onsemi-FDS8842NZ
| Part # | onsemi-FDS8842NZ |
Download  | onsemi-FDS8842NZ |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most
current and up-to-date ordering information can be found at
www.onsemi.com
. Please
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
February 2009
FDS8842NZ
N-Channel PowerTrench
®
MOSFET
40 V, 14.9 A, 7.0 m
Ω
Features
General Description
Max r
DS(on)
= 7.0 m
Ω
at V
GS
= 10
V
,
I
D
= 14.9 A
Max r
DS(on)
= 11.6 m
Ω
at V
GS
= 4.5 V, I
D
= 11.6 A
HBM ESD protection level of
4.4 kV typical(note 3)
The FDS8842NZ has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance.
High performance trench technology for extremely low r
DS(on)
and fast switching
Applications
Synchronous Buck for Notebook Vcore and Server
Notebook Battery
High power and current handling capability
Termination is Lead-free and RoHS Compliant
Load Switch
D
D
D
G
D
D
D
D
S
S
G
SO-8
S
S
D
S
Pin 1
S
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
V
V
±20
14.9
I
D
A
93
E
AS
P
D
Single Pulse Avalanche Energy
Power Dissipation
(Note 4)
(Note 1a)
(Note 1b)
253
mJ
W
T
A
= 25 °C
T
A
= 25 °C
2.5
Power Dissipation
1.0
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
25
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
FDS8842NZ
FDS8842NZ
SO8
13 ’’
2500 units
1
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
µ
A, V
GS
= 0 V
40
V
∆
BV
DSS
∆
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
µ
A, referenced to 25 °C
35
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 32 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
1
µ
A
µ
A
±10
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
µ
A
1.0
1.9
-6
3.0
V
∆
V
GS(th)
∆
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
µ
A, referenced to 25 °C
mV/°C
V
GS
= 10 V,
I
D
= 14.9 A
5.6
6.7
8.9
111
7.0
11.6
11.1
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 4.5 V, I
D
= 11.6 A
m
Ω
V
GS
= 10 V,
I
D
= 14.9 A, T
J
=125 °C
V
DS
= 5 V,
I
D
= 14.9 A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
2890
340
220
0.8
3845
455
pF
pF
pF
Ω
V
DS
= 15 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
330
f = 1 MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
13
7
23
14
54
10
73
38
ns
ns
V
DD
= 20 V, I
D
= 14.9 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
34
5
ns
ns
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
V
GS
= 0 V to 5 V
52
27
8.6
9.7
nC
nC
nC
nC
V
DD
= 20
V
,
D
= 14.9 A
Q
g
I
Q
gs
Q
gd
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 14.9 A
0.8
0.7
26
1.2
1.2
42
V
SD
Source to Drain Diode
Forward Voltage
V
V
GS
= 0 V, I
S
= 2.1 A
t
rr
Reverse Recovery Time
ns
I
F
= 14.9 A, di/dt = 100 A/
µ
s
Q
rr
Reverse Recovery Charge
15
27
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
a) 50 °C/W when mounted on a
1 in
pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2
2. Pulse Test: Pulse Width < 300
µ
s, Duty cycle < 2.0%.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
4. Starting T
= 25 °C,
L = 3 mH, I
= 13 A, V
= 40 V, V
= 10 V.
