onsemi-FFB5551

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products, including compliance with all laws,  

regulations and safety requirements or standards, regardless of any support or applications information provided by

 

onsemi

. “

T

ypical” parameters which may be provided in

onsemi

data sheets and/  

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application  

by customer’s technical experts.

onsemi

does not convey any license under any of its intellectual property rights nor the rights of others.

onsemi

products are not designed, intended, or authorized  

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for  

implantation in the human body. Should Buyer purchase or use

onsemi

products for any such unintended or unauthorized application, Buyer shall indemnify and hol

d

onsemi

and its officers, employees,  

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  

associated with such unintended or unauthorized use, even if such claim alleges that

onsemi

was negligent regarding the design or manufacture of the part.

 

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is an Equal Opportunity/Affirmative  

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.  

FFB5551  

Dual-Chip NPN General-Purpose Amplifier  

Features  

• This

 

device is designed for general-purpose high voltage amplifier.  

• E1

 

is Pin 1.  

E2  

B2  

E2  

C2  

B1  

E1  

C1  

B2  

C2  

B1  

C1  

E1  

SC70-6  

Mark: .P1  

Figure 1. Device Package  

Figure 2. Internal Connection  

Ordering Information  

Part Number  

Top Mark  

Package  

SC70 6L  

Packing Method  

FFB5551  

P1  

T

a

pe and Reel  

Absolute Maximum Ratings

(1),(2)  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  

absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

V

CEO  

Parameter  

Value  

160  

Unit  

V

Collector-Emitter Voltage  

Collector-Base Voltage  

Emitter-Base Voltage  

V

CBO  

180  

V

V

EBO  

6.0  

V

I

C  

Collector Current – Continuous  

200  

mA  

°C  

T

J

, T

STG  

Operating and Storage Junction

T

e

mperature Range  

-55 to 150  

Notes:  

1.

These ratings are based on a maximum junction temperature of 150

°

C.  

2.

These are steady-state limits.

ON

Semiconductor should be consulted on applications involving pulsed or low-  

duty-cycle operations.  

© 2003

Semiconductor Components Industries, LLC.  

October-2017,

Rev.

2  

Publication Order Number:  

FFB5551/D  

Thermal Characteristics

(3)  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

P

D  

Parameter  

Max.  

200  

1.6  

Unit  

mW  

T

o

tal Device Dissipation  

Derate Above 25

°

C  

mW/

°

C  

°

C/W  

R

θ

JA  

Thermal Resistance, Junction-to-Ambient  

625  

Note:  

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  

Electrical Characteristics  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

BV

CEO  

BV

CBO  

BV

EBO  

Parameter  

Conditions  

Min.  

160  

180  

6.0  

Max.  

Unit  

V

Collector-Emitter Breakdown Voltage

(4)

I

C

= 1.0 mA, I

B

= 0  

Collector-Base Breakdown Voltage  

Emitter-Base Breakdown Voltage  

I

C

= 100

μ

A, I

E

= 0  

I

E

= 10

μ

A, I

C

= 0  

V

V

V

50  

50  

50  

nA  

I

CBO  

I

EBO  

Collector Cut-Off Current  

Emitter Cut-Off Current  

V

CB

= 120

V

, I

E

= 0,  

T

A

= 100°C  

μ

A  

V

EB

= 4.0 V, I

C

= 0  

nA  

V

CE

= 5 V, I

C

= 1.0 mA  

V

CE

= 5 V, I

C

= 10 mA  

V

CE

= 5 V, I

C

= 50 mA  

I

C

= 10 mA, I

B

= 1.0 mA  

I

C

= 50 mA, I

B

= 5.0 mA  

I

C

= 10 mA, I

B

= 1.0 mA  

I

C

= 50 mA, I

B

= 5.0 mA  

80  

80  

30  

h

FE  

DC Current Gain

(4)  

250  

0.15  

0.20  

1.0  

V

Collector-Emitter Saturation Voltage

(4)  

Base-Emitter Saturation Voltage

(4)  

V

V

V

1.0  

V

CE

= 10 V, I

C

= 10 mA,  

f = 100 MHz  

f

T  

Current Gain Bandwidth Product  

Output Capacitance  

100  

300  

6.0  

MHz  

pF  

V

CB

= 10 V, I

E

= 0,  

f = 1.0 MHz  

C

obo  

Note:  

4. Pulse test: pulse width

≤

300

μ

s, duty cycle

≤

2.0%.  

www

.onsemi.com  

2

Typical Performance Characteristics  

Ta=125

0

C  

I

C

=10I

B  

Ta=25

0

C  

10  

100  

Ta=25

0

C  

Ta=-40

0

C  

10  

1

1

Ta=125

0

C  

Ta=25

0

C  

Ta=-40

0

C  

0.1  

0.1  

1E-4  

1E-3  

0.01  

0.1  

1

1E-3  

0.01  

0.1  

I

C

[A], COLLECTOR CURRENT  

I

C

[A], COLLECTOR CURRENT  

Figure 3. DC Current Gain  

Figure 4. Collector-Emitter Saturation Voltage  

10  

0.50  

V

CE

=5V  

Ta=25

0

C  

0.45  

0.40  

I

C

=10I

B  

Ta=25

0

C  

0.35  

0.30  

0.25  

Ta=25

0

C  

Ta=-40

0

C  

1

Ta=25

0

C  

0.20  

Ta=125

0

C  

0.15  

Ta=125

0

C  

0.10  

Ta=-40

0

C  

0.05  

0.00  

0.1  

1E-3  

0.01  

0.1  

1

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

1.4  

I

C

[A], COLLECTOR CURRENT  

V

BE

[V], BASE-EMITTER VOLTAGE  

Figure 5. Base-Emitter Saturation Voltage  

Figure 6. Base-Emitter On Voltage  

www

.onsemi.com  

3

Physical Dimensions  

SYMM  

C

L

0.20  

A

2.00  

0.65  

0.50 MIN  

6

4

3

B

PIN ONE  

0.10  

1.25  

1.90  

1

0.30  

0.15  

(0.25)  

0.40 MIN  

0.10  

A B  

1.30  

0.65  

1.30  

LAND PATTERN RECOMMENDATION  

SEE DETAIL A  

1.00  

0.80  

1.10  

0.80  

0.10 C  

0.10  

0.00  

C

2.10 0.30  

SEATING  

PLANE  

NOTES: UNLESS OTHERWISE SPECIFIED  

GAGE  

A) THIS

 

PACKAGE CONFORMS TO EIAJ  

SC-88, 1996.  

PLANE  

(R0.10)  

B) ALL

 

DIMENSIONS ARE IN MILLIMETERS.  

C) DIMENSIONS

 

DO NOT INCLUDE BURRS  

OR MOLD FLASH.  

0.25  

0.10  

D) DRAWING

 

FILENAME: MKT-MAA06AREV6  

0.20  

30°  

0°  

0.46  

0.26  

SCALE: 60X  

Figure 7. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE  

www

.onsemi.com  

4

ON Semiconductor and  

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  

coverage may be accessed at

. ON Semiconductor reserves the right to make changes without further notice to any products herein.  

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  

literature is subject to all applicable copyright laws and is not for resale in any manner.  

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