onsemi-FDU6682-NL
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June 2004
FDD6682/FDU6682
30V N-Channel PowerTrench
Ò
MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
and fast switching speed.
·
75 A, 30 V
R
DS(ON)
= 6.2 m
W
@ V
GS
= 10 V
R
DS(ON)
= 8.0 m
W
@ V
GS
= 4.5 V
·
·
·
Low gate charge
Fast switching
Applications
High performance trench technology for extremely
low R
DS(ON)
·
·
DC/DC converter
Motor Drives
D
D
G
S
I-PAK
(TO-251AA)
G
D-PAK
(TO-252)
G D S
S
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
V
30
V
GSS
Gate-Source Voltage
±
20
I
D
Drain Current
– Continuous
– Pulsed
(Note 3)
(Note 1a)
(Note 1)
75
100
A
P
D
W
Power Dissipation for Single Operation
71
(Note 1a)
(Note 1b)
3.8
1.6
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +175
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
2.1
40
96
R
q
JC
R
q
JA
R
q
JA
°
C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
FDD6682
FDU6682
Package
Reel Size
13’’
Tape width
Quantity
FDD6682
D-PAK (TO-252)
I-PAK (TO-251)
12mm
N/A
2500 units
75
FDU6682
Tube
FDD6682/FDU6682 Rev H(W)
Ó
2004 Fairchild Semiconductor Corporation
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
I
AR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V
DD
= 15 V, I
D
= 17 A
240
17
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
30
V
V
GS
= 0 V,
I
D
= 250
m
A
D
BV
DSS
D
T
J
Breakdown Voltage Temperature
Coefficient
20
I
D
= 250
m
A, Referenced to 25
°
C
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
DS
= 24 V,
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
1
m
A
I
GSS
nA
V
±
100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
1
1.9
–7
3
V
V
DS
= V
GS
,
I
D
= 250
m
A
Gate Threshold Voltage
Temperature Coefficient
D
V
GS(th)
D
T
J
I
D
= 250
m
A, Referenced to 25
°
C
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V,
GS
= 4.5 V,
V
GS
= 10 V,
I
D
= 17 A, T
J
=125
°
C
I
D
= 17 A
I
D
= 15 A
5.2
6.4
8.0
6.2
8
11.9
m
W
V
I
D(on)
g
FS
On–State Drain Current
V
GS
= 10 V,
V
DS
= 5 V,
V
DS
= 5 V
I
D
= 17 A
50
A
S
Forward Transconductance
65
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
2400
577
258
1.4
pF
pF
pF
W
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1.0 MHz
V
GS
= 15 mV,
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
14
12
38
18
24
6.5
8.1
20
37
64
32
31
ns
ns
V
DD
= 15 V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
W
ns
ns
Q
g
Q
gs
Q
gd
nC
nC
nC
V
DS
= 15V,
V
I
D
= 17 A,
GS
= 5 V
FDD6682/FDU6682 Rev H(W)
Electrical Characteristics
(continued)
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
3.2
1.2
A
V
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 3.2 A
(Note 2)
0.7
t
rr
Diode Reverse Recovery Time
I
F
= 17 A,
d
iF
/d
t
= 100 A/µs
32
20
nS
nC
Q
rr
Diode Reverse Recovery Charge
Notes:
1.
R
q
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
q
JC
is guaranteed by design while R
q
CA
is determined by the user’s board design.
a)
R
q
JA
= 40°C/W when mounted on a
b)
R
q
JA
= 96°C/W when mounted
1in
2
pad of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
P
D
3.
Maximum current is calculated as:
R
DS(ON)
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V.
Package current limitation is 21A
FDD6682/FDU6682 Rev H(W)
Typical Characteristics
100
2
1.8
1.6
1.4
1.2
1
V
GS
= 3.5V
V
GS
=10V
4.0V
80
6.0V
4.5V
3.5V
4.0V
60
4.5V
40
20
0
5.0V
3.0V
10V
0.8
0
20
40
60
80
100
0
1
2
3
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
1.8
1.6
1.4
1.2
1
0.02
I
D
= 8.5A
I
D
= 17A
V
GS
= 10V
0.015
0.01
0.005
0
T
A
= 125
o
C
T
A
= 25
o
C
0.8
0.6
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
80
100
V
GS
= 0V
V
DS
= 5V
10
1
60
40
20
0
T
A
= 125
o
C
25
o
C
0.1
-55
o
C
0.01
0.001
0.0001
T
A
=125
o
C
25
o
C
-55
o
C
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6682/FDU6682 Rev H(W)
Typical Characteristics
3500
3000
2500
2000
1500
1000
500
10
f = 1MHz
V
GS
= 0 V
V
DS
= 10V
I
D
= 17A
15V
C
ISS
8
6
4
2
0
20V
C
OSS
C
RSS
0
0
10
20
30
40
50
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
1000
100
10
100
80
60
40
20
0
SINGLE PULSE
R
q
JA
= 96°C/W
100µs
T
A
= 25°C
R
DS(ON)
LIMIT
1ms
10ms
100ms
1s
10s
DC
1
V
GS
= 10V
SINGLE PULSE
R
q
JA
= 96
o
C/W
T
A
= 25
o
C
0.1
0.01
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
t
1
, TIME (sec)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
R
q
JA
(t) = r(t) * R
q
JA
0.2
R
q
JA
= 96 °C/W
0.1
0.1
0.05
0.02
P(pk)
t
1
0.01
t
2
0.01
T
J
– T
A
= P * R
q
JA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6682/FDU6682 Rev H(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Power247™
PowerSaver™
PowerTrench
QFET
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT
™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
QS™
QT Optoelectronics™
TinyLogic
Quiet Series™
RapidConfigure™
RapidConnect™
µ
SerDes™
TINYOPTO™
TruTranslation™
UHC™
HiSeC™
I
2
C™
i-Lo
™
ImpliedDisconnect™
UltraFET
FACT Quiet Series™
SILENT SWITCHER
VCX™
SMART START™
SPM™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Across the board. Around the world.™
The Power Franchise
Programmabl
e
A
ctive Droop™
Stealth™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVE
S
T
HE RIGH
T
T
O MAKE CHANGES WITHOU
T
F
URTHER NOTIC
E
T
O
A
NY
PRODUCTS HEREI
N
T
O IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD DOES NO
T
A
SSUM
E
A
N
Y
L
IABILITY
ARISING OU
T
O
F
T
H
E
A
PPLICATION OR USE O
F
A
N
Y
P
RODUC
T
O
R CIRCUI
T
D
ESCRIBED HEREIN; NEITHER DOES IT
CONVE
Y
A
N
Y
L
ICENSE UNDER ITS PATEN
T
R
IGHTS, NO
R
T
HE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOU
T
T
HE EXPRESS WRITTE
N
A
PPROVA
L
O
F FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
