onsemi-FDU5N50NZTU
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FDU5N50NZTU
Power MOSFE
T
,
N
-Channel,
UniFET
t
II
500
V
, 4
A
, 1.5
W
UniFET II MOSFET is ON Semiconductor’s high voltage MOSFET
family based on advanced planar stripe and DMOS technology. This
advanced MOSFET family has the smallest on
−
state resistance among
the planar MOSFET, and also provides superior switching performance
and higher avalanche energy strength. In addition, internal
gate
−
source ESD diode allows UniFET II MOSFET to withstand over
2 kV HBM surge stress. This device family is suitable for switching
power converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power,
A
T
X and electronic lamp ballasts.
D
G
Features
S
•
R
= 1.38
ꢀ
(Typ.) @ V
= 10
V
, I
= 2 A
GS D
DS(on)
•
Low Gate Charge (Typ. 9 nC)
•
Low C
(Typ. 4 pF)
rss
•
100% Avalanche Tested
•
Improved dv/dt Capability
•
ESD Improved Capability
•
These Devices are Pb
−
Free and are RoHS Compliant
Applications
IPAK3
CASE 369AR
•
LCD / LED TV
•
Lighting
•
Charger / Adapter
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2019
−
Rev. 1
FDU5N50NZTU/D
FDU5N50NZTU
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Value
Unit
V
V
DSS
V
GSS
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
Drain Current
500
25
V
I
D
Continuous (T
= 25
°
C)
4
A
C
Continuous (T
= 100
°
C)
2.4
C
I
I
Drain Current
16
A
mJ
A
DM
E
AS
304
4
AR
E
Power Dissipation
6.2
mJ
V/ns
W
AR
dv/dt
10
62
P
T =
25
°
C
C
D
Derate Above 25
°
C
0.5
W/
°
C
°
C
T , T
Operating and Storage
T
e
mperature Range
−
55 to +150
300
J
STG
T
L
Maximum Lead
T
e
mperature for Soldering Purposes (1/8
″
from case for 5 seconds)
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive
Rating: Pulse width limited by maximum junction temperature.
2. I
= 4 A, V
= 50
V
, L =
3
8 mH, R
= 25
ꢀ
, starting T
= 25
°
C.
AS
DD
G
DSS
J
3. I
≤
4 A, di/dt
≤
200 A/
ꢁ
s, V
≤
BV
, Starting T
= 25
°
C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
2.0
Unit
Thermal Resistance, Junction
−
to
−
Case
Thermal Resistance, Junction
−
to
−
Ambient
°
C/W
R
ꢂ
JC
JA
R
90
ꢂ
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDU5N50NZTU
FDU5N50NZ
IPAK
Tube
N/A
N/A
75 units
2
FDU5N50NZTU
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
C
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain
−
to
−
Source Breakdown Voltage
I
D
= 250
ꢁ
A, V
= 0
V
, T
=
2
5
°
C
500
V
DSS
GS
J
ꢃ
B
V
/
ꢃ
T
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
ꢁ
A, Referenced to 25
°
C
0.5
V/
°
C
DSS
J
I
Zero Gate Voltage Drain Current
V
= 500
V
, V
= 0 V
1
ꢁ
A
ꢁ
A
DSS
DS
GS
V
DS
= 400
V
, T
=
1
25
°
C
10
10
C
I
Gate
−
to
−
Body Leakage Current
V
GS
= 25
V
, V
= 0 V
DS
GSS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
= V
, I
= 250
ꢁ
A
3.0
5.0
1.5
V
ꢀ
S
GS(th)
DS(on)
GS
DS
D
R
Static Drain
−
to
−
Source On Resistance
Forward Transconductance
V
V
= 10
V
, I
= 2 A
1.38
3.54
GS
DS
D
g
FS
= 20
V
, I
= 2 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 25
V
, V
= 0 V, f = 1
M
Hz
330
50
4
440
70
6
pF
nC
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
T
o
tal Gate Charge at 10 V
Gate
−
to
−
Source Gate Charge
Gate
−
to
−
Drain “Miller” Charge
rss
Q
V
DS
= 400
V
, I
= 4
A
,
9
12
g(tot)
D
V
GS
Q
2
gs
Q
4
gd
SWITCHING CHARACTERISTICS
t
Turn
−
On Delay Time
Turn
−
On Rise Time
Turn
−
Off Delay Time
Turn
−
Off Fall Time
V
= 250
V
, I
= 4
A
,
12
22
28
21
35
55
65
50
ns
d(on)
DD
D
V
GS
G
t
r
t
d(off)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
I
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
4
A
S
I
16
1.4
SM
V
SD
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
= 0
V
, I
= 4 A
V
GS
SD
t
rr
V
GS
= 0
V
, I
= 4
A
,
dI /dt
= 100 A/
ꢁ
s
210
1.1
ns
ꢁ
C
SD
F
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially
independent of Operating
T
e
mperature Typical Characteristics.
3
FDU5N50NZTU
TYPICAL CHARACTERISTICS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On
−
Resistance Variation vs. Drain
Figure 4. Body Diode Forward Voltage
Current and Gate Voltage
Variation vs. Source Current and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
FDU5N50NZTU
TYPICAL CHARACTERISTICS
Figure 7. Breakdown Voltage Variation vs.
Figure 8. On
−
Resistance Variation vs.
Temperature
Temperature
Figure 9. Maximum Safe Operating Area vs.
Case Temperature
Figure 10. Maximum Drain Current
P
DM
t
1
t
2
Figure 11. Transient Thermal Response Curve
5
FDU5N50NZTU
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
6
FDU5N50NZTU
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
UniFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (IPAK)
CASE 369AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13815G
DPAK3 (IPAK)
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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−
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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−
282
−
9855
T
o
ll Free USA/Canada
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