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December 2010
FDT86246
N-Channel Power Trench
®
MOSFET
150 V, 2 A, 236 m
Ω
Features
General Description
Max r
DS(on)
= 236 m
Ω
at V
GS
= 10 V, I
D
= 2 A
Max r
DS(on)
= 329 m
Ω
at V
GS
= 6 V, I
D
= 1.7 A
High performance trench technology for extremely low r
DS(on)
This N-Channel MOSFET is produced
using Fairchild
Semiconductor‘s advanced
Power Trench
®
process that has
been optimized for r
DS(on)
, switching performance and
ruggedness.
High power and current handling capability in a widely used
surface mount package
Applications
Fast switching speed
100% UIL
T
e
sted
RoHS Compliant
Load Switch
Primary Switch
D
D
S
D
G
SOT-223
G
S
D
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
150
V
V
±20
(Note 1a)
2
I
D
A
mJ
W
8
E
AS
P
D
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
(Note 1a)
(Note 1b)
8
2.2
Power Dissipation
1.0
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
12
55
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
Quantity
86246
FDT86246
SOT-223
12 mm
2500 units
©2010 Fairchild Semiconductor Corporation
FDT86246 Rev.C
1
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V
150
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25 °C
104
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 120 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
1
μ
A
±100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
3.1
-9
4.0
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25 °C
GS
= 10 V,
I
D
= 2 A
mV/°C
V
194
231
349
5
236
329
425
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 6 V,
I
D
= 1.7 A
m
Ω
V
GS
= 10 V,
I
D
= 2 A,
T
J
= 125 °C
V
DS
= 10 V,
I
D
= 2 A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
161
21
215
30
5
pF
pF
pF
Ω
V
DS
= 75 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.6
0.9
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
7.8
2.3
4.6
1.2
2.9
1.7
0.9
0.8
16
10
10
10
4
ns
ns
ns
ns
nC
V
DD
= 75 V, I
D
= 2 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
Q
g(TOT)
Q
g(TOT)
Q
gs
T
o
tal Gate Charge
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
V
GS
= 0 V to 5 V
V
DD
= 75 V,
3
I
D
= 2 A
nC
nC
Q
gd
Drain-Source Diode Characteristics
V
SD
t
rr
Source to Drain Diode
Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= 2 A
(Note 2)
0.84
44
1.3
71
49
V
ns
nC
I
F
= 2 A, di/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
31
NOTES:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
a)
55 °C/W when mounted on a
1 in
pad of
2 oz
copper
b) 118
°C/W when mounted on
a minimum pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
3. Starting T
= 25
°
C; N-ch: L = 1.0 mH, I
= 4.0 A, V
= 135 V, V
= 10 V.
J
AS
DD
GS
©2010 Fairchild Semiconductor Corporation
FDT86246 Rev.C
2
Typical Characteristics
T
J
= 25 °C unless otherwise noted
8
3.0
2.5
2.0
1.5
1.0
0.5
V
GS
= 10 V
V
GS
= 7 V
V
GS
= 5 V
V
GS
= 6 V
6
V
GS
= 5.5 V
V
GS
= 5.5 V
4
V
GS
= 6 V
V
GS
= 5 V
2
V
GS
= 10 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 7 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
0
2
4
6
8
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
2.4
800
I
D
= 2 A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 2 A
V
GS
= 10 V
2.0
1.6
1.2
0.8
0.4
600
400
200
0
T
J
= 125
o
C
T
J
= 25
o
C
-75 -50 -25
0
25 50 75
100 125 150
4
6
8
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
F ig u re 3.
No rmal i zed
O n-Re si stan ce
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
8
10
V
GS
= 0 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
6
1
V
DS
= 5 V
T
J
= 150
o
C
T
J
= 150
o
C
T
J
= 25
o
C
4
0.1
0.01
T
J
= 25
o
C
2
T
J
= -55
o
C
T
J
= -55
o
C
0
0.001
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDT86246 Rev.C
3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
10
500
100
I
D
= 2 A
C
iss
V
DD
= 50 V
8
V
DD
= 75 V
C
oss
6
V
DD
= 100 V
4
2
0
10
1
C
rss
f = 1 MHz
= 0 V
V
GS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
5
4
3
2
1
0
7
6
5
T
J
= 25
o
C
4
3
V
GS
= 10 V
T
J
= 100
o
C
V
GS
= 6 V
2
T
J
= 125
o
C
R
θ
JC
= 12
o
C/W
50
1
25
75
100
125
150
0.001
0.01
0.1
1
T
C
,
CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs
Case Temperature
10
1
300
SINGLE PULSE
R
θ
JA
= 118
o
C/W
100
T
A
= 25
o
C
100
μ
s
1 ms
THIS AREA IS
10
LIMITED BY r
10 ms
100 ms
DS(on)
0.1
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 11
8
o
C/W
1 s
10 s
DC
T
A
= 25
o
C
1
0.01
0.005
0.5
10
-4
0.1
1
10
100
500
10
-3
10
-2
t, PULSE WIDTH (sec)
10
-1
1
10
100 1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse Maximum
Power Dissipation
©2010 Fairchild Semiconductor Corporation
FDT86246 Rev.C
4
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
P
DM
0.1
0.01
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
/t
R
θ
JA
= 118
o
C/W
1
2
0.01
PEAK T
= P
J
x Z
x R
+ T
DM
θ
JA
θ
JA
A
0.005
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13.
Junction-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDT86246 Rev.C
5
6.70
6.20
B
0.10
C B
3.10
2.90
3.25
4
1.90
A
3.70
3.30
6.10
1.90
1
3
0.84
0.60
2.30
2.30
0.95
4.60
0.10
C B
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.80 MAX
7.30
6.70
0.08
C
C
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING
BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
R0.15±0.05
R0.15±0.05
10°
5°
GAGE
PLANE
0.35
0.20
E) LANDPATTERN
NAME: SOT230P700X180-4BN
F) DRAWING
FILENAME: MKT-MA04AREV3
10°
0°
TYP
0.25
10°
5°
0.60 MIN
SEATING
PLANE
1.70
DETAIL A
SCALE: 2:1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
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Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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