1
μ
A
±100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
2
2.7
-11
4
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25 °C
V
GS
= 10 V, I
D
= 11.2 A
GS
= 6
V
,
I
D
= 9 A
mV/°C
8.1
9.8
16
V
10.8
r
DS(on)
Static Drain to Source On Resistance
Forward Transconductance
m
Ω
V
GS
= 10
V
,
I
D
= 11.2 A,
T
J
= 125 °C
13.1
35
17
g
FS
V
DS
= 10 V,
I
D
= 11.2 A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
1940
440
20
2580
585
30
pF
pF
pF
Ω
V
DS
= 50 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.9
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
13.7
5.6
23
25
11
38
10
41
23
ns
ns
V
DD
= 50
V
, I
D
= 11.2 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
ns
4.8
29
ns
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
V
GS
= 0 V to 5
V
nC
nC
nC
nC
Q
g
16.5
8.0
6.5
V
DD
= 50
V
,
D
= 11.2 A
I
Q
gs
Q
gd
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 11.2 A
(Note 2)
(Note 2)
0.8
0.7
53
1.3
1.2
85
V
SD
Source-Drain Diode
Forward Voltage
V
V
GS
= 0 V, I
S
= 2 A
t
rr
Reverse Recovery Time
ns
I
F
= 11.2 A, di/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
59
94
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
JA
θ
JC
θ
CA
the user’s board design.
a) 50 °C/W when mounted on a
1 in
pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
3. Starting T
= 25 °C,
L = 1 mH, I
= 23 A, V
= 90 V, V
= 10 V.
J
AS
DD
GS
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
2
Typical Characteristics
T
J
= 25 °C unless otherwise noted
50
4
3
2
1
0
V
GS
= 10 V
V
GS
= 4.5 V
V
GS
= 7 V
40
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 5 V
30
V
GS
= 7 V
V
GS
= 6 V
20
V
GS
= 4.5V
10
V
GS
= 10 V
PULSE DURATION = 80
μ
s
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
0
10
20
30
40
50
I
D
,
DRAIN CURRENT (A)
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
On Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
50
2.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 11.2 A
GS
= 10 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
40
30
20
10
0
I
D
= 11.2 A
T
J
= 125
o
C
T
J
= 25
o
C
4
5
6
7
8
9
10
-75 -50 -25
0
25 50 75
100 125 150
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
50
100
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
T
J
= 150
o
40
30
20
10
0
10
1
C
V
DS
= 5 V
T
J
= 25
o
C
T
J
= 150
o
C
0.1
T
J
= -55
o
C
T
J
= 25
o
C
0.01
T
J
= -55
o
C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
10
5000
1000
I
D
= 11.2 A
V
DD
= 50 V
8
C
iss
V
DD
= 25 V
V
DD
= 75 V
6
4
2
0
C
oss
100
10
f = 1 MHz
= 0 V
V
GS
C
rss
0.1
1
10
100
0
6
12
18
24
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
20
12
9
10
T
J
= 25
o
C
T
J
= 100
o
C
V
GS
= 10 V
6
V
GS
= 6 V
T
J
= 125
o
C
3
R
θ
JA
= 50
o
C/W
1
0.01
0
25
0.1
1
10
100
50
75
100
125
150
T
A
,
AMBIENT TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figure9. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs
Ambient Temperature
80
10
2000
SINGLE PULSE
θ
JA
= 125
o
C/W
A
= 25
o
C
1000
100
10
R
100us
T
1 ms
1
0.1
THIS AREA IS
10 ms
LIMITED BY r
DS(on)
100 ms
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
1 s
10 s
DC
1
0.01
0.5
10
-4
10
-3
10
-2
t, PULSE WIDTH (sec)
10
-1
1
10
0.01
0.1
1
10
100
500
100 1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse
Maximum
Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
4
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
P
DM
0.02
0.01
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
R
θ
JA
= 125
o
C/W
1
2
PEAK T
= P
J
x Z
x R
+ T
DM
θ
JA
θ
JA
A
0.001
0.0005
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13.
Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
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Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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