onsemi-FDS8958
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Download  | onsemi-FDS8958 |
October 2004
FDS8958
Dual N & P-Channel PowerTrench
Ò
MOSFET
General Description
Features
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
·
Q1
:
N-Channel
7.0A, 30V
R
DS(on)
= 0.028
W
@ V
GS
= 10V
R
DS(on)
= 0.040
W
@ V
GS
= 4.5V
·
Q2
:
P-Channel
-5A, -30V
R
DS(on)
= 0.052
W
@ V
GS
= -10V
R
DS(on)
= 0.080
W
@ V
GS
= -4.5V
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
·
·
Fast switching speed
High power and handling capability in a widely
used surface mount package
Q2
D2
5
6
7
8
4
3
2
1
D2
D1
D1
Q1
G2
SO-8
S2
G1
S1
Pin 1
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Q1
30
±
20
7
Q2
30
Units
V
V
A
V
GSS
Gate-Source Voltage
±
20
-5
I
D
Drain Current
– Continuous
– Pulsed
(Note 1a)
20
-20
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
W
(Note 1a)
(Note 1b)
1.6
1
(Note 1c)
0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
40
R
q
JA
°
C/W
°
C/W
Thermal Resistance, Junction-to-Case
R
q
JC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS8958
FDS8958
13”
12mm
2500 units
FDS8958 Rev A(W)
Ó
2004 Fairchild Semiconductor Corporation
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Q1
Q2
30
-30
V
V
GS
= 0 V, I
D
= 250
m
A
V
GS
= 0 V, I
D
= -250
m
A
Voltage
Breakdown Voltage
Temperature Coefficient
Q1
Q2
25
-22
D
BV
DSS
D
T
J
I
DSS
I
D
= 250
m
A, Referenced to 25
°
C
I
D
= -250 µA, Referenced to 25
°
C
V
DS
= 24 V, V
GS
= 0 V
mV/
°
C
m
A
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
Q1
Q2
All
1
-1
100
V
DS
= -24 V, V
GS
= 0 V
I
GSSF
I
GSSR
nA
nA
Gate-Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
All
-100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
Q1
Q2
1
-1
1.6
-1.7
3
-3
V
V
DS
= V
GS
, I
D
= 250
m
A
V
DS
= V
GS
, I
D
= -250 µA
Gate Threshold Voltage
Temperature Coefficient
Q1
Q2
-4.3
4
D
V
GS(th)
D
T
J
R
DS(on)
I
D
= 250
m
A, Referenced to 25
°
C
I
D
= -250 µA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 7 A
V
GS
= 10 V, I
D
= 7 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 6 A
mV/
°
C
m
W
Static Drain-Source
On-Resistance
Q1
21
32
27
28
42
40
V
GS
= -10 V, I
D
= -5 A
V
GS
= -10 V, I
D
= -5 A, T
J
= 125
°
C
V
GS
= -4.5 V, I
D
= -4 A
V
GS
= 10 V, V
DS
= 5 V
V
GS
= -10 V, V
DS
= -5 V
V
DS
= 5 V, I
D
= 7 A
Q2
41
58
58
52
78
80
I
D(on)
g
FS
On-State Drain Current
Q1
Q2
Q1
Q2
20
-20
A
S
Forward Transconductance
19
11
V
DS
= -5 V, I
D
=-5 A
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Q1
Q1
Q2
Q1
Q2
Q1
Q2
789
690
173
306
66
pF
pF
pF
V
DS
= 10 V, V
GS
= 0 V, f = 1.0 MHz
Output Capacitance
Q2
V
DS
= -10 V, V
GS
= 0 V, f = 1.0 MHz
Reverse Transfer Capacitance
77
FDS8958 Rev A(W)
Electrical Characteristics
(continued)
T
A
= 25°C unless otherwise noted
Symbol Parameter
Test Conditions
Type Min
Typ Max
Units
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
6
6.7
10
9.7
18
19.8
5
12.3
16
14
12
13.4
18
19.4
29
35.6
12
22.2
26
23
ns
ns
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
W
Q2
V
ns
DD
= -10 V, I
D
= -1 A,
V
GS
= -10V, R
GEN
= 6
W
ns
Q
g
Q
gs
Q
gd
Q1
V
nC
nC
nC
DS
= 15 V, I
D
= 7 A, V
GS
= 10 V
2.5
2.2
2.1
1.9
Q2
DS
= -15 V, I
D
= -5 A,V
GS
= -10 V
V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
Q1
Q2
1.3
-1.3
1.2
A
V
V
SD
Drain-Source Diode Forward
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
(Note 2)
0.74
-0.76
Voltage
V
GS
= 0 V, I
S
= -1.3 A
-1.2
Notes:
1.
