onsemi-FDY3000NZ
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January 2007
tm
FDY3000NZ
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
Features
This Dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
DS(ON)
@ V
GS
= 2.5v.
x
600 mA, 20 V
R
DS(ON)
= 700
m
:
ꢀ
@ V
GS
= 4.5 V
R
DS(ON)
= 850
m
:
@ V
GS
= 2.5 V
Applications
x
ESD protection diode (note 3)
x
RoHS Compliant
x
Li-Ion Battery Pack
6
5
4
D
1
6
S
1
G
1
D
2
1
5
4
G
2
S
2
2
3
1
2
3
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
20
r
12
V
V
V
GSS
I
D
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
(Note 1a)
600
1000
mA
P
D
Power Dissipation (Steady State)
(Note 1a)
(Note 1b)
625
446
mW
T
J
, T
STG
Operating and Storage Junction Temperature
Range
–55 to +150
q
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
Thermal Resistance, Junction-to-Ambient
(Note 1b)
200
280
R
T
JA
R
T
JA
q
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
C
FDY3000NZ
7 ’’
8 mm
3000 units
200
7
Fairchild Semiconductor Corporation
FDY3000NZ Rev
B
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown
20
V
V
GS
= 0 V,
I
D
= 250
P
A
Voltage
Breakdown Voltage Temperature
14
‘
BV
DSS
ꢀꢀꢀ’
T
J
I
DSS
I
D
= 250
P
A, Referenced to 25
q
C
mV/
q
C
Coefficient
Zero Gate Voltage Drain Current
V
DS
= 16 V,
V
GS
= 0 V
V
GS
=
r
12 V,
V
DS
= 0 V
V
GS
=
r
4.5 V,
V
DS
= 0 V
1
r
10
r
1
P
A
P
A
P
A
I
GSS
Gate–Body Leakage,
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
0.6
1.0
–
3
1.
3
V
V
DS
= V
GS
,
I
D
= 250
P
A
Gate Threshold Voltage
‘
V
GS(th)
ꢀꢀꢀ’
T
J
R
DS(on)
I
D
= 250
P
A, Referenced to 25
q
C
mV/
q
C
Temperature Coefficient
Static Drain–Source
On–Resistance
V
GS
= 4.5 V,
V
GS
= 2.5 V,
V
GS
= 1.8 V,
V
GS
= 4.5 V, I
D
=600mA, T
J
= 125
q
C
V
DS
= 5 V,
I
D
= 600 mA
I
D
= 500 mA
I
D
= 150 mA
0.25 0.70
0.37 0.85
0.73 1.25
0.35 1.00
:
g
FS
Forward Transconductance
I
D
= 600 mA
1.8
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
60
20
10
pF
pF
pF
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
8
12
16
ns
ns
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
:
8
16
ns
2.4
0.8
0.16
0.26
4.8
1.1
ns
Q
g
Q
gs
Q
gd
nC
nC
nC
V
DS
= 10 V,
I
D
= 600 mA,
V
GS
= 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 150 mA
(Note 2)
0.7
1.2
V
t
rr
Diode Reverse Recovery Time
I
F
= 600 mA,
dI
F
/dt = 100 A/µs
8
1
nS
nC
Q
rr
Diode Reverse Recovery Charge
Notes:
1
.
R
T
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
T
JC
is guaranteed by design while R
T
CA
is determined by the user’s board design
a)
200°C/W when
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
mounted on a 1in
2
pad
of 2 oz copper
2
.
Pulse Test: Pulse Width < 300
P
s,
Duty Cycle
< 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD.
No gate overvoltage
rating is implied.
FDY3000NZ Rev
B
Typical Characteristics
1
2.6
2.4
2.2
2
V
GS
= 4.5V
3.5V
3.0V
2.5V
V
GS
= 2.0V
0.8
0.6
0.4
0.2
0
2.0V
1.8
1.6
1.4
1.2
1
2.5V
3.0V
3.5V
4.5V
0.8
0
0.2
0.4
0.6
0.8
1
0
0.25
0.5
0.75
1
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1
1.6
I
D
= 600mA
I
D
= 300mA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
GS
= 4.5V
1.4
1.2
1
T
A
= 125
o
C
T
A
= 25
o
C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
1
V
GS
= 0V
V
DS
= 5V
0.8
0.1
T
A
= 125
o
C
0.6
0.4
0.2
0
0.01
25
o
C
T
A
= 125
o
C
-55
o
C
25
o
C
-55
o
C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
V
SD
, BODY DIODE FORW
ARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDY3000NZ Rev
B
Typical Characteristics
5
100
90
80
70
60
50
40
30
20
10
0
f = 1MHz
GS
= 0 V
I
D
= 600mA
V
4
V
DS
= 5V
C
iss
10V
15V
3
2
1
0
C
oss
C
rss
0
0.2
0.4
0.6
0.8
1
0
4
8
12
16
20
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
30
25
20
15
10
5
SINGLE PULSE
R
T
JA
= 280°C/W
T
A
= 25°C
R
DS(ON)
LIMIT
1ms
1
0.1
10ms
100ms
10s
1s
DC
V
GS
= 4.5V
SINGLE PULSE
R
T
JA
= 280
o
C/W
T
A
= 25
o
C
0
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
t
1
, TIME (sec)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
T
JA
(t) = r(t) * R
T
JA
R
T
JA
=280 °C/W
0.2
P(pk)
0.1
0.1
0.05
t
1
t
2
0.02
0.01
T
J
– T
A
= P * R
T
JA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDY3000NZ Rev
B
SOT−563
CASE 419BH
ISSUE O
1.70
1.50
A
B
6
1
4
1.42
0.72
1.30
1.10
1.70
1.50
0.1 C B A
3
0.30
0.50
0.20
0.50
0.50
LAND PATTERN
RECOMMENDATION
TOP VIEW
0.60
0.50
C
SEATING PLANE
0.10
0.00
0.20
0.08
0.05 C
C
NOTES: UNLESS OTHERWISE SPECIFIED.
A. REFERENCE TO JEDEC MO293.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C
DOES NOT COMPLY JEDEC STANDARD VALUE
0.30
0.10
0.46
0.20
C
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSION.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
F. LANDPATTERN RECOMMENDATION GENERATED
WITH IPC LANDPATTERN GENERATOR
0.31
0.15
0.10
0.05
M
M
C A B
C
BOTTOM VIEW
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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