onsemi-FDY301NZ
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January 2006
FDY301NZ
Single N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
Features
This Single N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
DS(ON)
@ V
GS
= 2.5v.
•
200 mA, 20 V
R
DS(ON)
= 5
Ω
@ V
GS
= 4.5 V
DS(ON)
= 7
Ω
@ V
GS
= 2.5 V
R
Applications
•
ESD protection diode (note 3)
•
RoHS Compliant
•
Li-Ion Battery Pack
S
G
S
1
2
G
3
D
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
20
Units
V
V
GSS
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
V
±
12
200
I
D
(Note 1a) 1a)
mA
1000
P
D
Power Dissipation (Steady State)
(Note 1a) 1a)
(Note 1b) 1
625
mW
446
T
J
, T
STG
Operating and Storage Junction Temperature
Range
–55 to +150
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a) 1a)
200
280
R
θ
JA
°
C/W
Thermal Resistance, Junction-to-Ambient
(Note 1b) 1
R
θ
JA
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
D
FDY301NZ
7’’
8 mm
3000units
2006 Fairchild Semiconductor Corporation
FDY301NZ Rev A
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown
20
V
V
GS
= 0 V,
I
D
= 250
µ
A
Voltage
Breakdown Voltage Temperature
Coefficient
14
∆
BV
DSS
∆
T
J
I
D
= 250
µ
A, Referenced to 25
°
C
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16 V,
Gate–Body Leakage,
V
GS
= 0 V
1
µ
A
µ
A
µ
A
I
GSS
V
GS
=
±
12 V,
V
DS
= 0 V
±
10
±
1
V
GS
=
±
4.5 V,
V
DS
= 0 V
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
0.6
–
1.5
V
V
DS
= V
GS
,
I
D
= 250
µ
A
Gate Threshold Voltage
Temperature Coefficient
2.8
∆
V
GS(th)
∆
T
J
R
DS(on)
I
D
= 250
µ
A, Referenced to 25
C
mV/
°
C
Static Drain–Source
On–Resistance
V
GS
= 4.5 V,
V
GS
= 2.5 V,
I
D
= 200 mA
I
D
= 175 mA
I
D
= 150 mA
I
D
= 20 mA
5
7
9
10
7
Ω
V
GS
= 1.8 V,
V
GS
= 1.5 V
V
GS
= 4.5 V, I
D
=200mA, T
J
= 125
°
C
g
FS
Forward Transconductance
V
DS
= 5 V,
I
D
= 200 mA
1.1
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
60
20
10
pF
pF
pF
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
8
12
16
ns
ns
V
DD
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
V
GS
= 4.5 V,
8
16
ns
2.4
0.8
0.16
0.26
4.8
1.1
ns
Q
g
Q
gs
Q
gd
nC
nC
nC
V
DS
= 10 V,
GS
= 4.5 V
I
D
= 200 mA,
V
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 150 mA
(Note 2)
0.7
1.2
V
t
rr
Diode Reverse Recovery Time
I
F
= 200 mA,
dI
F
/dt = 100 A/µs
12
3
nS
nC
Q
rr
Diode Reverse Recovery Charge
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user’s board design.
a)
200°C/W when
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
mounted on a 1in
2
pad
of 2 oz copper
2
.
Pulse Test: Pulse Width < 300
µ
s,
Duty Cycle
< 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD.
No gate overvoltage
rating is implied.
FDY301NZ Rev A
Typical Characteristics
1
3.4
3.2
3
V
GS
= 4.5V
3.5V
3.0V
2.5V
V
GS
= 1.8V
0.8
0.6
0.4
0.2
0
2.8
2.6
2.4
2.2
2
2.0V
2.0V
1.8V
1.8
1.6
1.4
1.2
1
2.5V
3.0V
3.5V
0.8
1.5V
4.5V
0.8
0
0.2
0.4
0.6
1
0
0.25
0.5
0.75
1
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1
1.6
1.4
1.2
1
I
D
= 200mA
V
GS
= 4.5V
I
D
= 100mA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T
A
= 125
o
C
0.8
0.6
T
A
= 25
o
C
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1.5
1
25
o
C
T
A
= -55
o
C
V
GS
= 0V
V
DS
= 5V
1.2
0.9
0.6
0.3
0
0.1
125
o
C
T
A
= 125
o
C
0.01
25
o
C
-55
o
C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
3
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDY301NZ Rev A
Typical Characteristics
5
100
90
80
70
60
50
40
30
20
10
0
f = 1MHz
V
GS
= 0 V
I
D
= 600mA
4
C
iss
V
DS
= 5V
10V
3
2
1
0
15V
C
oss
C
rss
0
0.2
0.4
0.6
0.8
1
0
4
8
12
16
20
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
10
SINGLE PULSE
R
θ
JA
= 280°C/W
T
A
= 25°C
R
DS(ON)
LIMIT
1ms
1
0.1
10ms
100ms
10s
1s
DC
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 280
o
C/W
T
A
= 25
o
C
0
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
t
1
, TIME (sec)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
=280 °C/W
0.2
P(pk)
0.1
0.1
0.05
t
1
t
2
0.02
0.01
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDY301NZ Rev A
Dimensional Outline and Pad Layout
1.70
1.50
0.35
0.25
0.50
0.50
3
1.70
1.50
0.98
0.78
1.14
1.80
1
2
(0.15)
0.50
0.66
0.50
1.00
LAND PATTERN RECOMMENDATION
0.78
0.58
0.20
0.04
SEE DETAIL A
0.43
0.28
0.54
0.34
DETAIL A
0.10
0.00
SCALE 2 : 1
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC89 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
FDY301NZ Rev A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
®
ACEx™
PowerSaver™
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
®
PowerTrench
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT
™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
QFET
QS™
®
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μ
SerDes™
ScalarPump™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
HiSeC™
I
2
C™
MSXPro™
OCX™
®
UltraFET
i-Lo
™
ImpliedDisconnect™
IntelliMAX™
UniFET™
VCX™
Wire™
OCXPro™
OPTOLOGIC
®
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
FACT Quiet Series™
Across the board. Around the world.™
®
The Power Franchise
SuperFET™
SuperSOT™-3
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVE
S
T
HE RIGH
T
T
O MAKE CHANGES WITHOU
T
F
URTHER NOTIC
E
T
O
A
NY
PRODUCTS HEREI
N
T
O IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD DOES NO
T
A
SSUM
E
A
N
Y
L
IABILITY
ARISING OU
T
O
F
T
H
E
A
PPLICATION OR USE O
F
A
N
Y
P
RODUC
T
O
R CIRCUI
T
D
ESCRIBED HEREIN; NEITHER DOES IT
CONVE
Y
A
N
Y
L
ICENSE UNDER ITS PATEN
T
R
IGHTS, NO
R
T
HE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOU
T
T
HE EXPRESS WRITTE
N
A
PPROVA
L
O
F FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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