R
q
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
q
JC
is guaranteed by design while R
q
CA
is determined by the user’s board design.
a) 78°/W
when
mounted on a
0.5 in
2
pad of 2 oz
copper
b) 125°/W
when
c) 135°/W
when mounted on a
minimum pad.
mounted on a .02 in
2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
FDS8958 Rev A(W)
Typical Characteristics:
Q1
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
30
V
GS
= 10V
4.0V
V
GS
= 3.0V
7.0V
3.5V
5.0V
20
4.5V
3.5V
3.0V
4.0V
4.5V
10
5.0V
6.0V
7.0V
10V
2.5V
0
0
1
2
3
4
5
0
6
12
18
24
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
1.9
I
D
= 7A
I
D
= 7A
V
GS
= 10V
1.6
1.3
1.0
0.7
0.4
T
A
= 125
o
C
T
A
= 25
o
C
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
V
GS
= 0V
V
DS
= 10V
25
o
C
T
A
= -55
o
C
25
20
15
10
5
10
1
T
A
= 125
o
C
125
o
C
25
o
C
0.1
0.01
-55
o
C
0
0.001
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8958 Rev A(W)
Typical Characteristics:
Q1
10
1200
900
600
300
0
f = 1MHz
V
GS
= 0 V
I
D
=7A
V
DS
= 5V
10V
8
6
4
2
0
15V
C
ISS
C
OSS
C
RSS
0
4
8
12
16
0.0
5.0
10.0
15.0
20.0
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
R
DS(ON)
LIMIT
SINGLE PULSE
R
q
JA
= 135°C/W
T
A
= 25°C
m
100
1ms
10ms
s
100ms
1s
1
10s
DC
V
GS
= 10V
SINGLE PULSE
R
q
JA
= 135
o
C/W
T
A
= 25
o
C
0.1
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS8958 Rev A(W)
Typical Characteristics:
Q2
30
2.5
2
V
GS
= -10.0V
V
GS
= -3.5V
25
-7.0V
-5.0V
-6.0V
20
15
10
5
-4.0V
-4.0V
-4.5V
1.5
1
-5.0V
-6.0V
-3.5V
-7.0V
-10.0V
-3.0V
4
0
0.5
0
1
2
3
5
0
6
12
18
24
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.2
I
D
= -5A
I
D
= -5A
V
GS
= -10V
1.4
0.15
0.1
0.05
0
1.2
1.0
0.8
0.6
T
A
= 125
o
C
T
A
= 25
o
C
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
30
25
20
15
10
5
100
V
GS
= 0V
T
A
= -55
o
C
V
DS
= -10V
10
25
o
C
T
A
= 125
o
C
1
25
o
C
125
o
C
0.1
0.01
-55
o
C
0
0.001
1.5
2.5
3.5
4.5
5.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY
DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8958 Rev A(W)
Typical Characteristics:
Q2
1000
800
600
400
200
0
10
f = 1 MHz
V
GS
= 0 V
I
D
= -5.3A
V
DS
= -5V
-10V
8
C
ISS
-15V
6
4
2
0
C
OSS
C
RSS
10
0
4
8
12
16
0
5
15
20
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
100
50
40
30
20
10
0
R
DS(ON)
LIMIT
m
100
s
SINGLE PULSE
R
q
JA
= 135°C/W
T
A
= 25°C
1ms
10ms
100ms
1s
10
1
10s
DC
V
GS
= -10V
SINGLE PULSE
R
q
JA
= 135
o
C/W
T
A
= 25
o
C
0.1
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
q
(t) = r(t) + R
q
R
q
JA
= 135
o
C/W
JA
JA
0.