J
AS
DD
GS
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
2
Typical Characteristics
T
J
= 25 °C unless otherwise noted
60
5
4
3
2
1
0
V
GS
= 10 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µ
s
V
GS
= 3 V
V
GS
= 6 V
50
40
V
GS
= 4.5 V
V
GS
= 3.5 V
V
GS
= 3.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µ
s
30
20
10
0
V
GS
= 4 V
V
GS
= 4.5 V
V
GS
= 10 V
V
GS
= 4 V
V
GS
= 6 V
40
V
GS
= 3 V
0
0.3
V
DS
0.6
0.9
1.2
1.5
0
10
20
30
50
60
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
1.8
20
I
D
= 14.9 A
V
GS
= 10 V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
15
10
5
I
D
= 14.9 A
T
J
= 125
o
C
T
J
= 25
o
C
0
-75 -50 -25
T
J
0
25 50 75
100 125 150
2
4
6
8
10
,
JUNCTION TEMPERATURE
( )
o
C
V
GS
,
GATE TO SOURCE VOLTAGE (V)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
60
50
40
30
20
10
0
60
10
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
V
DS
= 5 V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 150
o
T
J
= 25
o
T
J
= -55
o
C
C
1
C
T
J
= -55
o
C
0.1
0.2
0
1
2
3
4
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
5000
1000
10
I
D
= 14.9 A
C
iss
8
V
DD
= 15 V
6
V
DD
= 20 V
V
DD
= 25 V
4
C
oss
2
0
f = 1 MHz
= 0 V
C
rss
V
GS
100
0.1
1
10
40
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s
D r a i n
to Source Voltage
30
10
-3
10
-5
10
-7
10
-9
V
GS
= 0 V
10
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 100
o
C
T
J
= 25
o
C
1
0.001
0.01
0.1
1
10
100
1000
0
5
10
15
20
25
30
t
AV
, TIME IN AVALANCHE (ms)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figur
e
9
. Unclamped
Inductive
Switching Capability
Figure 10.
Igss vs Vgs
100
10
2000
1000
V
GS
= 10 V
1 ms
SINGLE PULSE
R
θ
JA
= 125
o
C/W
A
= 25
o
C
10 ms
100
10
T
100 ms
1
THIS AREA IS
LIMITED BY r
DS(on)
1 s
SINGLE PULSE
T
J
= MAX RATED
0.1
R
θ
JA
= 125
o
C/W
10 s
DC
A
= 25
o
C
1
T
0.01
0.5
10
-3
10
-2
10
-1
t, PULSE WIDTH (sec)
1
10
0.01
0.1
1
10
100
200
100
1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figure 12.
Single Pulse Maximum
Power Dissipation
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
4
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
0.01
1
t
2
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
R
θ
JA
= 125
o
C/W
1
2
PEAK T
= P
J
x Z
x R
+ T
θ
J
A
θ
J
A
A
DM
0.001
0.0005
10
-3
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13.
Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
5
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
FRFET
®
Build it Now
™
CorePLUS
™
CorePOWER
™
CROSSVOLT
™
CTL™
Programmable Active Droop
™
QFET
®
QS
™
Quiet Series
™
RapidConfigure
™
Global Power Resource
SM
Green FPS
™
TinyBoost
™
TinyBuck
™
Green FPS
™
e-Series
™
GTO
™
TinyLogic
®
TINYOPTO
™
TinyPower
™
TinyPWM
™
Current Transfer Logic™
EcoSPARK
®
EfficentMax™
EZSWITCH™*
™*
IntelliMAX
™
ISOPLANAR
™
MegaBuck™
MICROCOUPLER
™
MicroFET
™
MicroPak
™
MillerDrive™
MotionMax™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
TinyWire
™
SMART START
™
TriFault Detect
™
TRUECURRENT
™
*
μ
SerDes
™
SPM
®
®
STEALTH™
SuperFET
™
SuperSOT
™
-3
SuperSOT
™
-6
SuperSOT
™
-8
SupreMOS™
Fairchild
®
Motion-SPM™
Fairchild Semiconductor
®
FACT Quiet Series™
FACT
®
OPTOLOGIC
®
UHC
®
Ultra FRFET
™
UniFET
™
VCX
™
VisualMax
™
XS™
OPTOPLANAR
®
®
FAST
®
SyncFET™
FastvCore
™
®
PDP SPM™
Power-SPM
™
PowerTrench
®
PowerXS™
*
FlashWriter
®
*
The Power Franchise
®
FPS
™
F-PFS
™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life
support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A
critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild’s quality standards for handling and storage and provide access to Fairchild’s full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I39
© 2008 Fairchild Semiconductor Corporation
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800
−
282
−
9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81
−
3
−
5817
−
1050
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
©
Semiconductor Components Industries, LLC
