onsemi-FDZ7064N
| Part # | onsemi-FDZ7064N |
Download  | onsemi-FDZ7064N |
May 2004
FDZ7064N
30V N-Channel Logic Level PowerTrench
BGA MOSFET
General Description
Features
Combining Fairchild’s 30V PowerTrench process with
state of the art BGA packaging, the FDZ7064N
•
13.5 A, 30 V.
R
DS(ON)
= 8.0 m
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 7.0 m
Ω
@ V
GS
= 10 V
minimizes both PCB space and R
DS(ON)
.
This BGA
MOSFET embodies
breakthrough in packaging
a
•
Occupies only 14 mm
2
of PCB area.
Only 42% of
the area of SO-8
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low R
DS(ON)
.
•
Ultra-thin package:
less than 0.8 mm height when
mounted to PCB
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications resulting in DC/DC power supply
designs with higher overall efficiency.
•
3.5 x 4 mm
2
Footprint
•
High power and current handling capability.
Applications
•
DC/DC converters
•
Solenoid drive
D
Pi
n
1
D
D
D
D
D
D
S
S
S
G
D
S
S
S
S
D
S
S
S
S
D
S
S
S
S
D
D
D
D
D
G
Pin 1
S
Top
Bottom
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
±
12
V
V
A
V
GSS
I
D
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
(Note 1a)
(Note 1a)
13.5
60
2.2
P
D
Power Dissipation (Steady State)
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
R
θ
JB
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
(Note 1)
56
4.5
0.6
°
C/W
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
7064N
FDZ7064N
13”
12mm
3000
2004 Fairchild Semiconductor Corporation
FDZ7064N Rev.D4 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
Drain
–Source Breakdown Voltage
V
GS
= 0 V,
I
D
= 250
µ
A
30
V
∆
BV
DSS
∆
T
J
I
D
= 250
µ
A, Referenced to 25
°
C
mV/
°
C
Breakdown Voltage Temperature
Coefficient
21
I
DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
= 24 V,
V
GS
= 12 V,
V
GS
= 0 V
V
DS
= 0 V
1
µ
A
nA
nA
I
GSSF
I
GSSR
100
–100
V
GS
= –12 V,
V
DS
= 0 V
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
µ
A
0.8
1.2
2.0
V
∆
V
GS(th)
∆
T
J
I
D
= 250
µ
A, Referenced to 25
°
C
mV/
°
C
Gate Threshold Voltage
Temperature Coefficient
–4.6
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 4.5 V,
I
D
= 13.5 A
6.1
5.4
9.0
8.0
7.0
13
m
Ω
V
GS
= 10 V,
I
D
= 14.5 A
V
GS
= 4.5 V, I
D
= 13.5A, T
J
=125
°
C
g
FS
Forward Transconductance
V
DS
= 10 V,
I
D
= 13.5 A
V
GS
= 0 V,
92
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
3843
522
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
209
Switching Characteristics
(Note 2)
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
9
20
18
ns
ns
71
18
31
8
114
32
ns
ns
V
DS
= 15 V,
V
GS
= 4.5 V
I
D
= 13.5 A,
Q
g
Q
gs
Q
gd
43
nC
nC
nC
7.4
Drain
–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain
–Source Diode Forward Current
1.8
1.2
A
V
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 1.8 A
(Note 2)
0.7
V
SD
t
rr
Diode Reverse Recovery Time
30
35
nS
nC
I
F
= 13.5 A,
d
iF
/d
t
= 100 A/µs
Q
rr
Diode Reverse Recovery Charge
Notes:
1.
R
θ
JA
is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the
circuit board side of the solder ball, R
θ
JB
, is defined for reference. For R
θ
JC
, the thermal reference point for the case is defined as the top surface of the copper
chip carrier. R
θ
JC
and R
θ
JB
are guaranteed by design while R
θ
JA
is determined by the user’s board design.
a)
56°C/W when
b)
119°C/W when mounted
on a minimum pad of 2 oz
copper
mounted on a 1in
2
pad
of 2 oz copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width <
300
µ
s, Duty Cycle < 2.0%
FDZ7064N Rev D4 (W)
Dimensional Outline and Pad Layout
FDZ7064N Rev D4 (W)
Typical Characteristics
2
1.8
1.6
1.4
1.2
1
60
V
GS
= 10V
3.0V
2.5V
50
4.5V
V
GS
= 2.5V
40
30
20
10
0
3.0V
3.5V
4.5V
6.0V
2.0V
10V
0.8
0
10
20
30
40
50
60
0
0.5
1
1.5
2
175
3
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.022
1.6
1.4
1.2
1
I
D
= 13.5A
V
GS
= 10V
I
D
=6.8 A
0.018
0.014
0.01
T
A
= 125
o
C
T
A
= 25
o
C
0.8
0.6
0.006
0.002
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
60
V
GS
= 0V
V
DS
= 5V
10
1
50
40
30
20
10
0
T
A
= 125
o
C
25
o
C
25
o
C
T
A
= 125
o
C
0.1
-55
o
C
-55
o
C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1
1.5
2
2.5
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ7064N Rev D4 (W)
Typical Characteristics
10
5000
4000
3000
2000
1000
0
f = 1MHz
GS
= 0 V
I
D
= 13.5A
V
V
DS
= 10V
20V
C
ISS
15V
8
6
4
2
0
C
OSS
C
RSS
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
1000
100
10
SINGLE PULSE
R
θ
JA
= 119°C/W
T
A
= 25°C
100us
R
DS(ON)
LIMIT
1ms
10ms
100ms
1s
10s
1
DC
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 119
o
C/W
T
A
= 25
o
C
0.1
0.01
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 119 °C/W
0.2
0.1
0.1
P(pk)
0.05
0.02
t
1
t
2
0.01
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ7064N Rev D4 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Power247™
PowerSaver™
PowerTrench
QFET
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT
™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
QS™
QT Optoelectronics™
TinyLogic
Quiet Series™
RapidConfigure™
RapidConnect™
µ
SerDes™
TINYOPTO™
TruTranslation™
UHC™
HiSeC™
I
2
C™
i-Lo
™
ImpliedDisconnect™
UltraFET
FACT Quiet Series™
SILENT SWITCHER
VCX™
SMART START™
SPM™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Across the board. Around the world.™
The Power Franchise
Programmabl
e
A
ctive Droop™
Stealth™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVE
S
T
HE RIGH
T
T
O MAKE CHANGES WITHOU
T
F
URTHER NOTIC
E
T
O
A
NY
PRODUCTS HEREI
N
T
O IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD DOES NO
T
A
SSUM
E
A
N
Y
L
IABILITY
ARISING OU
T
O
F
T
H
E
A
PPLICATION OR USE O
F
A
N
Y
P
RODUC
T
O
R CIRCUI
T
D
ESCRIBED HEREIN; NEITHER DOES IT
CONVE
Y
A
N
Y
L
ICENSE UNDER ITS PATEN
T
R
IGHTS, NO
R
T
HE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOU
T
T
HE EXPRESS WRITTE
N
A
PPROVA
L
O
F FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