0.1
0.1
0.05
P(pk)
0.02
0.01
t
1
SINGLE PULSE
0.01
t
2
T
J
– T
A
= P * R
q
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8958 Rev A(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
Stealth™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT
™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
QS™
QT Optoelectronics™
TinyLogic
HiSeC™
I
2
C™
Quiet Series™
RapidConfigure™
RapidConnect™
µ
SerDes™
TINYOPTO™
TruTranslation™
UHC™
i-Lo
™
ImpliedDisconnect™
FACT Quiet Series™
UltraFET
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
SILENT SWITCHER
VCX™
SMART START™
SPM™
Across the board. Around the world.™
The Power Franchise
Programmabl
e
A
ctive Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVE
S
T
HE RIGH
T
T
O MAKE CHANGES WITHOU
T
F
URTHER NOTIC
E
T
O
A
NY
PRODUCTS HEREI
N
T
O IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD DOES NO
T
A
SSUM
E
A
N
Y
L
IABILITY
ARISING OU
T
O
F
T
H
E
A
PPLICATION OR USE O
F
A
N
Y
P
RODUC
T
O
R CIRCUI
T
D
ESCRIBED HEREIN; NEITHER DOES IT
CONVE
Y
A
N
Y
L
ICENSE UNDER ITS PATEN
T
R
IGHTS, NO
R
T
HE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOU
T
T
HE EXPRESS WRITTE
N
A
PPROVA
L
O
F FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13
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FDS8958
30V Dual N & P-Channel PowerTrench MOSFET
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Contents
•
General description
•
Features
•
Application notes
•
Qualification Support
Product Change Notices
(PCNs)
Datasheet
•
Product status/pricing/packaging
•
Order Samples
Download this
datasheet
Support
Sales support
Quality and reliability
Design center
General description
These dual N- and P-Channel enhancement mode power field effect
transistors are produced using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored to minimize on-
state ressitance and yet maintain superior switching performance.
e-mail this datasheet
This page
These devices are well suited for low voltage and battery powered
Print version
applications where low in-line power loss and fast switching are required.
This product
Use in FETBench
Analysis
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Features
z
Q1: N-Channel
{
7.0A, 30V
R
R
= 0.028
Ω
@ V
= 10V
DS(ON)
GS
= 0.040
Ω
@ V
= 4.5V
DS(ON)
GS
z
Q2: P-Channel
{
-5A, -30V
R
R
= 0.052
Ω
@ V
= -10V
DS(ON)
GS
= 0.080
Ω
@ V
= -4.5V
DS(ON)
GS
z
z
Fast switching speed
High power and handling capability in a widely used surface mount
package
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Product status/pricing/packaging
Product
Product status
Pb-free Status
Package type
Leads
Packing method
Package Marking Convention**
Line 1:
(Fairchild logo)
$Y
(Asm. Plant Code)
&
Z
FDS8958_NF073
Full Production
SO-8
8
TAPE REEL
& (2-Digit
Date Code)
2
&
T
(Die Trace Code)
Line 2: FDS Line 3: 8958
** A sample button will appear if the part is available through Fairchild’s on-line samples program. If there is no sample button, please
contact a
Fairchild distributor
to obtain samples
Indicates product with Pb-free second-level interconnect. For more information
click here.
Package marking information for product FDS8958 is available.
Click here for more information
.
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Application notes
AN-4143: LCD Backlight Inverter Drive IC (FAN7310)
(321 K) Jul 27, 2007
AN-6016: AN-6016 LCD Backlight Inverter Drive IC (FAN7311)
(462 K) Jul 27,
2007
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Qualification Support
Click on a product for detailed qualification data
Product
FDS8958_NF073
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